SE315661B - - Google Patents

Info

Publication number
SE315661B
SE315661B SE6500/66A SE650066A SE315661B SE 315661 B SE315661 B SE 315661B SE 6500/66 A SE6500/66 A SE 6500/66A SE 650066 A SE650066 A SE 650066A SE 315661 B SE315661 B SE 315661B
Authority
SE
Sweden
Application number
SE6500/66A
Inventor
R Wiesner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE315661B publication Critical patent/SE315661B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
SE6500/66A 1965-05-11 1966-05-11 SE315661B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097037 1965-05-11

Publications (1)

Publication Number Publication Date
SE315661B true SE315661B (OSRAM) 1969-10-06

Family

ID=7520460

Family Applications (1)

Application Number Title Priority Date Filing Date
SE6500/66A SE315661B (OSRAM) 1965-05-11 1966-05-11

Country Status (7)

Country Link
US (1) US3466741A (OSRAM)
AT (1) AT262381B (OSRAM)
CH (1) CH455052A (OSRAM)
DE (1) DE1514460A1 (OSRAM)
GB (1) GB1142816A (OSRAM)
NL (1) NL6606453A (OSRAM)
SE (1) SE315661B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6714336A (OSRAM) * 1967-10-21 1969-04-23
US3947952A (en) * 1970-12-28 1976-04-06 Bell Telephone Laboratories, Incorporated Method of encapsulating beam lead semiconductor devices
US3660732A (en) * 1971-02-08 1972-05-02 Signetics Corp Semiconductor structure with dielectric and air isolation and method
US4587719A (en) * 1983-08-01 1986-05-13 The Board Of Trustees Of The Leland Stanford Junior University Method of fabrication of long arrays using a short substrate
US4815208A (en) * 1987-05-22 1989-03-28 Texas Instruments Incorporated Method of joining substrates for planar electrical interconnections of hybrid circuits
US5874346A (en) * 1996-05-23 1999-02-23 Advanced Micro Devices, Inc. Subtrench conductor formation with large tilt angle implant
US6182342B1 (en) 1999-04-02 2001-02-06 Andersen Laboratories, Inc. Method of encapsulating a saw device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3079254A (en) * 1959-01-26 1963-02-26 George W Crowley Photographic fabrication of semiconductor devices
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
US3206647A (en) * 1960-10-31 1965-09-14 Sprague Electric Co Semiconductor unit
DE1188731B (de) * 1961-03-17 1965-03-11 Intermetall Verfahren zum gleichzeitigen Herstellen von mehreren Halbleiteranordnungen
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3307239A (en) * 1964-02-18 1967-03-07 Bell Telephone Labor Inc Method of making integrated semiconductor devices

Also Published As

Publication number Publication date
AT262381B (de) 1968-06-10
CH455052A (de) 1968-04-30
NL6606453A (OSRAM) 1966-11-14
GB1142816A (en) 1969-02-12
DE1514460A1 (de) 1969-05-22
US3466741A (en) 1969-09-16

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