RU93046763A - METHOD OF MAKING A SOLAR ELEMENT AND A SOLAR ELEMENT - Google Patents

METHOD OF MAKING A SOLAR ELEMENT AND A SOLAR ELEMENT

Info

Publication number
RU93046763A
RU93046763A RU93046763/25A RU93046763A RU93046763A RU 93046763 A RU93046763 A RU 93046763A RU 93046763/25 A RU93046763/25 A RU 93046763/25A RU 93046763 A RU93046763 A RU 93046763A RU 93046763 A RU93046763 A RU 93046763A
Authority
RU
Russia
Prior art keywords
plateau
semiconductor substrate
bevels
tops
contacts
Prior art date
Application number
RU93046763/25A
Other languages
Russian (ru)
Other versions
RU2122259C1 (en
Inventor
Р. Хецель
Original Assignee
Р. Хецель
Filing date
Publication date
Application filed by Р. Хецель filed Critical Р. Хецель
Priority to RU93046763A priority Critical patent/RU2122259C1/en
Priority claimed from RU93046763A external-priority patent/RU2122259C1/en
Publication of RU93046763A publication Critical patent/RU93046763A/en
Application granted granted Critical
Publication of RU2122259C1 publication Critical patent/RU2122259C1/en

Links

Claims (1)

Способ изготовления солнечного элемента состоит в том, что по меньшей мере на одной поверхности полупроводниковой подложки образуют путем механического удаления или травления полупроводникового материала структуру параллельно расположенных канавок, отделенных одна от другой возвышенностями, сужающимися к вершинам. На всю структурированную поверхность наносят пассивирующий слой, после чего вершины возвышенностей срезают на глубину пассивирующего слоя, в результате чего образуются параллельно расположенные платообразные области, от которых отходят скобы. На платообразные области, а также на один из скосов каждой области наносят материал, образующий электропроводящие контакты. Солнечный элемент содержит полупроводниковую подложку, на одной поверхности которой сформирована структура возвышенностей с платообразными вершинами и с боковыми скосами. На платообразных вершинах и частично на скосах расположены электропроводящие контакты. Поверхность полупроводниковой подложки в области между контактами покрыта пассивирующим материалом.A method of manufacturing a solar cell consists in forming, at least on one surface of a semiconductor substrate, by mechanical removal or etching of a semiconductor material, a structure of parallelly arranged grooves separated from one another by elevations tapering to the tops. A passivating layer is applied on the entire structured surface, after which the peaks of the hills are cut to the depth of the passivating layer, as a result of which parallel-arranged plateau-like areas are formed, from which brackets depart. The material forming the electrically conductive contacts is applied on the plateau-like areas, as well as on one of the bevels of each area. The solar cell contains a semiconductor substrate, on one surface of which a hill structure is formed with plateau-shaped tops and with side bevels. Electroconductive contacts are located on plateau tops and partially on bevels. The surface of the semiconductor substrate in the area between the contacts is covered with a passivating material.
RU93046763A 1993-06-07 1993-06-07 Solar cell and its manufacturing process RU2122259C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU93046763A RU2122259C1 (en) 1993-06-07 1993-06-07 Solar cell and its manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU93046763A RU2122259C1 (en) 1993-06-07 1993-06-07 Solar cell and its manufacturing process

Publications (2)

Publication Number Publication Date
RU93046763A true RU93046763A (en) 1995-09-20
RU2122259C1 RU2122259C1 (en) 1998-11-20

Family

ID=20147983

Family Applications (1)

Application Number Title Priority Date Filing Date
RU93046763A RU2122259C1 (en) 1993-06-07 1993-06-07 Solar cell and its manufacturing process

Country Status (1)

Country Link
RU (1) RU2122259C1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
RU2569086C2 (en) * 2011-07-26 2015-11-20 Эл Джи Кем, Лтд. Nanocrystalline layers based on low annealing point titanium dioxide for use in dye-sensitised solar cells and methods for production thereof
JP2013165160A (en) * 2012-02-10 2013-08-22 Shin Etsu Chem Co Ltd Method for manufacturing solar cell, and solar cell
RU2568421C1 (en) * 2014-07-25 2015-11-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет", (НИУ "БелГУ") SOLAR CELL BUILT AROUND p-TYPE HETEROSTRUCTURE OF AMORPHOUS AND NANOCRYSTALLINE SILICON NITRIDE - SILICON

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