SE145952C1 - - Google Patents

Info

Publication number
SE145952C1
SE145952C1 SE1035751A SE1035751A SE145952C1 SE 145952 C1 SE145952 C1 SE 145952C1 SE 1035751 A SE1035751 A SE 1035751A SE 1035751 A SE1035751 A SE 1035751A SE 145952 C1 SE145952 C1 SE 145952C1
Authority
SE
Sweden
Application number
SE1035751A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of SE145952C1 publication Critical patent/SE145952C1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/22Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil
    • H01H47/24Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for supplying energising current for relay coil having light-sensitive input
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Hybrid Cells (AREA)
SE1035751A 1951-03-21 1951-12-07 SE145952C1 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US216754A US2641713A (en) 1951-03-21 1951-03-21 Semiconductor photoelectric device

Publications (1)

Publication Number Publication Date
SE145952C1 true SE145952C1 (xx) 1954-06-29

Family

ID=22808376

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1035751A SE145952C1 (xx) 1951-03-21 1951-12-07

Country Status (3)

Country Link
US (1) US2641713A (xx)
DE (1) DE891580C (xx)
SE (1) SE145952C1 (xx)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2740901A (en) * 1951-12-29 1956-04-03 Bell Telephone Labor Inc Differential photocell detector using junction semiconductors
US3094634A (en) * 1953-06-30 1963-06-18 Rca Corp Radioactive batteries
NL187545C (xx) * 1953-08-10
DE1047947B (de) * 1953-11-19 1958-12-31 Siemens Ag Gleichrichtende oder verstaerkende Halbleiteranordnung mit durch ein aeusseres elektrisches und/oder magnetisches Feld veraenderlichem Widerstand
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
DE1129632B (de) * 1954-06-28 1962-05-17 Licentia Gmbh Lichtelektrische Halbleiteranordnung
US2914665A (en) * 1954-11-15 1959-11-24 Rca Corp Semiconductor devices
US2876002A (en) * 1955-08-02 1959-03-03 Frederick A Purdy Control systems
US2958786A (en) * 1955-12-16 1960-11-01 Texas Instruments Inc Transistor transducer
US3028500A (en) * 1956-08-24 1962-04-03 Rca Corp Photoelectric apparatus
US2902276A (en) * 1956-12-13 1959-09-01 Frederick A Purdy Door-operators and controls
US3011089A (en) * 1958-04-16 1961-11-28 Bell Telephone Labor Inc Solid state light sensitive storage device
US3020438A (en) * 1958-07-29 1962-02-06 Westinghouse Electric Corp Electron beam device
US3040262A (en) * 1959-06-22 1962-06-19 Bell Telephone Labor Inc Light sensitive resonant circuit
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
US3222530A (en) * 1961-06-07 1965-12-07 Philco Corp Ultra-sensitive photo-transistor device comprising wafer having high resistivity center region with opposite conductivity, diffused, low-resistivity, and translucent outer layers
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3246161A (en) * 1962-08-06 1966-04-12 Bendix Corp Semi-conductor photopotentiometer
US3332011A (en) * 1963-02-21 1967-07-18 Bell Telephone Labor Inc High-frequency electrical power measuring bridge using radiant energy
US3331022A (en) * 1963-02-21 1967-07-11 Bell Telephone Labor Inc Electrical power measuring bridge using radiant energy
US3450890A (en) * 1966-07-11 1969-06-17 Us Navy Wide-entrance,narrow-exit thin sheet light guide with juxtaposed photosensor
DE1278523B (de) * 1966-09-27 1968-09-26 Standard Elektrik Lorenz Ag Verstaerkeranordnung mit fotoelektrischen Koppelelementen
US3521300A (en) * 1967-08-11 1970-07-21 Alvin Weiss Automatic electric self-synchronizing polarizing windows
US3917943A (en) * 1974-11-21 1975-11-04 Bell Telephone Labor Inc Picosecond semiconductor electronic switch controlled by optical means
EP3375017B1 (en) 2016-10-24 2021-08-11 Indian Institute of Technology, Guwahati A microfluidic electrical energy harvester

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2482980A (en) * 1946-04-06 1949-09-27 Heinz E Kallmann Constant voltage source

Also Published As

Publication number Publication date
US2641713A (en) 1953-06-09
DE891580C (de) 1953-10-29

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