RU97109607A - Способ получения кремния - Google Patents
Способ получения кремнияInfo
- Publication number
- RU97109607A RU97109607A RU97109607/25A RU97109607A RU97109607A RU 97109607 A RU97109607 A RU 97109607A RU 97109607/25 A RU97109607/25 A RU 97109607/25A RU 97109607 A RU97109607 A RU 97109607A RU 97109607 A RU97109607 A RU 97109607A
- Authority
- RU
- Russia
- Prior art keywords
- silicon
- producing silicon
- chemical compound
- containing chemical
- gaseous
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims 6
- 239000010703 silicon Substances 0.000 title claims 6
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
Claims (1)
- Способ получения кремния, основанный на реакции термического разложения газообразного кремнийсодержащего химического соединения на нагретых электрическим током кремниевых подложках с образованием элементарного кремния и газообразных продуктов реакции, отличающийся тем, что в качестве кремнийсодержащего химического соединения используют тетраамминтрикремнефторид Si3(NH3)4F12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU97109607A RU2116963C1 (ru) | 1997-06-06 | 1997-06-06 | Способ получения кремния |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU97109607A RU2116963C1 (ru) | 1997-06-06 | 1997-06-06 | Способ получения кремния |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2116963C1 RU2116963C1 (ru) | 1998-08-10 |
| RU97109607A true RU97109607A (ru) | 1998-11-20 |
Family
ID=20193957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU97109607A RU2116963C1 (ru) | 1997-06-06 | 1997-06-06 | Способ получения кремния |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2116963C1 (ru) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2155158C1 (ru) * | 1999-10-07 | 2000-08-27 | Институт химии высокочистых веществ РАН | Способ получения моноизотопного кремния si28 |
| US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
| DE102008059408A1 (de) * | 2008-11-27 | 2010-06-02 | Schmid Silicon Technology Gmbh | Verfahren und Vorrichtungen zur Herstellung von Reinstsilizium |
-
1997
- 1997-06-06 RU RU97109607A patent/RU2116963C1/ru active
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