RU94010684A - WAY OF CRYSTAL SILICON FLOATING - Google Patents

WAY OF CRYSTAL SILICON FLOATING

Info

Publication number
RU94010684A
RU94010684A RU94010684/26A RU94010684A RU94010684A RU 94010684 A RU94010684 A RU 94010684A RU 94010684/26 A RU94010684/26 A RU 94010684/26A RU 94010684 A RU94010684 A RU 94010684A RU 94010684 A RU94010684 A RU 94010684A
Authority
RU
Russia
Prior art keywords
way
charge
crystal silicon
silicon floating
chips
Prior art date
Application number
RU94010684/26A
Other languages
Russian (ru)
Other versions
RU2121967C1 (en
Inventor
Н.В. Толстогузов
К.С. Елкин
Р.В. Пак
В.Н. Ильин
Д.К. Елкин
Original Assignee
Братский алюминиевый завод
Filing date
Publication date
Application filed by Братский алюминиевый завод filed Critical Братский алюминиевый завод
Priority to RU94010684A priority Critical patent/RU2121967C1/en
Priority claimed from RU94010684A external-priority patent/RU2121967C1/en
Publication of RU94010684A publication Critical patent/RU94010684A/en
Application granted granted Critical
Publication of RU2121967C1 publication Critical patent/RU2121967C1/en

Links

Claims (1)

Изобретение относится к области металлургии, а точнее, к электротермическому получению кремния в руднотермических печах. Изобретение позволяет уменьшить потери древесного угля и улучшить его использование, а также повысить извлечение кремния из шихты путем деления приготавливаемой шихты на две части - сначала взвешиваются и перемешиваются кварцит, нефтяной кокс, каменный уголь и часть щепы, а оставшаяся часть щепы смешивается с древесным углем в соотношении 3 : 1, после чего загружается сначала вторая часть шихты, а затем уже первая часть. Причем вторая часть шихты загружается только в зоны ее активного схода.The invention relates to the field of metallurgy, and more specifically, to the electrothermal production of silicon in ore-smelting furnaces. The invention allows to reduce the loss of charcoal and improve its use, as well as to increase the extraction of silicon from the charge by dividing the prepared mixture into two parts - first quartzite, petroleum coke, coal and part of the chips are weighed and mixed, and the rest of the chips are mixed 3: 1 ratio, after which the second part of the charge is loaded first, and then the first part. Moreover, the second part of the charge is loaded only in the zones of its active gathering.
RU94010684A 1994-03-28 1994-03-28 Method of smelting crystalline silicon RU2121967C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94010684A RU2121967C1 (en) 1994-03-28 1994-03-28 Method of smelting crystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94010684A RU2121967C1 (en) 1994-03-28 1994-03-28 Method of smelting crystalline silicon

Publications (2)

Publication Number Publication Date
RU94010684A true RU94010684A (en) 1996-01-10
RU2121967C1 RU2121967C1 (en) 1998-11-20

Family

ID=20154024

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94010684A RU2121967C1 (en) 1994-03-28 1994-03-28 Method of smelting crystalline silicon

Country Status (1)

Country Link
RU (1) RU2121967C1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2570153C1 (en) * 2014-08-29 2015-12-10 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Method of technical silicon melting
RU2629415C2 (en) * 2015-12-30 2017-08-29 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Reduction melting introduction method in ore-thermal electric furnace

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