RU27268U1 - SEMICONDUCTOR MICROWAVE DEVICE - Google Patents

Description

Semiconductor microwave device

The utility model relates to the field of microwave technology and can be used as a reflecting device that controls the power of microwave oscillations, in particular, as a protective switch or antenna switch-switch.

It is known a semiconductor device for controlling the amplitude of microwave oscillations of a reflecting type, containing a segment of a rectangular waveguide, on its opposite walls two coaxial short-circuited coaxial loops with a common inner conductor are installed, one semiconductor diode is included in the gap of the inner conductor of one of the loops. The device is also equipped with adjustment elements 1.

A semiconductor microwave device for controlling the power of microwave oscillations is known, containing a segment of a rectangular waveguide, on the opposite wide walls of which are two coaxial short-circuited coaxial loops with a common inner conductor, and a semiconductor diode included in the gap of the inner conductor of one of the loops near the short-circuited end. The outer conductor of the short-circuited coaxial loop with a semiconductor diode is made with a stepwise change in diameter at the point of inclusion of the semiconductor diode 2.

A disadvantage of the known devices is the shift of the resonances of the frequency characteristics in the modes of locking and transmitting the power of microwave oscillations in the short centimeter wavelength range due to the finite size of the semiconductor diode structure, approximately equal to 0.1 wavelength, significant in magnitude and large change in the housing capacity of the diode, which leads to a narrowing of the working frequency band of the device.

The objective of the claimed utility model is the creation of a broadband microwave device with increased electrical strength.

The specified technical result is achieved by the fact that in the known microwave device comprising a segment of a rectangular waveguide, a first curved coaxial loop containing a first semiconductor diode included in the gap of the inner conductor of the loop near its short-circuited end, according to a utility model, a second half-diode diode is included sequentially with the first semiconductor diode into the gap of the internal loop conductor at a distance from the first diode equal to approximately Xk / 2, where Xk is the average I working wavelength coaxial loop, wherein the first semiconductor diode its positive terminal connected to the output

g about g 1 1 6,: 5.

MPKN01R 1/15

the first pass-through microwave filter, the input of which is connected to the control device, and the second, identical to the first, short-circuited coaxial cable containing series-connected third semiconductor diode included in the gap of the internal conductor of the cable near its short-circuited end, the fourth semiconductor diode connected to a distance from the third diode, equal to approximately XK / 2, and the third creeping conductor diode is connected with its positive output to the output of the second strip barrier C An RF filter, the input of which is connected to the control device, with housing pin diodes used as semiconductor diodes, the first and second loops are installed parallel to each other on one wide wall of a segment of a rectangular waveguide so that the ends of the internal conductors connected to the negative terminals, respectively, of the second and fourth semiconductor diodes, pass through holes of a larger diameter into the rectangular waveguide and are electrically connected to its other wide wall, and the distance is I wait for the axes of the ends of the internal conductors of the loops to be Xb / 4, where Xb is the average working wavelength in a rectangular waveguide.

The increase in broadband, electrical strength and speed of the device is due to the sequential inclusion of two package p-i-n diodes in the breaks of the internal conductors of each short-circuited coaxial cable.

The utility model is illustrated in the drawing, which shows a circuit diagram of a semiconductor microwave device.

The proposed semiconductor microwave device contains a segment of a rectangular waveguide (1), identical to the first (2) and second (3) short-circuited coaxial cables, the first (4) and second (5) band-pass microwave filters. To match the wave impedances of the loops and the rectangular waveguide (1), its cross section is reduced (the height of the narrow wall is reduced by a factor of five compared to the standard waveguide). The first short-circuited loop (2) contains the first semiconductor diode (6), included in the gap of the inner conductor (7) of the loop near its short-circuited end. A second semiconductor diode (8) is connected in series with the first semiconductor diode (6) in the gap of the internal conductor of the loop (6) at a distance from the first diode of approximately Xk / 2, where Xk is the average operating wavelength in the coaxial loop. The first semiconductor diode (6) is connected with its positive output to the output of the first band-pass microwave filter (4), the input of which is connected to the control device (not shown in the diagram). The second short-circuited coax Q Oi sial loop (3), containing the third semiconductor a diode (9) included in the gap of the inner conductor (10) of the loop near its short-circuited end, and a fourth semiconductor diode (11), included at a distance from the third diode of approximately Xk / 2. The third semiconductor diode (9) is connected with its positive output to the output of the second bandpass microwave filter (5), the input of which is connected to the control device. The first (2) and second (3) loops are installed parallel to each other on one wide wall of a segment of a rectangular waveguide (1), and their bodies are external conductors of loops, are rigidly attached to it. The ends of the inner conductors (7), (10) connected to the negative terminals of the second (8) and fourth (11) semiconductor diodes pass through the holes of a larger diameter made in this wall, into the rectangular waveguide (1) and are electrically connected to its other wide wall. The distance between the axes of the ends of the internal conductors of the loops is equal to XB / 4, where XB is the average working wavelength in a rectangular waveguide. As the semiconductor diodes used case p-i-n - diodes type 2A520A or 2A542A 3.

A semiconductor microwave device operates as follows.

The control voltage is supplied from the control device, for example, through the first bandpass microwave filter (4) to the case p-i-n diodes (6) and (8) to obtain two resonant states in the device. When a positive bias voltage is applied to the housing pin pin diodes (6) and (8) through the input of the first bandpass microwave filter (4), the first short-circuited coaxial loop (2) is equivalent to a series resonant oscillatory circuit included in a segment of a rectangular waveguide (1). The input impedance of such a loop is close to zero, in the locking mode, a large attenuation is introduced and its inclusion in the transmission line is equivalent to a short circuit of the line at the point where the short-circuited coaxial loop is turned on. Therefore, the device with a positive bias voltage on the case p-i-n diodes (6) and (8) is closed. When a negative bias voltage is applied to the case p-i-n diodes through the input of the first bandpass filter (4), the first short-circuited coaxial loop (2) is equivalent to a parallel resonant oscillatory circuit connected in parallel to a rectangular waveguide. The input impedance of a short-circuited coaxial loop is much greater than the wave impedance of a rectangular waveguide and the loss of microwave power in a segment of a rectangular waveguide (1) is minimal. Consequently, the device

 /.

with a negative bias voltage on the case p-i-n diodes (6) and (8) is open for the passage of microwave power. The second short-circuited loop (3) works similarly.

The installation of two short-circuited loops at a distance between the axes of the ends of their inner conductors ensures a constant value of blocking losses of more than 25 dB at all frequencies in the 10% band of the range, while a single short-circuit loop provides a value of blocking losses of more than 25 dB at an average and no more 12 dB at the extreme frequencies in the 10% band of the wavelength range.

Thus, in comparison with the prototype, the use of the proposed utility model allows the development of broadband, high-speed devices of a reflective type for a short centimeter wavelength range, for example, circuit breakers or multi-channel small-sized antenna switches, which control a high level of microwave oscillation power.

Sources of information;

1.US No. 3868607, NCI 333-98.1975.

2.SU No. 458066, IPC N 01 P 1 / 10.1975.

3. “Semiconductor devices. Microwave diodes. Directory. B.A. Nalivaiko, A.S. Bermin, V. G. Bozhkov et al. Edited by B. A. Nalivaiko, Tomsk, Moscow State Pedagogical University RASKO, 1992, pp. 106-107,119-120.

Claims (1)

A semiconductor microwave device comprising a segment of a rectangular waveguide, a first short-circuited coaxial cable containing a first semiconductor diode included in the gap of the internal conductor of the cable near its short-circuited end, characterized in that a second semiconductor diode is inserted into it, connected in series with the first semiconductor diode in the gap the inner conductor loop at a distance from the first diode is equal _to approximately λ / 2, where λ _k - the average operating wavelength in a coaxial loop, with The first semiconductor diode is connected with its positive output to the output of the first band-pass microwave filter, the input of which is connected to the control device, and the second, identical to the first, short-circuited coaxial cable containing a third semiconductor diode connected in series, which is connected to the gap of the internal conductor of the cable near its short-circuited end, the fourth semiconductor diode connected in the region of the third diode is equal _to approximately λ / 2, wherein the third semiconductor diode with its positive output it is connected to the output of the second band-pass microwave filter, the input of which is connected to the control device, while case pin diodes are used as semiconductor diodes, the first and second loops are installed parallel to each other on one wide wall of a segment of a rectangular waveguide so that the ends of the inner conductors connected to the negative terminals, respectively, of the second and fourth semiconductor diodes, pass through holes of a larger diameter into a rectangular wave novoda and are electrically connected to its other wide wall, and the distance between the axes of the ends of the inner conductors of the loops is λ _in / 4, where λ _in is the average working wavelength in a rectangular waveguide.