SE300472B - - Google Patents

Info

Publication number
SE300472B
SE300472B SE4119/65A SE411965A SE300472B SE 300472 B SE300472 B SE 300472B SE 4119/65 A SE4119/65 A SE 4119/65A SE 411965 A SE411965 A SE 411965A SE 300472 B SE300472 B SE 300472B
Authority
SE
Sweden
Application number
SE4119/65A
Inventor
B Vedin
O Edqvist
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE4119/65A priority Critical patent/SE300472B/xx
Publication of SE300472B publication Critical patent/SE300472B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
SE4119/65A 1965-03-31 1965-03-31 SE300472B (xx)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE4119/65A SE300472B (xx) 1965-03-31 1965-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE4119/65A SE300472B (xx) 1965-03-31 1965-03-31

Publications (1)

Publication Number Publication Date
SE300472B true SE300472B (xx) 1968-04-29

Family

ID=20263573

Family Applications (1)

Application Number Title Priority Date Filing Date
SE4119/65A SE300472B (xx) 1965-03-31 1965-03-31

Country Status (1)

Country Link
SE (1) SE300472B (xx)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130457A1 (de) * 1970-07-31 1972-02-03 Fairchild Camera Instr Co Halbleiterbauelement
US3946418A (en) * 1972-11-01 1976-03-23 General Electric Company Resistive gate field effect transistor
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
US4012762A (en) * 1974-06-24 1977-03-15 Sony Corporation Semiconductor field effect device having oxygen enriched polycrystalline silicon
US4014037A (en) * 1974-03-30 1977-03-22 Sony Corporation Semiconductor device
US4062033A (en) * 1975-04-25 1977-12-06 Sony Corporation Schottky barrier type semiconductor device
US4062707A (en) * 1975-02-15 1977-12-13 Sony Corporation Utilizing multiple polycrystalline silicon masks for diffusion and passivation
US4080619A (en) * 1975-04-30 1978-03-21 Sony Corporation Bipolar type semiconductor device
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4322452A (en) * 1977-07-05 1982-03-30 Siemens Aktiengesellschaft Process for passivating semiconductor members
US4649414A (en) * 1981-09-14 1987-03-10 Oki Electric Industry Co., Ltd. PNPN semiconductor switches
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130457A1 (de) * 1970-07-31 1972-02-03 Fairchild Camera Instr Co Halbleiterbauelement
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3946418A (en) * 1972-11-01 1976-03-23 General Electric Company Resistive gate field effect transistor
US4014037A (en) * 1974-03-30 1977-03-22 Sony Corporation Semiconductor device
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
US4012762A (en) * 1974-06-24 1977-03-15 Sony Corporation Semiconductor field effect device having oxygen enriched polycrystalline silicon
US4062707A (en) * 1975-02-15 1977-12-13 Sony Corporation Utilizing multiple polycrystalline silicon masks for diffusion and passivation
US4062033A (en) * 1975-04-25 1977-12-06 Sony Corporation Schottky barrier type semiconductor device
US4080619A (en) * 1975-04-30 1978-03-21 Sony Corporation Bipolar type semiconductor device
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4322452A (en) * 1977-07-05 1982-03-30 Siemens Aktiengesellschaft Process for passivating semiconductor members
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4649414A (en) * 1981-09-14 1987-03-10 Oki Electric Industry Co., Ltd. PNPN semiconductor switches

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