SE0001646D0 - Top contact with monitor - Google Patents

Top contact with monitor

Info

Publication number
SE0001646D0
SE0001646D0 SE0001646A SE0001646A SE0001646D0 SE 0001646 D0 SE0001646 D0 SE 0001646D0 SE 0001646 A SE0001646 A SE 0001646A SE 0001646 A SE0001646 A SE 0001646A SE 0001646 D0 SE0001646 D0 SE 0001646D0
Authority
SE
Sweden
Prior art keywords
vcsel
parasitic capacitance
monitor
monitor chip
results
Prior art date
Application number
SE0001646A
Other languages
Swedish (sv)
Other versions
SE0001646L (en
Inventor
Mikael Wickstroem
Jan Joensson
Vilhelm Oskarsson
Original Assignee
Mitel Semiconductor Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9910202A external-priority patent/GB2349740A/en
Application filed by Mitel Semiconductor Ab filed Critical Mitel Semiconductor Ab
Publication of SE0001646D0 publication Critical patent/SE0001646D0/en
Publication of SE0001646L publication Critical patent/SE0001646L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

A vertical cavity surface emitting laser (VCSEL) and monitoring diode combination having reduced parasitic capacitance for use in high bandwidth communications systems. The VCSEL has both p-type and n-type contacts on the same face. This allows the VCSEL to be mounted on a monitor chip or diode without using a metal contact layer. In an embodiment wherein the VCSEL is soldered to the monitor chip for mechanical stability only a small metal pad no larger than the VCSEL is used. The reduction in metallisation results in a lower parasitic capacitance that in turn results in higher potential operational speeds.
SE0001646A 1999-05-05 2000-05-04 Top-contact switching with monitoring SE0001646L (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9910202A GB2349740A (en) 1999-05-05 1999-05-05 Vertical cavity surface emitting laser with monitoring diode
US09/506,895 US6368890B1 (en) 1999-05-05 2000-02-18 Top contact VCSEL with monitor

Publications (2)

Publication Number Publication Date
SE0001646D0 true SE0001646D0 (en) 2000-05-04
SE0001646L SE0001646L (en) 2000-11-06

Family

ID=26315500

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0001646A SE0001646L (en) 1999-05-05 2000-05-04 Top-contact switching with monitoring

Country Status (7)

Country Link
US (2) US6368890B1 (en)
JP (1) JP2000340877A (en)
CA (1) CA2307779A1 (en)
DE (1) DE10021564A1 (en)
FR (1) FR2793960A1 (en)
GB (1) GB2351180A (en)
SE (1) SE0001646L (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19963605A1 (en) * 1999-12-23 2001-07-05 Infineon Technologies Ag Communication module with parallel transmission diodes
US6653158B2 (en) * 2000-08-22 2003-11-25 The Regents Of The University Of California Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6870866B2 (en) * 2001-06-05 2005-03-22 Axcel Photonics, Inc. Powerpack laser diode assemblies
JP4151355B2 (en) * 2002-08-30 2008-09-17 住友電気工業株式会社 Light emitting module
US7440865B1 (en) * 2003-02-03 2008-10-21 Finisar Corporation Screening optical transceiver modules for electrostatic discharge damage
JP2004288674A (en) * 2003-03-19 2004-10-14 Fuji Xerox Co Ltd Surface-emitting semiconductor laser and optical communication system using it
KR100593995B1 (en) * 2004-01-02 2006-06-30 삼성전자주식회사 Vertical cavity surface emitting laser module
JP2005252032A (en) * 2004-03-04 2005-09-15 Furukawa Electric Co Ltd:The Surface emitting laser element and laser module using it
JP2006278662A (en) * 2005-03-29 2006-10-12 Nec Corp Optical source for optical communication
US20070047609A1 (en) * 2005-08-30 2007-03-01 Francis Daniel A Wafer testing of edge emitting lasers
JP4411540B2 (en) * 2005-09-15 2010-02-10 ソニー株式会社 Semiconductor laser device
JP2007123738A (en) * 2005-10-31 2007-05-17 Sony Corp Optical transmission module, optical transmission/reception module and optical communication apparatus
KR100809413B1 (en) * 2005-12-08 2008-03-05 한국전자통신연구원 Vertical cavity surface emitting laser having monitoring photodiode and method of fabrication the same
US7253386B2 (en) * 2005-12-12 2007-08-07 Xerox Corporation Method and apparatus for monitoring and controlling laser intensity in a ROS scanning system
TW200832851A (en) * 2007-01-29 2008-08-01 Truelight Corp Package structure for horizontal cavity surface-emitting laser diode with light monitoring function
FR2915029A1 (en) 2007-04-13 2008-10-17 Commissariat Energie Atomique COMPACT OPTOELECTRONIC DEVICE INCLUDING AT LEAST ONE SURFACE-EMITTING LASER
US8767784B2 (en) 2011-02-21 2014-07-01 Tyco Electronics Corporation Driver for supplying modulated current to a laser
US8401045B2 (en) 2011-05-27 2013-03-19 Fujitsu Limited Regulating a vertical-cavity surface-emitting laser (VCSEL)-based optical communication link
JP5946611B2 (en) 2011-07-15 2016-07-06 株式会社エンプラス Optical receptacle and optical module having the same
JP6134934B2 (en) 2011-12-02 2017-05-31 株式会社エンプラス Optical receptacle and optical module having the same
JP6011958B2 (en) * 2012-03-28 2016-10-25 株式会社エンプラス Optical receptacle and optical module having the same
DE102013201931B4 (en) * 2013-02-06 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laser component and method for its manufacture
JP6205194B2 (en) 2013-07-08 2017-09-27 株式会社エンプラス Optical receptacle and optical module
JP6289830B2 (en) 2013-07-23 2018-03-07 株式会社エンプラス Optical receptacle and optical module
US9559493B2 (en) 2015-06-09 2017-01-31 Sae Magnetics (H.K.) Ltd. Power monitoring device and transmitter having same
US9547142B1 (en) 2015-09-16 2017-01-17 Sae Magnetics (H.K.) Ltd. Optical transmitter module
US11894658B2 (en) 2017-11-29 2024-02-06 Vixar, Inc. Power monitoring approach for VCSELS and VCSEL arrays
CN111868487A (en) 2018-03-20 2020-10-30 维克萨股份有限公司 Eye-safe optical module
TWI675522B (en) * 2019-01-15 2019-10-21 晶智達光電股份有限公司 Light-emitting element
US11988894B2 (en) 2021-02-26 2024-05-21 Stmicroelectronics (Research & Development) Limited Lens displacement detection circuit for an optical device
DE102022114856A1 (en) 2022-06-13 2023-12-14 Trumpf Photonic Components Gmbh VCSEL for emitting laser light

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62285486A (en) * 1986-06-04 1987-12-11 Matsushita Electric Ind Co Ltd Semiconductor laser
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
US5147825A (en) * 1988-08-26 1992-09-15 Bell Telephone Laboratories, Inc. Photonic-integrated-circuit fabrication process
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
JPH0637300A (en) * 1992-07-15 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Optical integrated circuit
US5513202A (en) * 1994-02-25 1996-04-30 Matsushita Electric Industrial Co., Ltd. Vertical-cavity surface-emitting semiconductor laser
US5606572A (en) * 1994-03-24 1997-02-25 Vixel Corporation Integration of laser with photodiode for feedback control
US5574744A (en) * 1995-02-03 1996-11-12 Motorola Optical coupler
JPH08236554A (en) 1995-02-28 1996-09-13 Mitsubishi Electric Corp Semiconductor device, manufacture of semiconductor device, and die bonding method of semiconductor device
KR100259490B1 (en) * 1995-04-28 2000-06-15 윤종용 Vertical cavity surface emitting laser
JP3038703B2 (en) * 1995-07-20 2000-05-08 カシオ計算機株式会社 Semiconductor device, method of manufacturing the same, and method of mounting the same
US5812582A (en) * 1995-10-03 1998-09-22 Methode Electronics, Inc. Vertical cavity surface emitting laser feedback system and method
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
DE19601955C2 (en) * 1996-01-09 1997-12-11 Siemens Ag Optoelectronic transmitter module
US5835514A (en) 1996-01-25 1998-11-10 Hewlett-Packard Company Laser-based controlled-intensity light source using reflection from a convex surface and method of making same
KR0185950B1 (en) * 1996-04-25 1999-04-15 김광호 Optical power monitoring package of laser diode
US5907571A (en) * 1996-05-22 1999-05-25 Fuji Electric Co., Ltd. Semiconductor laser device and method for manufacturing the same
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
JPH1012971A (en) * 1996-06-21 1998-01-16 Hitachi Ltd Optical module and fabrication thereof
US5812581A (en) * 1996-07-26 1998-09-22 Honeywell Inc. Lens for a semiconductive device with a laser and a photodetector in a common container
US6083768A (en) * 1996-09-06 2000-07-04 Micron Technology, Inc. Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components
US6128134A (en) * 1997-08-27 2000-10-03 Digital Optics Corporation Integrated beam shaper and use thereof
US5857049A (en) * 1997-05-05 1999-01-05 Lucent Technologies, Inc., Precision alignment of optoelectronic devices
GB2326760B (en) * 1997-06-28 2002-02-13 Mitel Semiconductor Ab Optical source with monitor
US5943357A (en) * 1997-08-18 1999-08-24 Motorola, Inc. Long wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabrication
US6005262A (en) * 1997-08-20 1999-12-21 Lucent Technologies Inc. Flip-chip bonded VCSEL CMOS circuit with silicon monitor detector
US6037644A (en) * 1997-09-12 2000-03-14 The Whitaker Corporation Semi-transparent monitor detector for surface emitting light emitting devices
US6210514B1 (en) * 1998-02-11 2001-04-03 Xerox Corporation Thin film structure machining and attachment
US6040630A (en) * 1998-04-13 2000-03-21 Harris Corporation Integrated circuit package for flip chip with alignment preform feature and method of forming same
US6189208B1 (en) * 1998-09-11 2001-02-20 Polymer Flip Chip Corp. Flip chip mounting technique

Also Published As

Publication number Publication date
US20020110171A1 (en) 2002-08-15
GB0010361D0 (en) 2000-06-14
FR2793960A1 (en) 2000-11-24
US6368890B1 (en) 2002-04-09
US6678292B2 (en) 2004-01-13
GB2351180A (en) 2000-12-20
SE0001646L (en) 2000-11-06
CA2307779A1 (en) 2000-11-05
DE10021564A1 (en) 2000-11-09
JP2000340877A (en) 2000-12-08

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