SE318628B - - Google Patents

Info

Publication number
SE318628B
SE318628B SE4783/64A SE478364A SE318628B SE 318628 B SE318628 B SE 318628B SE 4783/64 A SE4783/64 A SE 4783/64A SE 478364 A SE478364 A SE 478364A SE 318628 B SE318628 B SE 318628B
Authority
SE
Sweden
Prior art keywords
transistor
signal
gate
april
field effect
Prior art date
Application number
SE4783/64A
Other languages
English (en)
Inventor
G Theriault
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE318628B publication Critical patent/SE318628B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Junction Field-Effect Transistors (AREA)
SE4783/64A 1963-04-19 1964-04-17 SE318628B (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US274182A US3260948A (en) 1963-04-19 1963-04-19 Field-effect transistor translating circuit

Publications (1)

Publication Number Publication Date
SE318628B true SE318628B (pt) 1969-12-15

Family

ID=23047135

Family Applications (1)

Application Number Title Priority Date Filing Date
SE4783/64A SE318628B (pt) 1963-04-19 1964-04-17

Country Status (8)

Country Link
US (1) US3260948A (pt)
BE (1) BE646647A (pt)
BR (1) BR6458517D0 (pt)
DE (1) DE1441842B2 (pt)
FR (1) FR1397544A (pt)
GB (1) GB1065415A (pt)
NL (1) NL6404200A (pt)
SE (1) SE318628B (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301882A (pt) * 1962-12-17
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US3406298A (en) * 1965-02-03 1968-10-15 Ibm Integrated igfet logic circuit with linear resistive load
US3441748A (en) * 1965-03-22 1969-04-29 Rca Corp Bidirectional igfet with symmetrical linear resistance with specific substrate voltage control
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier
US3399353A (en) * 1967-06-02 1968-08-27 Rca Corp Fm counter-type detector especially suited for integrated circuit fabrication
US3543175A (en) * 1969-07-24 1970-11-24 Us Navy Variable gain amplifier
US3818245A (en) * 1973-01-05 1974-06-18 Tokyo Shibaura Electric Co Driving circuit for an indicating device using insulated-gate field effect transistors
US4353036A (en) * 1980-08-29 1982-10-05 Rca Corporation Field effect transistor amplifier with variable gain control
JP2004040735A (ja) * 2002-07-08 2004-02-05 Toyota Industries Corp 半導体集積回路及び半導体集積回路の製造方法
GB0609739D0 (en) * 2006-05-17 2006-06-28 Univ Bradford High frequency low noise amplifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3027518A (en) * 1960-03-31 1962-03-27 Beli Telephone Lab Inc Automatic gain control system
US3024423A (en) * 1960-07-01 1962-03-06 Oak Mfg Co Electrical apparatus

Also Published As

Publication number Publication date
DE1441842B2 (de) 1974-10-17
DE1441842A1 (de) 1968-11-14
NL6404200A (pt) 1964-10-20
BR6458517D0 (pt) 1973-09-06
GB1065415A (en) 1967-04-12
BE646647A (pt) 1964-08-17
FR1397544A (fr) 1965-04-30
US3260948A (en) 1966-07-12

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