SE325081B - - Google Patents
Info
- Publication number
- SE325081B SE325081B SE12332/65A SE1233265A SE325081B SE 325081 B SE325081 B SE 325081B SE 12332/65 A SE12332/65 A SE 12332/65A SE 1233265 A SE1233265 A SE 1233265A SE 325081 B SE325081 B SE 325081B
- Authority
- SE
- Sweden
- Prior art keywords
- gaas
- region
- substrate
- transistor
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2907—Materials being Group IIIA-VA materials
- H10P14/2911—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US398540A US3366517A (en) | 1964-09-23 | 1964-09-23 | Formation of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE325081B true SE325081B (https=) | 1970-06-22 |
Family
ID=23575772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE12332/65A SE325081B (https=) | 1964-09-23 | 1965-09-23 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3366517A (https=) |
| CH (1) | CH438495A (https=) |
| DE (1) | DE1288198B (https=) |
| GB (1) | GB1045108A (https=) |
| NL (1) | NL6512036A (https=) |
| SE (1) | SE325081B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
| US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
| US2974262A (en) * | 1957-06-11 | 1961-03-07 | Abraham George | Solid state device and method of making same |
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US3132057A (en) * | 1959-01-29 | 1964-05-05 | Raytheon Co | Graded energy gap semiconductive device |
| US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
| US3095324A (en) * | 1960-04-14 | 1963-06-25 | Gen Electric | Method for making electrically conducting films and article |
| NL268758A (https=) * | 1960-09-20 | |||
| US3234057A (en) * | 1961-06-23 | 1966-02-08 | Ibm | Semiconductor heterojunction device |
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
-
1964
- 1964-09-23 US US398540A patent/US3366517A/en not_active Expired - Lifetime
-
1965
- 1965-08-24 GB GB36418/65A patent/GB1045108A/en not_active Expired
- 1965-09-16 NL NL6512036A patent/NL6512036A/xx unknown
- 1965-09-21 DE DEI29029A patent/DE1288198B/de active Pending
- 1965-09-22 CH CH1311965A patent/CH438495A/de unknown
- 1965-09-23 SE SE12332/65A patent/SE325081B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1288198B (de) | 1969-01-30 |
| NL6512036A (https=) | 1966-03-24 |
| US3366517A (en) | 1968-01-30 |
| CH438495A (de) | 1967-06-30 |
| GB1045108A (en) | 1966-10-05 |
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