RU2396634C2 - METHOD OF MAKING HETEROGENEOUS p-n JUNCTION BASED ON ZINC OXIDE NANORODS - Google Patents

Abstract

FIELD: chemistry.

SUBSTANCE: method of making a heterogeneous p-n junction based on zinc oxide nanorods involves growing zinc oxide nanorods which are vertical and are interlocked with the base on a conducting doped silicon wafer through gas-phase deposition, with subsequent deposition of nickel oxide of the said nanorods until formation of a continuous layer on the tips of the nanorods. Nickel oxide is deposited on the zinc oxide nanorods at an angle to the horizontal axis of the zinc oxide nanorods which prevents deposition nickel oxide onto the base of the nanorods.

EFFECT: higher quality of p-n junction owing to high quality of the p-n junction based on compatible components in which there is no abridgement of the junction.

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Description

The invention relates to the field of micro- and nanoelectronics and can be used to develop new nanodevices based on the pn junction, such as photodetectors, sensors, field effect transistors, LEDs, etc.

A known method for producing a heterogeneous pn junction, including sequential deposition on a semiconductor substrate of epitaxial films of zinc oxide and nickel oxide (Hiromichi Ohta, Masao Kamiya, Toshio Kamiya, Masahiro Hirano, HideoHosono, UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO / n-ZnO, Thin Solid Films, 445 (2003) 317-321).

However, the pn junction obtained on the basis of such a structure does not satisfy the requirements of modern technology.

There is a method for producing a heterogeneous pn junction in which zinc oxide nanorods are grown on a semiconductor film located on an aluminum oxide insulating substrate so that there are gaps between the nanorods that are filled with a dielectric to prevent shortening of the pn junction during the deposition of an electrical contact. As materials of the p-type semiconductor film, semiconductor III-V groups, II-VI and IV / groups were taken. (Yi Gyu-Chul, Park Won-Il, pn heterojunction stmcture of zinc oxide - based nanorod and semiconductor thin film, preparation thereof, and nanodevices comprising the same, WO 2004114422).

However, the manufacture of the above structure often leads to oxidation of the surface of a p-type semiconductor film of conductivity, which affects the properties of the pn junction.

A known method adopted for the prototype for producing a heterogeneous pn junction based on zinc oxide nanorods and a semiconductor film, including growing by the method of gas-phase deposition of vertically oriented and locked at the base of zinc oxide nanorods on a conductive doped silicon substrate, followed by deposition of nickel oxide on them to form a continuous layer at the tips of nanorods (RU. Pat. No. 2323272, IPC В82В 1/00, publ. 05/10/2008).

However, when nickel oxide is deposited on zinc oxide nanorods, it is highly likely that the p-n junction formed will be short-circuited due to nickel oxide entering the base of the nanorods, which significantly reduces the quality of the pn junction.

The problem to which this invention is directed is to increase the quality of the pn junction.

The problem is solved by a method of producing a heterogeneous pn junction based on zinc oxide nanorods, including the growth of vertically oriented and closed at the base of zinc oxide nanorods on a conductive alloyed silicon substrate by gas phase deposition, followed by the deposition of nickel oxide on them until a continuous layer forms on the tips of the nanorods, the novelty of which is that the deposition of nickel oxide on the zinc oxide nanorods is carried out at an angle to the longitudinal axis of the nanorods zinc oxide, preventing the deposition of nickel oxide in the base of the nanorods.

The most technologically advanced is the deposition of nickel oxide by electron-beam or magnetron methods.

It is optimal to use silicon with a specific resistance of 0.1-0.001 Ohm · cm as doped silicon.

The best results are obtained by observing the ratio of length to diameter of zinc oxide nanorods equal to 10-100.

The highest quality transitions are obtained when nickel oxide is deposited on zinc oxide nanorods at an angle to the longitudinal axis of nanorods of 10-70 °.

The technical result obtained by the method implementation consists in obtaining a perfect pn junction based on components compatible with each other, in which it is not short-circuited.

The following examples illustrate but do not limit the application of the present invention.

Example 1

On a conductive substrate of heavily doped silicon with a resistivity of 0.1 Ω cm, the method of gas phase deposition was used to grow vertically oriented and locked at the base zinc oxide nanorods with a diameter of 100 nm with a ratio of their length to diameter of 40-60. In this case, contact to the nanorods was carried out through the substrate. Then, at an angle to the longitudinal axis of the zinc oxide nanorods, which prevents the deposition of nickel oxide into the base of the nanorods, nickel oxide was deposited by the electron-beam method at approximately 25 ° to form a continuous layer on the tips of the nanorods.

The resulting pn junction was characterized by a high breakdown voltage; no shorting was observed.

Example 2

On a conductive substrate of heavily doped silicon with a specific resistance of 0.001 Ohm cm, gas-phase deposition was used to grow vertically oriented and closed at the base of zinc oxide nanorods with a diameter of 300 nm with a ratio of their length to diameter of 20-30. In this case, contact to the nanorods was carried out through the substrate. Then, at an angle to the longitudinal axis of the zinc oxide nanorods, which prevents the deposition of nickel oxide into the base of the nanorods, nickel oxide was deposited by the electron-beam method at about 30 ° to form a continuous layer at the ends of the nanorods.

The resulting pn junction was characterized by a high breakdown voltage; no shorting was observed.

Example 3

On a conductive substrate of heavily doped silicon with a specific resistance of 0.01 Ohm cm, gas-phase deposition was used to grow vertically oriented and locked at the base zinc oxide nanorods with a diameter of 60 nm with a ratio of their length to diameter of 80-100. In this case, contact to the nanorods was carried out through the substrate. After that, at an angle to the longitudinal axis of the zinc oxide nanorods, which prevents the deposition of nickel oxide into the base of the nanorods, nickel oxide was deposited by the magnetron method at approximately 35 ° to form a continuous layer at the tips of the nanorods.

The resulting pn junction was characterized by a high breakdown voltage; no shorting was observed.

Example 4

On a conductive substrate of heavily doped silicon with a specific resistance of 0.005 Ohm · cm, gas-phase deposition was used to grow vertically oriented and closed at the base of zinc oxide nanorods with a diameter of 400 nm with a ratio of their length to diameter of 10-20. In this case, contact to the nanorods was carried out through the substrate. Then, at an angle to the longitudinal axis of the zinc oxide nanorods, which prevents the deposition of nickel oxide into the base of the nanorods, nickel oxide was deposited by the magnetron method to a continuous layer at the tips of the nanorods by a magnetron method.

The resulting pn junction was characterized by a high breakdown voltage; no shorting was observed.

As can be seen from the above examples, the proposed method allows to obtain perfect p-n junctions based on compatible components with almost 100% yield, which in turn allows you to use them to develop new, more advanced nanodevices.

Claims (5)

1. A method of producing a heterogeneous pn junction based on zinc oxide nanorods, comprising the method of gas phase deposition of vertically oriented and closed at the base of zinc oxide nanorods on a conductive doped silicon substrate, followed by deposition of nickel oxide on them until a continuous layer forms on the tips of the nanorods characterized in that the deposition of nickel oxide on the zinc oxide nanorods is carried out at an angle to the longitudinal axis of the zinc oxide nanorods, preventing the deposition of oxide nickel in the base of nanorods. 2. The method according to claim 1, characterized in that the deposition of Nickel oxide is carried out by electron beam or magnetron method. 3. The method according to claim 1, characterized in that as the doped silicon take silicon with a specific resistance of 0.1-0.001 Ohm · see 4. The method according to claim 1, characterized in that the ratio of length to diameter of the zinc oxide nanorods is 10-100. 5. The method according to claim 1, characterized in that the deposition of nickel oxide on the zinc oxide nanorods is carried out at an angle to the longitudinal axis of the nanorods, comprising 10-70 °.