RU2671294C1 - Method for making semiconductor device - Google Patents

Abstract

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of semiconductor manufacturing technology, in particular to the technology of manufacturing a field effect transistor with a reduced defect density. Method for manufacturing a semiconductor device is proposed, comprising forming plain polysilicon over a layer of silicon oxide at a rate of 10 nm/min at a temperature of 650 °C, with a silane consumption of 10 cm³/min and hydrogen 22 l/min, thickness 400 nm and carrying out ion implantation of nitrogen with an energy of 1,215 keV, a dose of 5*1,016–2*10¹⁷ cm^-2 at a substrate temperature of 100 °C, followed by heat treatment at 450 °C for 30 minutes in the formation gas. Technology of the method consists in: growing a layer of silicon oxide on the plates of p-type silicon of conductivity with a specific resistance of 4.5 ohm*cm, the orientation (100), growing plain polysilicon layer on top of it using pyrolysis at a rate of 10 nm/min at 650 °C, with a silane consumption of 10 cm³/min and hydrogen 22 l/min, thickness 400 nm, followed by ion implantation of nitrogen with an energy of 12–15 keV, a dose of 5*10¹⁶–2*10¹⁷ cm^-2, at a substrate temperature of 100 °C. Carry out heat treatment at a temperature of 450 °C for 30 minutes in the formation gas and then the manufacture of devices using standard technology.

EFFECT: reduction in defect density, ensuring processability, improving instrument parameters, improving quality and increasing the yield percentage.

1 cl, 1 tbl

Description

The invention relates to the field of production technology of semiconductor devices, in particular to the manufacturing technology of a field effect transistor with a reduced defect density.

A known method of manufacturing a semiconductor device [US Pat. 5296398 USA, MKI HO1L 21/338] with improved controllability in which the gate structure on the doped channel region is coated with a layer of silicon oxynitride. Then, ion implantation is carried out with the formation of a deep drainage region and a shallow drainage region with a relatively lower doping level and a channel section separated from the gate electrode. In such semiconductor devices, due to the non-technological process of creating active regions, a large number of defects are formed that worsen the parameters of the devices.

A known method of manufacturing a semiconductor device [US Pat. 5323046 USA, MKI HO1L 29/04] providing a small influence of technological operations on the quality of the gate oxide layer by forming an isolated gate electrode by creating a p + drain region using the gate electrode as a mask, remote from the gate and overlapping with the drain, and then a drain contact is formed.

The disadvantages of the method are:

- increased density of defects;

- increased values of leakage currents;

- low manufacturability.

The problem solved by the invention: reducing the density of defects, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of yield.

The problem is solved by forming unalloyed polysilicon over a layer of silicon oxide at a speed of 10 nm / min at a temperature of 650 ° C, with a flow rate of silane 10 cm ³ / min and hydrogen 22 l / min, 400 nm thick and ion implantation of nitrogen with an energy of 1215 keV, dose of 5 * 1016-2 * 10 ¹⁷ cm ^-2 at a substrate temperature of 100 ° C, followed by heat treatment at a temperature of 450 ° C for 30 minutes in forming gas.

The technology of the method is as follows: a silicon oxide layer is grown on p-type silicon wafers with a specific resistance of 4.5 Ohm * cm, orientation (100), an unalloyed polysilicon layer was grown at a speed of 10 nm / min at a temperature of 650 using pyrolysis ° С, at a flow rate of silane 10 cm ³ / min and hydrogen 22 l / min, 400 nm thick, followed by ion implantation of nitrogen with an energy of 12-15 keV, dose 5 * 10 ¹⁶ -2 * 10 ¹⁷ cm ^-2 , at substrate temperature 100 ° C. Then, heat treatment was carried out at a temperature of 450 ° C for 30 min in a forming gas and then the manufacture of devices using standard technology.

By the proposed method, devices were manufactured and investigated. The processing results are presented in the table.

Experimental studies have shown that the yield of suitable semiconductor devices on a batch of wafers formed in the optimal mode increased by 16.1%.

Effect: reducing the density of defects, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of yield.

The stability of the parameters over the entire operating temperature range was normal and consistent with the requirements.

The proposed method of manufacturing a semiconductor device by forming over a layer of silicon oxide undoped polysilicon at a speed of 10 nm / min at a temperature of 650 ° C, at a flow rate of silane 10 cm ³ / min and hydrogen 22 l / min, carrying out ion implantation of nitrogen with an energy of 12-15 keV , with a dose of 5 * 10 ¹⁶ -2 * 10 ¹⁷ cm ^-2 , at a substrate temperature of 100 ° С followed by heat treatment at a temperature of 450 ° С for 30 min in forming gas, it allows to increase the percentage of suitable devices and improve their reliability.

Claims (1)

A method of manufacturing a semiconductor device, including a substrate, processes for the formation of source, drain, gate, gate gate regions of silicon oxide, characterized in that a layer of undoped polysilicon is grown over a layer of silicon oxide at a speed of 10 nm / min at a temperature of 650 ° C, with a silane flow rate of 10 cm ³ / min and hydrogen 22 l / min, 400 nm thick, followed by ion implantation of nitrogen with an energy of 12-15 keV, a dose of 5 * 10 ¹⁶ -2 * 10 ¹⁷ cm ^-2 , at a substrate temperature of 100 ° C and heat treatment at a temperature of 450 ° C for 30 min in forming g se.