SE311700B - - Google Patents
Info
- Publication number
- SE311700B SE311700B SE13590/64A SE1359064A SE311700B SE 311700 B SE311700 B SE 311700B SE 13590/64 A SE13590/64 A SE 13590/64A SE 1359064 A SE1359064 A SE 1359064A SE 311700 B SE311700 B SE 311700B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US322965A US3382454A (en) | 1963-11-12 | 1963-11-12 | Low loss injection laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE311700B true SE311700B (xx) | 1969-06-23 |
Family
ID=23257221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE13590/64A SE311700B (xx) | 1963-11-12 | 1964-11-11 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3382454A (xx) |
| DE (1) | DE1489253B2 (xx) |
| NL (2) | NL6410527A (xx) |
| SE (1) | SE311700B (xx) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3657735A (en) * | 1970-03-20 | 1972-04-18 | Rca Corp | Electron beam excited laser |
| DE3043581A1 (de) * | 1980-11-19 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung |
| FR2525406A1 (fr) * | 1982-04-20 | 1983-10-21 | Kornitsky Usherovich | Tube cathodique a laser et procede pour son traitement thermique sous vide |
| US4894832A (en) * | 1988-09-15 | 1990-01-16 | North American Philips Corporation | Wide band gap semiconductor light emitting devices |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3204159A (en) * | 1960-09-14 | 1965-08-31 | Bramley Jenny | Rectifying majority carrier device |
-
0
- NL NL134669D patent/NL134669C/xx active
-
1963
- 1963-11-12 US US322965A patent/US3382454A/en not_active Expired - Lifetime
-
1964
- 1964-09-10 NL NL6410527A patent/NL6410527A/xx unknown
- 1964-11-10 DE DE19641489253 patent/DE1489253B2/de active Pending
- 1964-11-11 SE SE13590/64A patent/SE311700B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3382454A (en) | 1968-05-07 |
| DE1489253B2 (de) | 1969-10-30 |
| NL6410527A (xx) | 1965-05-13 |
| NL134669C (xx) | |
| DE1489253A1 (de) | 1969-04-03 |