RU99120099A - POWER SEMICONDUCTOR MODULE - Google Patents

POWER SEMICONDUCTOR MODULE

Info

Publication number
RU99120099A
RU99120099A RU99120099/28A RU99120099A RU99120099A RU 99120099 A RU99120099 A RU 99120099A RU 99120099/28 A RU99120099/28 A RU 99120099/28A RU 99120099 A RU99120099 A RU 99120099A RU 99120099 A RU99120099 A RU 99120099A
Authority
RU
Russia
Prior art keywords
power semiconductor
semiconductor module
module according
electrically conductive
conductive layer
Prior art date
Application number
RU99120099/28A
Other languages
Russian (ru)
Other versions
RU2225660C2 (en
Inventor
Томас ЛАНГ
Ханс-Рудольф ЦЕЛЛЕР
Original Assignee
Асеа Браун Бовери АГ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19843309A external-priority patent/DE19843309A1/en
Application filed by Асеа Браун Бовери АГ filed Critical Асеа Браун Бовери АГ
Publication of RU99120099A publication Critical patent/RU99120099A/en
Application granted granted Critical
Publication of RU2225660C2 publication Critical patent/RU2225660C2/en

Links

Claims (10)

1. Силовой полупроводниковый модуль, содержащий в корпусе (1) подложку (2), контактный поршень (3) и полупроводниковую схему (4) с двумя основными электродами (5, 6), причем первый основной электрод (5) находится в электрическом контакте с подложкой (2), а второй основной электрод (6) - с контактным поршнем (3), между основным электродом (5), и подложкой (2) или контактным поршнем (3) предусмотрен электропроводящий слой (7), отличающийся тем, что электропроводящий слой (7) содержит материал, который совместно с полупроводниковым материалом образует соединение или сплав, точка плавления которого находится ниже точки плавления полупроводникового материала.1. A power semiconductor module containing in the housing (1) a substrate (2), a contact piston (3) and a semiconductor circuit (4) with two main electrodes (5, 6), the first main electrode (5) being in electrical contact with a substrate (2), and a second main electrode (6) with a contact piston (3), between the main electrode (5) and the substrate (2) or contact piston (3) an electrically conductive layer (7) is provided, characterized in that the electrically conductive layer (7) contains a material which together with a semiconductor material forms a compound or an alloy whose melting point is below the melting point of the semiconductor material. 2. Силовой полупроводниковый модуль по п.1, отличающийся тем, что электропроводящий слой (7) является пленкой или пастой. 2. Power semiconductor module according to claim 1, characterized in that the electrically conductive layer (7) is a film or paste. 3. Силовой полупроводниковый модуль по п.2, отличающийся тем, что подложка (2) и полупроводниковая микросхема (4) и/или полупроводниковая микросхема (4) и контактный поршень (3) соединены без замыкания на массу. 3. The power semiconductor module according to claim 2, characterized in that the substrate (2) and the semiconductor chip (4) and / or the semiconductor chip (4) and the contact piston (3) are connected without short circuit to ground. 4. Силовой полупроводниковый модуль по п. 1, отличающийся тем, что электропроводящий слой (7) является слоем припоя. 4. Power semiconductor module according to claim 1, characterized in that the electrically conductive layer (7) is a solder layer. 5. Силовой полупроводниковый модуль по п.2 или 4, отличающийся тем, что толщина электропроводящего слоя (7) равна, по меньшей мере, половине толщины полупроводниковой микросхемы (4). 5. Power semiconductor module according to claim 2 or 4, characterized in that the thickness of the electrically conductive layer (7) is equal to at least half the thickness of the semiconductor chip (4). 6. Силовой полупроводниковый модуль по п.5, отличающийся тем, что составная часть образующего с полупроводниковым материалом эвтектику элемента составляет в электропроводящем слое (7), по меньшей мере, 10 процентов объема. 6. Power semiconductor module according to claim 5, characterized in that the component of the eutectic element forming with the semiconductor material is at least 10 percent of the volume in the electrically conductive layer (7). 7. Силовой полупроводниковый модуль по п.6, отличающийся тем, что полупроводниковым материалом является кремний и материал электропроводящего слоя (7) содержит Al, Аg, Аu, Сu или Мg или соединение этих элементов. 7. The power semiconductor module according to claim 6, characterized in that the semiconductor material is silicon and the material of the electrically conductive layer (7) contains Al, Ag, Au, Cu or Mg or a combination of these elements. 8. Силовой полупроводниковый модуль по п.7, отличающийся тем, что точка плавления соединения из кремния и материала электропроводящего слоя (7) находится ниже 900oС.8. Power semiconductor module according to claim 7, characterized in that the melting point of the silicon compound and the material of the electrically conductive layer (7) is below 900 o C. 9. Силовой полупроводниковый модуль по п.8, отличающийся тем, что полупроводниковая микросхема (4) является IGBT или диодом. 9. The power semiconductor module according to claim 8, characterized in that the semiconductor chip (4) is an IGBT or diode. 10. Силовой полупроводниковый модуль по п. 9, отличающийся тем, что корпус (1) полупроводниковой микросхемы (4) негерметичный. 10. The power semiconductor module according to claim 9, characterized in that the housing (1) of the semiconductor chip (4) is leaky.
RU99120099/28A 1998-09-22 1999-09-21 Semiconductor power module RU2225660C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843309A DE19843309A1 (en) 1998-09-22 1998-09-22 Short-circuit proof IGBT module
DE19843309.3 1998-09-22

Publications (2)

Publication Number Publication Date
RU99120099A true RU99120099A (en) 2001-07-27
RU2225660C2 RU2225660C2 (en) 2004-03-10

Family

ID=7881753

Family Applications (1)

Application Number Title Priority Date Filing Date
RU99120099/28A RU2225660C2 (en) 1998-09-22 1999-09-21 Semiconductor power module

Country Status (8)

Country Link
US (1) US6426561B1 (en)
EP (1) EP0989611B1 (en)
JP (1) JP2000106374A (en)
CN (1) CN1217409C (en)
CZ (1) CZ294300B6 (en)
DE (2) DE19843309A1 (en)
RU (1) RU2225660C2 (en)
UA (1) UA57774C2 (en)

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