RU2536771C1 - Method to make hybrid integral circuit of shf band - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: method for manufacture of a powerful hybrid integral circuit of SHF band includes formation of a multilayer dielectric substrate by decomposing of individual dielectric layers with formation of at least one through-hole in the substrate, further sintering and annealing, fixing of the substrate with screen earthing metallisation to the electro- and heat-conductive base, fixing of the active heat-generating component in one through-hole in the substrate, connecting of electric bonding pads of the active heat-generating component with topologic lines of the substructure metalised coating and control of electric characteristics for the hybrid integral circuit. While manufacturing individual dielectric layers in the multilayer dielectric substrate the through-holes are made with a certain cross-section. While applying metalised coating of topological lines and screen earthing metallisation the circuit is filled with material of the metalised coating through the through-hole and additional through-holes. While forming a multilayer dielectric substrate the individual dielectric layers are placed in a certain pattern and formation of the active heat-generating component is made directly in one through-hole at the multilayer dielectric substrate.

EFFECT: reducing factory labour hours and improving electric characteristics.

1 dwg, 1 tbl

Description

The invention relates to electronic equipment and can be used to create powerful hybrid integrated circuits of the microwave range of multi-purpose.

A known method of manufacturing a hybrid microwave integrated circuit, including the manufacture of a dielectric substrate metallized on both sides with a topological pattern of a metallization coating on the front side of at least one mounting pad located on the electric and heat-conducting elements located in the holes of the dielectric substrate, arrangement and fixing dielectric substrate with the reverse side to the heat sink base, the location of crystals of open-frame electronic devices for installation fixing them with a binder and connecting the electrically contact pads of the crystals of open-frame electronic devices with the topological pattern of the metallization coating on the front side of the dielectric substrate, in which, in order to improve heat removal conditions, reduce weight and size characteristics and stray electrical parameters, the mounting pad is placed in a metallized recess, this distance from the installation site to the front side of the substrate is taken equal to the total thickness of the crystals lla unpackaged electronic device and binder.

In addition, in order to further increase the yield, the end metallization of the walls of the recess and the gap between the side faces of the crystal of the electronic device and the walls of the recess are covered with a dielectric composition [1].

The disadvantage is the low manufacturability, due to the high complexity of manufacturing both recesses and holes in the dielectric substrate of the correct geometric shape.

A known method of manufacturing a powerful hybrid microwave integrated circuit, including the manufacture of a multilayer dielectric substrate with a given sequence of dielectric layers, providing for the manufacture of individual dielectric layers with at least one through hole, applying a given metallization coating of a topological pattern to each of the individual dielectric layers and screen grounding metallization on the reverse side of the lower layer of the multilayer dielectric substrate, Formation of a given sequence of a multilayer dielectric substrate by arranging individual dielectric layers with simultaneous combination of their through holes to ensure the formation of at least one through hole in the multilayer dielectric substrate, subsequent sintering and annealing, input control of the electrical characteristics of the active fuel component, location and fixing of the multilayer the dielectric substrate of the shield grounding metallization on electrical and the conductive base, the location and fastening in each through hole of the multilayer dielectric substrate of the active fuel component with the arrangement of their front sides in the same plane, the connection of the electrically contact pads of the active fuel component with the topological pattern of the metallization coating of the multilayer dielectric substrate. Next, they control the electrical characteristics of the hybrid microwave integrated circuit as a whole [2] - prototype.

The advantage of the prototype over analogues is the use of a multilayer dielectric substrate of a material made by means of low-temperature co-fired ceramics (LTCC).

This made it possible to use low-temperature metallization pastes for applying a metallization coating of a topological pattern and screen grounding metallization, providing connecting conductors with higher conductivity and, accordingly, lower losses of the transmitted microwave signal.

The disadvantage is the insufficiently high electrical characteristics and the high complexity of manufacturing, the latter due to the need for input control of the electrical characteristics of the active fuel component.

The technical result of the claimed invention is to reduce the complexity of manufacturing and, accordingly, increase manufacturability and improve electrical characteristics by improving heat dissipation.

The specified technical result is achieved by a method of manufacturing a powerful hybrid microwave integrated circuit,

comprising the manufacture of individual dielectric layers of a given sequence of a multilayer dielectric substrate with at least one through hole,

applying a predetermined metallization coating of a topological pattern to each of the individual dielectric layers and screen grounding metallization on the reverse side of the lower layer of the multilayer dielectric substrate,

the formation of a given sequence of a multilayer dielectric substrate by arranging individual dielectric layers with simultaneous combination of their through holes to ensure the formation of at least one through hole in the multilayer dielectric substrate,

subsequent sintering and annealing,

the location and fixing of the multilayer dielectric substrate with a shield grounding metallization on an electric and heat-conducting base,

fixing the formed active fuel component in one through hole of the multilayer dielectric substrate, ensuring that their front sides are in the same plane,

the connection of the electrically contact pads of the active fuel component with the topological pattern of the metallization coating of the multilayer dielectric substrate,

monitoring the electrical characteristics of the hybrid integrated circuit.

In the present invention, in the manufacture of individual dielectric layers of a given sequence of a multilayer dielectric substrate, the first part is made with one through-hole section that is commensurate with the active heat-generating component with its excess in the section of not more than 0.5 mm, the second part with a smaller section, while in the latter parts made through holes with a diameter of 0.05-0.5 mm, the ratio of the area of one through hole in the first part of the individual dielectric layers and the sum of the area the days of one through hole with a smaller cross section and additional through holes are equal to 1.4-10, respectively,

when a predetermined metallization coating of a topological pattern is applied to each of the individual dielectric layers and a screen grounding metallization on the reverse side of the lower layer of the multilayer dielectric substrate, one through hole and additional through holes are simultaneously filled with the metallization coating material,

when forming a given sequence of a multilayer dielectric substrate, separate dielectric layers with one through hole with a large cross section are arranged on its front side, with a smaller cross section on the reverse side, and the depth H of the wide part of one through hole of the multilayer dielectric substrate is performed according to the expression:

, где $$H=\frac{h\times n}{k}$$

where

h is the thickness of a single dielectric layer with one through hole with a large cross section, mm,

n is the number of individual dielectric layers with one through hole with a large cross section,

k - coefficient equal to 0.8-1.2,

while the individual dielectric layers of the first and second parts of the multilayer dielectric substrate are arranged with the combination of their same through holes and additional through holes between themselves in plan and at the same time in terms of one through holes of the first part of the individual dielectric layers,

and the formation of the active heat-generating component is carried out directly in one through hole of the multilayer dielectric substrate, while the heat-releasing base of the active heat-generating component is sequentially placed and fixed in it, on which at least one microstrip board and at least one the crystal of the active semiconductor device and carry out in-circuit electrical connections of the active fuel component.

Disclosure of the invention

The set of essential features of the claimed method of manufacturing a powerful hybrid integrated circuit microwave range, namely:

The proposed other manufacture of separate dielectric layers will ensure the formation of one through hole in the multilayer dielectric substrate for arranging and fixing an active heat-generating component in it in the form of a step and thereby increase the manufacturability of the arrangement of the active heat-generating component and, accordingly, increase the manufacturability of the faces of the multilayer dielectric substrate and fuel component in one plane, and thereby smart the extension of the length of the connecting conductors, and thereby the reduction of stray inductances and, as a consequence of this, -

firstly, increasing the manufacturability of a method for manufacturing a powerful hybrid microwave integrated circuit in general,

secondly, the improvement of its electrical characteristics.

Moreover, the proposed implementation in another part of the individual dielectric layers of a given sequence of a multilayer dielectric substrate of additional through holes in the cross-sectional size of 0.05-0.5 mm ² while ensuring the specified limit of the ratio of the area of one through hole in the first part of the individual dielectric layers and the sum of the areas of one through holes with a smaller cross section and additional through holes in the second part of the individual dielectric layers (1.4-10.0) will provide:

improving heat removal from the active heat-generating component by eliminating the deformation-shrinkage of the metallization paste material in the through hole with a smaller cross section during subsequent sintering and annealing of a given sequence of individual dielectric layers of the multilayer dielectric substrate and thereby eliminating the formation of voids in it,

improving the manufacturability of filling as one through hole with a smaller cross section, and additional through holes.

And, as a consequence of both,

firstly, improving the electrical characteristics of the hybrid integrated circuit and,

secondly, improving the manufacturability of the hybrid integrated circuit as a whole.

The implementation of additional through holes with a cross-sectional dimension of less than 0.05 mm ^{2 is} technologically difficult from the point of view of filling it with metallization paste, and more than 0.5 mm ^{2 is} excluded, since during subsequent sintering and annealing of a given sequence of individual dielectric layers of a multilayer dielectric substrate, to the above deformation-shrinkage of metallization paste and to the formation of voids in the through holes.

The implementation of through holes with the specified limit of the ratio of the area of one through hole in the first part of the individual dielectric layers and the sum of the areas of one through hole with a smaller cross section and the additional through holes in the second part of the individual dielectric layers (1.4-10.0) in the first case to improve the heat sink, but at the same time reduces the manufacturability of the manufacturing process, and in the second (more than 10.0) - to the deterioration of the heat sink.

Making through holes in each individual dielectric layer by punching is the simplest and most technologically advanced method used today when working with low-temperature co-fired ceramics (LTCC).

The formation of the active heat-generating component directly in one through hole of the multilayer dielectric substrate, while the heat-releasing base of the active heat-generating component is sequentially placed in it on which at least one microstrip board and at least one active semiconductor device crystal are arranged in-circuit electrical connections of the active heat-generating component will ensure a reduction in technological operations and, including follows, to control the electrical characteristics.

Monitoring and tuning of electrical characteristics is carried out only by the hybrid microwave integrated circuit as a whole, after the formation of the active heat-generating component.

The invention is illustrated in the drawing.

The drawing shows a structural diagram of the technological operations of the manufacture of the claimed powerful hybrid integrated circuit microwave range.

An example of a specific implementation of the claimed powerful hybrid microwave integrated circuit

Separate dielectric layers of a given sequence of a multilayer dielectric substrate are made from the material of low-temperature co-fired ceramics (LTCC) of the DuPont 951 brand, for example, with one through hole, the latter being made by punching.

In this case, the first part is made with one through hole with a cross section equal to (4.2 × 5.1) mm, which is commensurate with the active heat-generating component of PUM M42230-3 APNT 43810.24 TU with a size of (4.0 × 5.0) mm ² ,

the second part with a smaller cross-section, while the sum of the areas of one through hole with a smaller cross-section and additional through holes in the second part of the individual dielectric layers is 3.74 mm ² , which corresponds to the ratio of their cross-sectional areas of 5.7 (pos. 1a),

while in the last part perform additional through holes with a cross-sectional size of 0.275 mm ² (pos.1a).

Set metallization coatings of the topological pattern are applied on each of the individual dielectric layers and on-screen grounding metallization on the back side of the lower layer of the multilayer dielectric substrate by applying metallization paste grade 6142D by the method of thick-film technology, while simultaneously filling the specified metallization paste with one through hole and additional through holes in their second part (pos.1b).

A predetermined sequence of the multilayer dielectric substrate is formed by arranging the individual dielectric layers with simultaneous combination of their through holes to ensure the formation of one through hole in the multilayer dielectric substrate, and separate dielectric layers with one through hole with a large cross section to a depth H equal to 0.25 mm, which is calculated according to the specified expression with h - the thickness of a single dielectric layer with one a transportable hole with a large cross section equal to 0.125 mm, n is the number of individual dielectric layers with one through hole with a large cross section equal to 2.0, k is a coefficient equal to 1.0, while the individual dielectric layers of the first and second parts are aligned their one through holes and additional through holes between themselves in plan and at the same time in plan of one through holes of the first part of the individual dielectric layers of the multilayer dielectric substrate (item 1B).

Then sintering and annealing are carried out at a temperature of 880 ± 20 ° C for 10 min (pos. 1g).

The multilayer dielectric substrate is screened and secured by a shield grounding metallization on an electro- and heat-conducting base made of a pseudo-alloy of the grade MD 50 (item 2).

The active heat-generating component is formed directly in one through hole of the multilayer dielectric substrate, and the heat-releasing base of the active heat-generating component is sequentially placed in it on which at least one microstrip board and at least one active semiconductor device crystal with its subsequent consolidation and the implementation of in-circuit electrical connections of the active fuel component (item 3).

Electrically connect the contact pads of the specified active fuel component with the topological pattern of the metallization coating of the multilayer dielectric substrate (item 4).

They control and configure the electrical characteristics of the hybrid microwave integrated circuit (item 5).

Examples 2-5

Analogously to example 1, samples are made of a powerful hybrid microwave integrated circuit, but with other technological parameters both indicated in the claims (examples 2-3) and beyond (examples 4-5).

Example 6 corresponds to a method for manufacturing a powerful hybrid microwave integrated circuit of the prototype.

On fabricated samples, the output power and gain were measured.

The data are presented in the table.

As can be seen from the table, samples of a powerful hybrid microwave integrated circuit manufactured in accordance with the claimed method have an output power of about 2.5 W and a gain of about 12.5 dB (examples 1-3).

Unlike samples made with technological parameters that go beyond its limits (examples 4-5), as well as a prototype (example 6), which have an output power of about 2.3 W and a gain of about 10 dB.

Thus, the claimed method of manufacturing a powerful hybrid microwave integrated circuit will provide, in comparison with the prototype:

reducing the complexity of manufacturing and, accordingly, increasing manufacturability,

improved electrical performance, an increase in power output of about 30 percent and a gain of 20 percent.

Information sources

1. RF patent No. 2227345, IPC H01L 27/13, H05 1/16, priority 02/26/2002, publ. 04/20/04.

2. RF patent No. 2390877, IPC H01L 25/16, H05K 1/02, priority of the invention 04/08/2009, publ. 05/27/10.

Example Number Separate dielectric layers with a given sequence of a multilayer dielectric substrate Type and size of active component (mm ² ) Measurement results The first part with a through hole with a large cross section commensurate with the active heat-generating component The second part with the sum of the main through hole with a smaller cross section and additional holes The ratio of the cross-sectional areas of the first part and the second Depth of the wide part of the through hole of the multilayer dielectric substrate (H, mm) Output Power (P, W) Coef. gain (K _y , dB) Its cross-sectional area (mm ² ) Layer thickness (h, mm) Number of layers (n, pcs.) Coef. (K) Sectional area of the sum of holes (mm ² ) one 4.2 × 5.1 = 21.42 0.125 2 one 3.74 5.7 0.25 PUM (4.0 × 5.0) = 20.0 2,55 13.15 2 4.1 × 5.1 = 20.91 0.125 2 0.8 15.0 1.4 0.2 - // - 2.47 12.25 3 4.5 × 5.5 = 24.75 0.125 2 1,2 2,475 10 0.3 - // - 2.45 11.9 four 4.05 × 5.05 = 20.45 0.125 2 0.7 17.0 1,2 0.175 - // - 2,35 10.1 5 4.6 × 5.6 = 25.76 0.125 2 1.3 2.15 12 0.325 - // - 2.29 10.15 6 - prototype 4.5 × 5.7 = 25.65 0.125 5 - - - - - // - 2.25 10.25

Claims (1)

A method of manufacturing a powerful hybrid microwave integrated circuit, including the manufacture of individual dielectric layers of a given sequence of a multilayer dielectric substrate with at least one through hole, applying a predetermined metallization coating of a topological pattern to each of the individual dielectric layers and a shield ground metallization on the back side of the lower layer of a multilayer dielectric substrate, the formation of a given sequence of a multilayer dielectric substrate by arranging individual dielectric layers with simultaneous alignment of their through holes to ensure the formation of at least one through hole in a multilayer dielectric substrate, subsequent sintering and annealing, location and fixing of the multilayer dielectric substrate by screen grounding metallization on an electrically and heat-conducting base, fixing the formed active fuel component in one through hole of a multilayer dielectric spoons with the provision of the location of their front sides in one plane, the connection of the electrically contact pads of the active heat-generating component with the topological pattern of the metallization coating of the multilayer dielectric substrate, the control of the electrical characteristics of the hybrid integrated circuit, characterized in that in the manufacture of individual dielectric layers of a given sequence of the multilayer dielectric substrate the part is made with one through hole with a cross section proportional to active heat-generating component with its excess in the cross-section not more than 0.5 mm, the second part with a smaller cross-section, while in the last part additional through holes with a diameter of 0.05-0.5 mm, the ratio of the area of one through hole in the first part of the individual the dielectric layers and the sum of the areas of one through hole with a smaller cross section and additional through holes are equal to 1.4-10, respectively, when applying a given metallization coating of a topological pattern to each of the individual of electric layers and screen grounding metallization on the back side of the lower layer of the multilayer dielectric substrate simultaneously fill one through hole and additional through holes in the metallization coating material, when forming a given sequence of the multilayer dielectric substrate, separate dielectric layers with one through hole with a large cross section are placed on its front side, on the reverse side - with a smaller cross section, while the depth H of the wide part of one through the holes of the multilayer dielectric substrate are performed according to the expression:

where
h is the thickness of a single dielectric layer with one through hole with a large cross section, mm,
n is the number of individual dielectric layers with one through hole with a large cross section,
k - coefficient equal to 0.8-1.2,
in this case, the individual dielectric layers of the first and second parts of the multilayer dielectric substrate are arranged with the combination of their one through holes and additional through holes in a plan and at the same time in the plan of one through holes of the first part of the individual dielectric layers, and the formation of an active heat-generating component is carried out directly in one through holes of the multilayer dielectric substrate, while the heat sink base is successively arranged and secured therein e of the active fuel component, on which at least one microstrip board and at least one crystal of the active semiconductor device are arranged and fixed, and in-circuit electrical connections of the active fuel component are made.

Images