RU93001115A - METHOD OF MANUFACTURING CRYSTAL SILICON - Google Patents

METHOD OF MANUFACTURING CRYSTAL SILICON

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Publication number
RU93001115A
RU93001115A RU93001115/26A RU93001115A RU93001115A RU 93001115 A RU93001115 A RU 93001115A RU 93001115/26 A RU93001115/26 A RU 93001115/26A RU 93001115 A RU93001115 A RU 93001115A RU 93001115 A RU93001115 A RU 93001115A
Authority
RU
Russia
Prior art keywords
ash
differences
coke
treatment
washed
Prior art date
Application number
RU93001115/26A
Other languages
Russian (ru)
Other versions
RU2060936C1 (en
Inventor
Н.В. Толстогузов
В.А. Циркунова
К.С. Елкин
В.Н. Ильин
Original Assignee
Сибирский металлургический институт им.Серго Орджоникидзе
Братский алюминиевый завод
Filing date
Publication date
Application filed by Сибирский металлургический институт им.Серго Орджоникидзе, Братский алюминиевый завод filed Critical Сибирский металлургический институт им.Серго Орджоникидзе
Priority to RU93001115A priority Critical patent/RU2060936C1/en
Priority claimed from RU93001115A external-priority patent/RU2060936C1/en
Publication of RU93001115A publication Critical patent/RU93001115A/en
Application granted granted Critical
Publication of RU2060936C1 publication Critical patent/RU2060936C1/en

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Claims (1)

Способ производства кристаллического кремния относится к металлургии и позволяет уменьшить расход дефицитного древесного угля и потери кремния при плавке. Сущность изобретения: шихту из кварцита, древесного угля, нефтяного кокса, древесной щепы и полукокса дозируют, смешивают и проплавляют. При этом полукокс предварительно обрабатывают азотной кислотой, после чего промывают водой, а отмытый продукт по меньшей мере один раз обрабатывают сначала раствором щелочи, а затем соляной кислотой и вновь промывают. Кроме того, полукокс перед химической обработкой отсеивают от мелочи - 5 мм, затем разделяют на низко- и высокозольные разности, после чего каждую из полученных разностей подвергают обработке кислотами и щелочами, затем продукты химобработки низкозольных разностей вводят в шихту для плавки высших сортов кремния, а высокозольных - низших его сортов. Обработку кислотами и растоврами щелочей и промывку водой проводят при 90 - 100°, Т:Ж = 1 : (5 - 10), а ее продолжительность составляет 1 - 5 ч. Для обработки используют азотную кислоту, 30%-ный раствор NaOH и 17%-ный раствор соляной кислоты.The method of production of crystalline silicon relates to metallurgy and reduces the consumption of scarce charcoal and the loss of silicon during smelting. The inventive mixture of quartzite, charcoal, petroleum coke, wood chips and char are metered, mixed and melted. In this case, the semi-coke is pretreated with nitric acid, then washed with water, and the washed product is treated at least once with an alkali solution, and then with hydrochloric acid, and again washed. In addition, before the chemical treatment, the semi-coke is sifted out from fines - 5 mm, then divided into low and high-ash differences, after which each of the obtained differences is subjected to treatment with acids and alkalis, then the products of chemical treatment of low-ash differences are introduced into the mixture to melt the highest grades of silicon, high-ash - its lower grades. Treatment with acids and solutions of alkalis and washing with water is carried out at 90-100 °, T: W = 1: (5-10), and its duration is 1-5 hours. For processing, use nitric acid, 30% NaOH solution and 17 % hydrochloric acid solution.
RU93001115A 1993-01-06 1993-01-06 Method for production of crystalline silicium RU2060936C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU93001115A RU2060936C1 (en) 1993-01-06 1993-01-06 Method for production of crystalline silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU93001115A RU2060936C1 (en) 1993-01-06 1993-01-06 Method for production of crystalline silicium

Publications (2)

Publication Number Publication Date
RU93001115A true RU93001115A (en) 1995-03-20
RU2060936C1 RU2060936C1 (en) 1996-05-27

Family

ID=20135387

Family Applications (1)

Application Number Title Priority Date Filing Date
RU93001115A RU2060936C1 (en) 1993-01-06 1993-01-06 Method for production of crystalline silicium

Country Status (1)

Country Link
RU (1) RU2060936C1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102173421B (en) * 2011-03-11 2013-01-16 信和光伏硅材料（福建）有限公司 Production technique of low-phosphorus and low-boron 3N high-purity silicon by ore furnace
RU2544833C1 (en) * 2014-03-14 2015-03-20 Открытое акционерное общество "Восточный научно-исследовательский углехимический институт" (ОАО "ВУХИН") Method of producing carbon-containing electroconductive material

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