NL134669C - - Google Patents

Info

Publication number
NL134669C
NL134669C NL134669DC NL134669C NL 134669 C NL134669 C NL 134669C NL 134669D C NL134669D C NL 134669DC NL 134669 C NL134669 C NL 134669C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL134669C publication Critical patent/NL134669C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL134669D 1963-11-12 NL134669C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US322965A US3382454A (en) 1963-11-12 1963-11-12 Low loss injection laser

Publications (1)

Publication Number Publication Date
NL134669C true NL134669C (xx)

Family

ID=23257221

Family Applications (2)

Application Number Title Priority Date Filing Date
NL134669D NL134669C (xx) 1963-11-12
NL6410527A NL6410527A (xx) 1963-11-12 1964-09-10

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL6410527A NL6410527A (xx) 1963-11-12 1964-09-10

Country Status (4)

Country Link
US (1) US3382454A (xx)
DE (1) DE1489253B2 (xx)
NL (2) NL6410527A (xx)
SE (1) SE311700B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657735A (en) * 1970-03-20 1972-04-18 Rca Corp Electron beam excited laser
DE3043581A1 (de) * 1980-11-19 1982-06-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
FR2525406A1 (fr) * 1982-04-20 1983-10-21 Kornitsky Usherovich Tube cathodique a laser et procede pour son traitement thermique sous vide
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3204159A (en) * 1960-09-14 1965-08-31 Bramley Jenny Rectifying majority carrier device

Also Published As

Publication number Publication date
NL6410527A (xx) 1965-05-13
US3382454A (en) 1968-05-07
DE1489253A1 (de) 1969-04-03
DE1489253B2 (de) 1969-10-30
SE311700B (xx) 1969-06-23

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