SE179759C1 - - Google Patents
Info
- Publication number
- SE179759C1 SE179759C1 SE179759DA SE179759C1 SE 179759 C1 SE179759 C1 SE 179759C1 SE 179759D A SE179759D A SE 179759DA SE 179759 C1 SE179759 C1 SE 179759C1
- Authority
- SE
- Sweden
- Prior art keywords
- water
- layer system
- semiconductor
- water supply
- transistor
- Prior art date
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000004888 barrier function Effects 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000001179 sorption measurement Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229920001558 organosilicon polymer Polymers 0.000 claims description 2
- 239000011324 bead Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 26
- 238000003199 nucleic acid amplification method Methods 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000004519 grease Substances 0.000 description 15
- 230000008018 melting Effects 0.000 description 15
- 238000002844 melting Methods 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 238000002474 experimental method Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011491 glass wool Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 241000220317 Rosa Species 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- TXGQALXWGNPMKD-UHFFFAOYSA-L diazanium;zinc;disulfate;hexahydrate Chemical compound [NH4+].[NH4+].O.O.O.O.O.O.[Zn+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O TXGQALXWGNPMKD-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CVGYQRALNWEBMP-UHFFFAOYSA-M O.S(=O)(=O)([O-])[O-].[Zn+].[NH4+] Chemical compound O.S(=O)(=O)([O-])[O-].[Zn+].[NH4+] CVGYQRALNWEBMP-UHFFFAOYSA-M 0.000 description 1
- XOMDKRCFSBGDAM-UHFFFAOYSA-L O.[K+].S(=O)(=O)([O-])[O-].[Ni+2] Chemical compound O.[K+].S(=O)(=O)([O-])[O-].[Ni+2] XOMDKRCFSBGDAM-UHFFFAOYSA-L 0.000 description 1
- 241000920340 Pion Species 0.000 description 1
- PSIOOHPZLJTGJH-UHFFFAOYSA-M S(=O)(=O)([O-])[O-].[NH4+].[Zn+] Chemical compound S(=O)(=O)([O-])[O-].[NH4+].[Zn+] PSIOOHPZLJTGJH-UHFFFAOYSA-M 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- DAPUDVOJPZKTSI-UHFFFAOYSA-L ammonium nickel sulfate Chemical compound [NH4+].[NH4+].[Ni+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DAPUDVOJPZKTSI-UHFFFAOYSA-L 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AXWUBPRBCMSFDY-UHFFFAOYSA-M dimagnesium oxygen(2-) hydroxide Chemical compound [O-2].[Mg+2].[OH-].[Mg+2] AXWUBPRBCMSFDY-UHFFFAOYSA-M 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- JIPRFNBGGBDGIY-UHFFFAOYSA-L potassium;cobalt(2+);sulfate Chemical compound [K+].[Co+2].[O-]S([O-])(=O)=O JIPRFNBGGBDGIY-UHFFFAOYSA-L 0.000 description 1
- JUOMHRRRIKTLFH-UHFFFAOYSA-L potassium;nickel(2+);sulfate Chemical compound [K+].[Ni+2].[O-]S([O-])(=O)=O JUOMHRRRIKTLFH-UHFFFAOYSA-L 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE179759T |
Publications (1)
Publication Number | Publication Date |
---|---|
SE179759C1 true SE179759C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1962-01-01 |
Family
ID=41968228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE179759D SE179759C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Country Status (1)
Country | Link |
---|---|
SE (1) | SE179759C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
0
- SE SE179759D patent/SE179759C1/sv unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI472458B (zh) | A rare earth metal or a rare earth metal oxide | |
SE179759C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
Jiang et al. | The role of sodium in stabilizing tin–lead (Sn–Pb) alloyed perovskite quantum dots | |
US2857296A (en) | Methods of forming a junction in a semiconductor | |
CN103361731B (zh) | 一种掺镓晶体硅中金属镓的使用方法 | |
JP3323924B2 (ja) | 静電チャック | |
NO127612B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US2865794A (en) | Semi-conductor device with telluride containing ohmic contact and method of forming the same | |
US11268003B2 (en) | Heat storage device | |
US2998554A (en) | Semi-conductor barrier layer system | |
JP2000070352A (ja) | ゲル状芳香剤 | |
US4430537A (en) | Getter and electrical switching system using such getter | |
CN114094273B (zh) | 一种具备防溢流功能的热电池隔离层及其制备方法 | |
JP2003230840A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US2998557A (en) | Semi-conductor barrier layer systems | |
US2929971A (en) | Semi-conductive device and method of making | |
US3099588A (en) | Formation of semiconductor transition regions by alloy vaporization and deposition | |
US2721108A (en) | Method of manufacture of vaporelectric device | |
US2356345A (en) | Method of storing and concentrating anhydrous hydrogen chloride | |
Bennett et al. | The low-temperature interaction of oxygen with evaporated germanium films | |
JP2943572B2 (ja) | 鉛蓄電池用極板の製造法 | |
RU2439739C1 (ru) | Нанокомпозитная газопоглощающая структура | |
US2888620A (en) | High resistance semiconductor cells | |
US3404030A (en) | Method for impregnating porous battery supports with meltable hydrated salts | |
US2887630A (en) | Transistor |