SE323452B - - Google Patents

Info

Publication number
SE323452B
SE323452B SE5947/64A SE594764A SE323452B SE 323452 B SE323452 B SE 323452B SE 5947/64 A SE5947/64 A SE 5947/64A SE 594764 A SE594764 A SE 594764A SE 323452 B SE323452 B SE 323452B
Authority
SE
Sweden
Application number
SE5947/64A
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE5947/64A priority Critical patent/SE323452B/xx
Priority to GB20219/65A priority patent/GB1096777A/en
Priority to DEA49213A priority patent/DE1279203B/de
Priority to US455891A priority patent/US3470036A/en
Publication of SE323452B publication Critical patent/SE323452B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
SE5947/64A 1964-05-15 1964-05-15 SE323452B (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE5947/64A SE323452B (fr) 1964-05-15 1964-05-15
GB20219/65A GB1096777A (en) 1964-05-15 1965-05-13 Improvements in rectifying semi-conductor bodies
DEA49213A DE1279203B (de) 1964-05-15 1965-05-14 Halbleiterkoerper fuer einen Thyristor
US455891A US3470036A (en) 1964-05-15 1965-05-14 Rectifying semi-conductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE5947/64A SE323452B (fr) 1964-05-15 1964-05-15

Publications (1)

Publication Number Publication Date
SE323452B true SE323452B (fr) 1970-05-04

Family

ID=20267586

Family Applications (1)

Application Number Title Priority Date Filing Date
SE5947/64A SE323452B (fr) 1964-05-15 1964-05-15

Country Status (4)

Country Link
US (1) US3470036A (fr)
DE (1) DE1279203B (fr)
GB (1) GB1096777A (fr)
SE (1) SE323452B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593196A (en) * 1969-02-19 1971-07-13 Omni Spectra Inc Type of avalanche diode
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
DE7328984U (de) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie Leistungshalbleiterbauelement
JPS5128777A (en) * 1974-09-04 1976-03-11 Hitachi Ltd Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
DE2805055C2 (de) * 1978-02-07 1983-06-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optisch zündbarer Thyristor
DE3832208A1 (de) * 1988-09-22 1990-03-29 Asea Brown Boveri Steuerbares leistungshalbleiterbauelement
DE102008049678B4 (de) * 2008-09-30 2020-06-10 Infineon Technologies Bipolar Gmbh & Co. Kg Asymmetrisch sperrender Thyristor und Verfahren zur Herstellung eines asymmetrisch sperrenden Thyristors
CN110521000A (zh) * 2017-04-24 2019-11-29 力特半导体（无锡）有限公司 改进的场阻止晶闸管结构及其制造方法
CN111640780B (zh) * 2020-04-13 2022-09-13 浙江明德微电子股份有限公司 一种半导体芯片、制备方法及应用电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104071B (de) * 1959-04-04 1961-04-06 Siemens Ag Vierschichten-Halbleiteranordnung mit einkristallinem Halbleiterkoerper und drei hintereinandergeschalteten pn-UEbergaengen mit abwechselnd entgegengesetzter Sperrichtung und Verfahren zu ihrer Herstellung
FR1263548A (fr) * 1959-07-14 1961-06-09 Ericsson Telefon Ab L M Dispositif semi-conducteur du type pnpn et son procédé de fabrication
US2983854A (en) * 1960-04-05 1961-05-09 Bell Telephone Labor Inc Semiconductive device
US3200259A (en) * 1961-08-01 1965-08-10 Rca Corp Solid state electrical devices utilizing phonon propagation
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device

Also Published As

Publication number Publication date
US3470036A (en) 1969-09-30
GB1096777A (en) 1967-12-29
DE1279203B (de) 1968-10-03

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