RU99108307A - METHOD FOR GETTERING TREATMENT OF EPITAXIAL LAYERS OF SEMICONDUCTOR STRUCTURES - Google Patents

METHOD FOR GETTERING TREATMENT OF EPITAXIAL LAYERS OF SEMICONDUCTOR STRUCTURES

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Publication number
RU99108307A
RU99108307A RU99108307/28A RU99108307A RU99108307A RU 99108307 A RU99108307 A RU 99108307A RU 99108307/28 A RU99108307/28 A RU 99108307/28A RU 99108307 A RU99108307 A RU 99108307A RU 99108307 A RU99108307 A RU 99108307A
Authority
RU
Russia
Prior art keywords
epitaxial layers
semiconductor structures
gettering treatment
structures
amorphization
Prior art date
Application number
RU99108307/28A
Other languages
Russian (ru)
Other versions
RU2176422C2 (en
Inventor
Владимир Константинович Киселев
Сергей Владимирович Оболенский
Владимир Дмитриевич Скупов
Original Assignee
Научно-исследовательский институт измерительных систем
Filing date
Publication date
Application filed by Научно-исследовательский институт измерительных систем filed Critical Научно-исследовательский институт измерительных систем
Priority to RU99108307A priority Critical patent/RU2176422C2/en
Priority claimed from RU99108307A external-priority patent/RU2176422C2/en
Publication of RU99108307A publication Critical patent/RU99108307A/en
Application granted granted Critical
Publication of RU2176422C2 publication Critical patent/RU2176422C2/en

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Claims (1)

Способ геттерирующей обработки эпитаксиальных слоев полупроводниковых структур, включающий аморфизацию структур с нерабочей стороны подложки облучением ионами средних энергий, отличающийся тем, что перед аморфизацией нерабочую сторону структур облучают протонами с энергией равной энергии ионов при последующем облучении и дозой не ниже дозы аморфизации подложки ионным облучением.A method for the getter treatment of epitaxial layers of semiconductor structures, including the amorphization of structures from the non-working side of the substrate by irradiation with medium-energy ions, characterized in that prior to amorphization, the non-working side of the structures is irradiated with protons with an energy equal to the ion energy during subsequent irradiation and a dose not lower than the dose of amorphization of the substrate by ion irradiation.
RU99108307A 1999-04-19 1999-04-19 Method for carrying out gettering treatment of epitaxial layers of semiconductor structures RU2176422C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU99108307A RU2176422C2 (en) 1999-04-19 1999-04-19 Method for carrying out gettering treatment of epitaxial layers of semiconductor structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU99108307A RU2176422C2 (en) 1999-04-19 1999-04-19 Method for carrying out gettering treatment of epitaxial layers of semiconductor structures

Publications (2)

Publication Number Publication Date
RU99108307A true RU99108307A (en) 2001-01-27
RU2176422C2 RU2176422C2 (en) 2001-11-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU99108307A RU2176422C2 (en) 1999-04-19 1999-04-19 Method for carrying out gettering treatment of epitaxial layers of semiconductor structures

Country Status (1)

Country Link
RU (1) RU2176422C2 (en)

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