SE300472B - - Google Patents
Info
- Publication number
- SE300472B SE300472B SE4119/65A SE411965A SE300472B SE 300472 B SE300472 B SE 300472B SE 4119/65 A SE4119/65 A SE 4119/65A SE 411965 A SE411965 A SE 411965A SE 300472 B SE300472 B SE 300472B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE300472B true SE300472B (es) | 1968-04-29 |
Family
ID=20263573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE4119/65A SE300472B (es) | 1965-03-31 | 1965-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| SE (1) | SE300472B (es) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2130457A1 (de) * | 1970-07-31 | 1972-02-03 | Fairchild Camera Instr Co | Halbleiterbauelement |
| US3946418A (en) * | 1972-11-01 | 1976-03-23 | General Electric Company | Resistive gate field effect transistor |
| US4009483A (en) * | 1974-04-04 | 1977-02-22 | Motorola, Inc. | Implementation of surface sensitive semiconductor devices |
| US4012762A (en) * | 1974-06-24 | 1977-03-15 | Sony Corporation | Semiconductor field effect device having oxygen enriched polycrystalline silicon |
| US4014037A (en) * | 1974-03-30 | 1977-03-22 | Sony Corporation | Semiconductor device |
| US4062033A (en) * | 1975-04-25 | 1977-12-06 | Sony Corporation | Schottky barrier type semiconductor device |
| US4062707A (en) * | 1975-02-15 | 1977-12-13 | Sony Corporation | Utilizing multiple polycrystalline silicon masks for diffusion and passivation |
| US4080619A (en) * | 1975-04-30 | 1978-03-21 | Sony Corporation | Bipolar type semiconductor device |
| US4157563A (en) * | 1971-07-02 | 1979-06-05 | U.S. Philips Corporation | Semiconductor device |
| US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
| US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
| US4297149A (en) * | 1980-05-05 | 1981-10-27 | Rca Corporation | Method of treating SiPOS passivated high voltage semiconductor device |
| US4322452A (en) * | 1977-07-05 | 1982-03-30 | Siemens Aktiengesellschaft | Process for passivating semiconductor members |
| US4649414A (en) * | 1981-09-14 | 1987-03-10 | Oki Electric Industry Co., Ltd. | PNPN semiconductor switches |
| US4757362A (en) * | 1980-05-30 | 1988-07-12 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4766474A (en) * | 1980-05-30 | 1988-08-23 | Sharp Kabushiki Kiasha | High voltage MOS transistor |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
-
1965
- 1965-03-31 SE SE4119/65A patent/SE300472B/xx unknown
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2130457A1 (de) * | 1970-07-31 | 1972-02-03 | Fairchild Camera Instr Co | Halbleiterbauelement |
| US4157563A (en) * | 1971-07-02 | 1979-06-05 | U.S. Philips Corporation | Semiconductor device |
| US3946418A (en) * | 1972-11-01 | 1976-03-23 | General Electric Company | Resistive gate field effect transistor |
| US4014037A (en) * | 1974-03-30 | 1977-03-22 | Sony Corporation | Semiconductor device |
| US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
| US4009483A (en) * | 1974-04-04 | 1977-02-22 | Motorola, Inc. | Implementation of surface sensitive semiconductor devices |
| US4012762A (en) * | 1974-06-24 | 1977-03-15 | Sony Corporation | Semiconductor field effect device having oxygen enriched polycrystalline silicon |
| US4062707A (en) * | 1975-02-15 | 1977-12-13 | Sony Corporation | Utilizing multiple polycrystalline silicon masks for diffusion and passivation |
| US4062033A (en) * | 1975-04-25 | 1977-12-06 | Sony Corporation | Schottky barrier type semiconductor device |
| US4080619A (en) * | 1975-04-30 | 1978-03-21 | Sony Corporation | Bipolar type semiconductor device |
| US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
| US4322452A (en) * | 1977-07-05 | 1982-03-30 | Siemens Aktiengesellschaft | Process for passivating semiconductor members |
| US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4297149A (en) * | 1980-05-05 | 1981-10-27 | Rca Corporation | Method of treating SiPOS passivated high voltage semiconductor device |
| US4757362A (en) * | 1980-05-30 | 1988-07-12 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
| US4766474A (en) * | 1980-05-30 | 1988-08-23 | Sharp Kabushiki Kiasha | High voltage MOS transistor |
| US4649414A (en) * | 1981-09-14 | 1987-03-10 | Oki Electric Industry Co., Ltd. | PNPN semiconductor switches |