SE316457B - - Google Patents

Info

Publication number
SE316457B
SE316457B SE5602/62A SE560262A SE316457B SE 316457 B SE316457 B SE 316457B SE 5602/62 A SE5602/62 A SE 5602/62A SE 560262 A SE560262 A SE 560262A SE 316457 B SE316457 B SE 316457B
Authority
SE
Sweden
Application number
SE5602/62A
Inventor
R Wentorf
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE316457B publication Critical patent/SE316457B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C01B21/0641—Preparation by direct nitridation of elemental boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Catalysts (AREA)
  • Ceramic Products (AREA)
SE5602/62A 1961-05-19 1962-05-18 SE316457B (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US111279A US3141802A (en) 1961-05-19 1961-05-19 Semiconducting cubic boron nitride and methods for preparing the same

Publications (1)

Publication Number Publication Date
SE316457B true SE316457B (en:Method) 1969-10-27

Family

ID=22337574

Family Applications (1)

Application Number Title Priority Date Filing Date
SE5602/62A SE316457B (en:Method) 1961-05-19 1962-05-18

Country Status (6)

Country Link
US (1) US3141802A (en:Method)
BE (1) BE617778A (en:Method)
DE (1) DE1169902B (en:Method)
GB (1) GB1002084A (en:Method)
NL (2) NL278494A (en:Method)
SE (1) SE316457B (en:Method)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3188537A (en) * 1961-08-31 1965-06-08 Gen Electric Device for asymmetric conduct of current
US3768972A (en) * 1971-05-10 1973-10-30 Westinghouse Electric Corp Method of producing cubic boron nitride with aluminum containing catalyst
CH562756A5 (en:Method) * 1972-05-31 1975-06-13 Vnii Abrazivov I Shlifovania V
JPS5239400B2 (en:Method) * 1973-03-26 1977-10-05
US4980730A (en) * 1987-05-01 1990-12-25 National Institute For Research In Organic Materials Light emitting element of cubic boron nitride
JPH01224039A (ja) * 1988-03-03 1989-09-07 Sumitomo Electric Ind Ltd 立方晶窒化硼素p−n接合体の作製方法
KR101200722B1 (ko) * 2003-11-18 2012-11-13 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 원자외 고휘도 발광하는 육방정 질화붕소 단결정과 그 제조방법 및 상기 단결정으로 이루어지는 원자외 고휘도 발광소자와 이 소자를 사용한 고체 레이저, 및 고체 발광장치
JP4925463B2 (ja) * 2005-02-16 2012-04-25 日本碍子株式会社 六方晶窒化ホウ素単結晶の製造方法
RU2394757C2 (ru) * 2008-04-21 2010-07-20 Государственное научно-производственное объединение "Научно-практический центр Национальной академии наук по материаловедению" Способ получения кубического нитрида бора, обладающего световой эмиссией

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL178978B (nl) * 1952-06-19 Texaco Ag Werkwijze voor het bereiden van een smeervet op basis van lithiumzeep.
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
US2947617A (en) * 1958-01-06 1960-08-02 Gen Electric Abrasive material and preparation thereof
GB860499A (en) * 1958-01-27 1961-02-08 Gen Electric Methods of making cubic boron nitride

Also Published As

Publication number Publication date
NL134888C (en:Method)
DE1169902B (de) 1964-05-14
GB1002084A (en) 1965-08-25
NL278494A (en:Method)
BE617778A (fr) 1962-09-17
US3141802A (en) 1964-07-21

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