SE324810B - - Google Patents
Info
- Publication number
- SE324810B SE324810B SE8718/66A SE871866A SE324810B SE 324810 B SE324810 B SE 324810B SE 8718/66 A SE8718/66 A SE 8718/66A SE 871866 A SE871866 A SE 871866A SE 324810 B SE324810 B SE 324810B
- Authority
- SE
- Sweden
- Prior art keywords
- crystal
- electrode
- stylus
- diaphragm
- pressure
- Prior art date
Links
- 239000013078 crystal Substances 0.000 abstract 7
- 230000004888 barrier function Effects 0.000 abstract 3
- 241001422033 Thestylus Species 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 230000035939 shock Effects 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
1,152,835. Semi - conductor transducers. WESTERN ELECTRIC CO. Inc. 23 June, 1966 [28 June, 1965], No. 28136/66. Heading H4J. [Also in Division H1] An electromechanical transducer comprises a semi-conductor crystal 10 having a dielectric constant at the device operating temperature in the range 100-1000, provided with electrodes 11, 12, and containing a rectifying barrier between one electrode 11 and the body 10. Pressure transmission means, e.g. a stylus 13 pressing on the electrode 11, are provided to apply pressure changes to the crystal and thereby to vary the impedance across the rectifying barrier, or to receive pressure changes from the crystal. The preferred form comprises a ferro-electric crystal 10 of the perovskite class, e.g. KTaO 3 or KTa x Nb 1-x O 3 , having a rectifying gold or platinum electrode 11 vacuum deposited on a freshly cleaned surface thereof, and an ohmic electrode 12 provided by vapour deposition of, e.g. chromium, aluminium or titanium. A gold film overlay may be formed on the electrode 12. Preferred crystal conductivity and dimensions and electrode thickness are given. Such a device may be included in the microphone of a telephone receiver, in which case the stylus is connected to a pressure-sensitive diaphragm. The crystal may either be mounted on a second diaphragm within the microphone to minimize the risk of damage by shock, or may be mounted on a metal cantilever support (21), Fig. 2 (not shown), insulated from the casing (23) by a block (22). A screw (26) urges the support (21) upwardly to provide a preset pressure bias between the stylus (25) and the crystal. The device may alternatively operate within a loud-speaker, variations of voltage across the rectifying barrier leading to pressure changes which may be transmitted to a diaphragm through a stylus.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46721165A | 1965-06-28 | 1965-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE324810B true SE324810B (en) | 1970-06-15 |
Family
ID=23854828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8718/66A SE324810B (en) | 1965-06-28 | 1966-06-27 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3443041A (en) |
| BE (1) | BE682401A (en) |
| DE (1) | DE1573948A1 (en) |
| GB (1) | GB1152835A (en) |
| NL (1) | NL6608825A (en) |
| SE (1) | SE324810B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1250020A (en) * | 1967-12-27 | 1971-10-20 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| GB1265017A (en) * | 1968-08-19 | 1972-03-01 | ||
| GB1265018A (en) * | 1968-08-27 | 1972-03-01 | ||
| US3786320A (en) * | 1968-10-04 | 1974-01-15 | Matsushita Electronics Corp | Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction |
| NL6816449A (en) * | 1968-11-19 | 1970-05-21 | ||
| GB1267388A (en) * | 1968-12-04 | 1972-03-15 | Matsushita Electric Ind Co Ltd | Improvements in and relating to a semiconductor mechano-electrical transducer |
| US3594516A (en) * | 1968-12-18 | 1971-07-20 | Gte Automatic Electric Lab Inc | Semiconductor microphone with cantilever-mounted semiconductor |
| JPS497635B1 (en) * | 1968-12-27 | 1974-02-21 | ||
| GB2211659B (en) * | 1987-10-24 | 1991-01-09 | Stc Plc | Pressure sensor |
| US5232243A (en) * | 1991-04-09 | 1993-08-03 | Trw Vehicle Safety Systems Inc. | Occupant sensing apparatus |
| CN102790936B (en) * | 2011-05-18 | 2015-01-14 | 吴琪君 | Hysteresis-free electrodynamic transducer with motional impedance rectifying return circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2632062A (en) * | 1949-06-15 | 1953-03-17 | Bell Telephone Labor Inc | Semiconductor transducer |
| US3107277A (en) * | 1960-07-05 | 1963-10-15 | Rca Corp | Electrical devices |
| US3215787A (en) * | 1961-06-15 | 1965-11-02 | Gen Telephone & Elect | Tunnel effect transducer amplifier |
| US3182492A (en) * | 1962-10-04 | 1965-05-11 | Bell Telephone Labor Inc | Stabilized tunnel diode stress sensing devices |
-
1965
- 1965-06-28 US US467211A patent/US3443041A/en not_active Expired - Lifetime
-
1966
- 1966-06-10 BE BE682401D patent/BE682401A/xx unknown
- 1966-06-23 GB GB28136/66A patent/GB1152835A/en not_active Expired
- 1966-06-24 NL NL6608825A patent/NL6608825A/xx unknown
- 1966-06-27 SE SE8718/66A patent/SE324810B/xx unknown
- 1966-06-28 DE DE19661573948 patent/DE1573948A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3443041A (en) | 1969-05-06 |
| BE682401A (en) | 1966-11-14 |
| GB1152835A (en) | 1969-05-21 |
| NL6608825A (en) | 1966-12-29 |
| DE1573948A1 (en) | 1970-12-17 |
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