SE323427B - - Google Patents
Info
- Publication number
- SE323427B SE323427B SE17870/66A SE1787066A SE323427B SE 323427 B SE323427 B SE 323427B SE 17870/66 A SE17870/66 A SE 17870/66A SE 1787066 A SE1787066 A SE 1787066A SE 323427 B SE323427 B SE 323427B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51770165A | 1965-12-30 | 1965-12-30 | |
US517554A US3275996A (en) | 1965-12-30 | 1965-12-30 | Driver-sense circuit arrangement |
Publications (1)
Publication Number | Publication Date |
---|---|
SE323427B true SE323427B (da) | 1970-05-04 |
Family
ID=27059175
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9737/69A SE341735B (da) | 1965-12-30 | 1966-12-29 | |
SE17870/66A SE323427B (da) | 1965-12-30 | 1966-12-29 | |
SE17869/66A SE334502B (da) | 1965-12-30 | 1966-12-29 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9737/69A SE341735B (da) | 1965-12-30 | 1966-12-29 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE17869/66A SE334502B (da) | 1965-12-30 | 1966-12-29 |
Country Status (4)
Country | Link |
---|---|
US (2) | US3275996A (da) |
FR (2) | FR1508422A (da) |
GB (2) | GB1163789A (da) |
SE (3) | SE341735B (da) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3510849A (en) * | 1965-08-09 | 1970-05-05 | Nippon Electric Co | Memory devices of the semiconductor type having high-speed readout means |
US3414740A (en) * | 1965-09-08 | 1968-12-03 | Ibm | Integrated insulated gate field effect logic circuitry |
US3493932A (en) * | 1966-01-17 | 1970-02-03 | Ibm | Integrated switching matrix comprising field-effect devices |
US3539839A (en) * | 1966-01-31 | 1970-11-10 | Nippon Electric Co | Semiconductor memory device |
US3483400A (en) * | 1966-06-15 | 1969-12-09 | Sharp Kk | Flip-flop circuit |
US3460094A (en) * | 1967-01-16 | 1969-08-05 | Rca Corp | Integrated memory system |
US3521242A (en) * | 1967-05-02 | 1970-07-21 | Rca Corp | Complementary transistor write and ndro for memory cell |
US3538348A (en) * | 1967-07-10 | 1970-11-03 | Motorola Inc | Sense-write circuits for coupling current mode logic circuits to saturating type memory cells |
US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
USRE30744E (en) * | 1967-08-22 | 1981-09-15 | Bunker Ramo Corporation | Digital memory apparatus |
US3533087A (en) * | 1967-09-15 | 1970-10-06 | Rca Corp | Memory employing transistor storage cells |
US3564299A (en) * | 1969-01-16 | 1971-02-16 | Gen Instrument Corp | Clock generator |
US3582975A (en) * | 1969-04-17 | 1971-06-01 | Bell Telephone Labor Inc | Gateable coupling circuit |
BE759081A (nl) * | 1969-11-24 | 1971-05-18 | Shell Int Research | Transistoromkeerschakeling |
JPS5126015B1 (da) * | 1969-12-19 | 1976-08-04 | ||
US3657568A (en) * | 1970-01-05 | 1972-04-18 | Hamilton Watch Co | Pulse shaping circuit using complementary mos devices |
US3601629A (en) * | 1970-02-06 | 1971-08-24 | Westinghouse Electric Corp | Bidirectional data line driver circuit for a mosfet memory |
US3659118A (en) * | 1970-03-27 | 1972-04-25 | Rca Corp | Decoder circuit employing switches such as field-effect devices |
US3628070A (en) * | 1970-04-22 | 1971-12-14 | Rca Corp | Voltage reference and voltage level sensing circuit |
US3680061A (en) * | 1970-04-30 | 1972-07-25 | Ncr Co | Integrated circuit bipolar random access memory system with low stand-by power consumption |
US3656118A (en) * | 1970-05-01 | 1972-04-11 | Cogar Corp | Read/write system and circuit for semiconductor memories |
US3676705A (en) * | 1970-05-11 | 1972-07-11 | Rca Corp | Logic circuits employing switches such as field-effect devices |
US3704454A (en) * | 1970-05-18 | 1972-11-28 | Electronic Arrays | Accessing system for and in integrated circuit type memories |
US3685025A (en) * | 1970-06-25 | 1972-08-15 | Richard W Bryant | Sense amplifier/bit driver for semiconductor memories |
US3601637A (en) * | 1970-06-25 | 1971-08-24 | North American Rockwell | Minor clock generator using major clock signals |
US3693170A (en) * | 1970-08-05 | 1972-09-19 | Marconi Co Ltd | Memory cells |
US3646369A (en) * | 1970-08-28 | 1972-02-29 | North American Rockwell | Multiphase field effect transistor dc driver |
US3629612A (en) * | 1970-09-18 | 1971-12-21 | Rca Corp | Operation of field-effect transistor circuit having substantial distributed capacitance |
US3638039A (en) * | 1970-09-18 | 1972-01-25 | Rca Corp | Operation of field-effect transistor circuits having substantial distributed capacitance |
US3702926A (en) * | 1970-09-30 | 1972-11-14 | Ibm | Fet decode circuit |
US3701125A (en) * | 1970-12-31 | 1972-10-24 | Ibm | Self-contained magnetic bubble domain memory chip |
US3676702A (en) * | 1971-01-04 | 1972-07-11 | Rca Corp | Comparator circuit |
US3772658A (en) * | 1971-02-05 | 1973-11-13 | Us Army | Electronic memory having a page swapping capability |
US3765002A (en) * | 1971-04-20 | 1973-10-09 | Siemens Ag | Accelerated bit-line discharge of a mosfet memory |
US3706977A (en) * | 1971-11-11 | 1972-12-19 | Ibm | Functional memory storage cell |
US3838295A (en) * | 1973-02-05 | 1974-09-24 | Lockheed Electronics Co | Ratioless mos sense amplifier |
US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
DE3528525A1 (de) * | 1985-08-08 | 1987-02-19 | Goldwell Gmbh | Doppelkammer-behaelter |
US4719596A (en) * | 1986-03-19 | 1988-01-12 | International Business Machines Corporation | Register providing simultaneous reading and writing to multiple ports |
US4833648A (en) * | 1987-07-02 | 1989-05-23 | Texas Instruments Incorporated | Multiport ram hybrid memory cell with fast write |
DE68921394T2 (de) * | 1988-09-07 | 1995-06-29 | Texas Instruments Inc., Dallas, Tex. | Speicherzelle mit einer Schaltung zur Reduzierung von Unordnungseinzelereignissen. |
US5204990A (en) * | 1988-09-07 | 1993-04-20 | Texas Instruments Incorporated | Memory cell with capacitance for single event upset protection |
US4995001A (en) * | 1988-10-31 | 1991-02-19 | International Business Machines Corporation | Memory cell and read circuit |
US7298180B2 (en) * | 2005-11-17 | 2007-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Latch type sense amplifier |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3067336A (en) * | 1957-05-03 | 1962-12-04 | Honeywell Regulator Co | Bistable electronic switching circuitry for manipulating digital data |
US3173130A (en) * | 1960-08-08 | 1965-03-09 | Bell Telephone Labor Inc | Memory circuit |
US3310686A (en) * | 1963-06-14 | 1967-03-21 | Rca Corp | Flip flip circuits utilizing set-reset dominate techniques |
US3267295A (en) * | 1964-04-13 | 1966-08-16 | Rca Corp | Logic circuits |
-
1965
- 1965-12-30 US US517554A patent/US3275996A/en not_active Expired - Lifetime
- 1965-12-30 US US517701A patent/US3440444A/en not_active Expired - Lifetime
-
1966
- 1966-12-21 GB GB57217/66A patent/GB1163789A/en not_active Expired
- 1966-12-21 GB GB57216/66A patent/GB1163788A/en not_active Expired
- 1966-12-28 FR FR89111A patent/FR1508422A/fr not_active Expired
- 1966-12-29 SE SE9737/69A patent/SE341735B/xx unknown
- 1966-12-29 SE SE17870/66A patent/SE323427B/xx unknown
- 1966-12-29 SE SE17869/66A patent/SE334502B/xx unknown
- 1966-12-30 FR FR89530A patent/FR1507409A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3275996A (en) | 1966-09-27 |
GB1163789A (en) | 1969-09-10 |
DE1499857A1 (de) | 1970-12-23 |
SE341735B (da) | 1972-01-10 |
DE1499856B2 (de) | 1972-06-15 |
GB1163788A (en) | 1969-09-10 |
US3440444A (en) | 1969-04-22 |
SE334502B (da) | 1971-04-26 |
DE1499857B2 (de) | 1972-11-23 |
DE1499856A1 (de) | 1970-02-12 |
FR1507409A (fr) | 1967-12-29 |
FR1508422A (fr) | 1968-01-05 |