RU2244984C1 - Heterostructure manufacturing process - Google Patents

Abstract

FIELD: semiconductor engineering; integration of electronic materials in semiconductor, electronic, superconductor, optical, and electrical technologies.

SUBSTANCE: proposed heterostructure manufacturing process that provides for manufacturing crystal films of homogeneous thickness, 10 to 300 nm thick, on amorphous insulator, semiconductor material, and other substrates, including flexible ones, at surface roughness of film about 0.2 - 0.5 nm involves introduction of hydrogen in working wafer, chemical treatment of the latter, joining of working wafer and substrate, splicing and exfoliation of working wafer including transfer of film to heterostructure. Formed in working wafer prior to hydrogen introduction is buried interface to display layer in wafer transferred as film to heterostructure or buried interface with delta-doped layer of impurity or thin layer in the form of impurity compounds also displaying layer in working wafer is formed and transferred as film to heterostructure; upon chemical treatment working wafer and substrate are dried out, then adsorbed substances are removed from and adhesive layer applied to them, working wafer and substrate are spliced and exfoliated with film transferred to heterostructure at temperature keeping hydrogen introduced in working wafer inside its space and affording hydrogen accumulation on buried interface or on delta-doped buried interface, or in the form of impurity compounds, hydrogen being introduced in working wafer through depth greater than or of same order of magnitude as burial depth of buried interface or delta-doped buried interface, or in the form of thin layer of dope compounds.

EFFECT: improved morphology of film transferred to heterostructure.

23 cl, 4 dwg

Description

The invention relates to semiconductor technology and can be used to integrate electronic materials in semiconductor, electronic, superconducting, optical and electrical technologies, to create modern materials of microelectronics, heterostructures with a crystalline layer of metal-metal, metal-semiconductor, semiconductor-semiconductor, semiconductor metal, a semiconductor-insulator, regardless of the structure of the substrate, in particular silicon-on-insulator (SOI) or semiconductor-on-cream structures Research Institute (PNK), for the production of multifunctional devices of microsystem technology, devices based on superconducting materials, spin transistors, modern ultra-large integrated circuits (VLSI), chip systems and other spinotronics, optoelectronics and microelectronics.

. При этом перед имплантацией ионов водорода

в пластину кремния имплантируют ионы B⁺ при комнатной температуре дозой 5×10¹²

5×10¹⁵ см^-2 с энергией 180 кэВ. Последующую имплантацию ионов водорода

проводят дозой 5×10¹⁶ см^-2 с энергией 129 кэВ. Удаляют приповерхностный нарушенный слой с перенесенной пленки в гетероструктуру прецизионной полировкой.A known method of manufacturing a heterostructure (Q. - Y. Tong, R. Scholz, U. Gosele, T. - H. Lee, L. - J. Huang, Y. - L. Chao, TYTan, Appl. Phys. Lett., 72, N1, 1998, p. 49-51), which consists in the fact that hydrogen is introduced into the working plate, the working plate and substrate are chemically treated, the working plate and substrate are joined, spliced and layered to form a heterostructured film, then annealed. Silicon wafers are used as a working plate and substrate. The introduction of hydrogen is carried out by implantation of hydrogen ions

. In this case, before implantation of hydrogen ions

B ⁺ ions are implanted in a silicon wafer at room temperature with a dose of 5 × 10 ¹²

5 × 10 ¹⁵ cm ^-2 with an energy of 180 keV. Subsequent implantation of hydrogen ions

spend a dose of 5 × 10 ¹⁶ cm ^-2 with an energy of 129 keV. The surface disturbed layer is removed from the transferred film into the heterostructure with precision polishing.

The main disadvantage of this method is the unsatisfactory morphology of the transferred film into a heterostructure due to the broader distribution profile of boron impurities in silicon. This method of manufacturing a heterostructure at the stage of transfer of the film to the heterostructure allows only to accelerate the delamination process. Obtaining ultrathin, uniform in thickness films with smooth surfaces in this way is difficult.

через предварительно выращенный тонкий слой окисла кремния дозой (2,5

5)×10¹⁶ см^-2, который после имплантации убирают. Приповерхностный нарушенный слой с перенесенной пленки в гетероструктуру удаляют полировкой или окислением с последующим травлением.The closest set of essential features and purpose to the claimed is a method of manufacturing a heterostructure (RF patent No. 2164719, IPC: H 01 L 21/324), which consists in the fact that hydrogen is introduced into the working plate, the working plate is chemically treated, and the working plate and the substrate is joined, spliced and delaminated by the work plate with transfer of the film to the heterostructure, before the work plate and the substrate are connected, the substrate is also chemically treated, after separation, annealing is performed second heterostructure. The fusion of the working plate and the substrate is carried out at 150-250 ° C for 1-2 hours, the delamination of the working plate is carried out at 350-450 ° C for 0.5-2 hours, and annealing at 1100 ° C for 0.5 -1 hours. Silicon wafers are used as the working plate and the substrate. On a silicon wafer that forms the substrate, thermal silicon oxide with a thickness of 0.2 to 0.5 μm is grown before chemical treatment. The introduction of hydrogen is carried out by ion implantation of hydrogen ions

through a pre-grown thin layer of silicon oxide dose (2.5

5) × 10 ¹⁶ cm ^-2 , which is removed after implantation. The near-surface broken layer from the transferred film to the heterostructure is removed by polishing or oxidation, followed by etching.

The disadvantages of this known method is, firstly, the use of heat treatments of the connected plates at temperatures of 350 ° C and above is accompanied by the release of hydrogen from the bound state and the formation of

hydrogen-containing bubbles distributed in the working plate over the entire implanted area, which, when the working plate is stratified with transfer of the film to the heterostructure, leads to non-uniform thickness transfer over the entire area of the plate and the formation of surface roughness, and secondly, the need for finish polishing also leads to the occurrence of variations in its thickness due to local deflections and the thickness of the substrate.

The technical result of the invention is to improve the morphology of the transferred film into a heterostructure, namely, the possibility of manufacturing uniformly thick crystalline films with a thickness of 10-300 nm on an amorphous insulator, semiconductor material and other substrates, including flexible ones, with a roughness of the film surface of about 0.2- 0.5 nm.

The technical result is achieved by the fact that in the method of manufacturing a heterostructure, which consists in the fact that hydrogen is introduced into the work plate, the work plate is chemically treated, the work plate and substrate are joined, spliced and layered into the work plate with transfer of the film to the heterostructure before hydrogen is introduced into a hidden interface is formed on the working plate, releasing a layer transported as a film into the heterostructure in the working plate, or a hidden interface with delta le is formed After the chemical treatment of the working plate / and the substrate /, the drying of physically adsorbed substances from the surface of the working plate / and the substrate / is carried out sequentially, after removal of the layer of impurity or a thin layer in the form of impurity compounds, which also releases a layer transferred into the heterostructure as a film and applying an adhesive layer, joining, splicing the working plate and the substrate and delaminating the working plate with transfer of the film to the heterostructure at a temperature at which hydrogen introduced into the working th plate, remains inside its volume, gathering at a hidden interface or a hidden interface with a delta-doped impurity layer or a thin layer in the form of impurity compounds, and the depth of hydrogen introduction into the working plate is greater than or the same order as the depth of the hidden boundary a section or a hidden interface with a delta-doped impurity layer or a thin layer in the form of impurity compounds.

In the method, a silicon wafer is used as the working plate, which is the basis of the working plate covered with a layer (s) of crystalline material.

In the method, single crystal, or polycrystalline, or textured material is used as the crystalline material.

In the method, silicon is used as a single crystal or polycrystalline or textured material.

In the method, gallium nitride is used as a single-crystal, or polycrystalline, or textured material.

In the method, niobium is used as a single crystal or polycrystalline or textured material.

In the method, the surface of the working plate is covered with a thin layer of silicon oxide through which hydrogen is introduced and which is removed after the introduction of hydrogen.

In the method, a plate of rigid material is used as a substrate.

In the method, a plate coated with a layer or layers of a material different in its properties from the material of the plate used as a substrate is used as a substrate.

In the method, a semiconductor wafer is used as a substrate.

In the method, a silicon wafer is used as a substrate.

In the method, a silicon wafer coated with a layer of silicon oxide is used as a substrate.

In the method, a quartz plate is used as a substrate.

In the method, a plate of flexible material is used as a substrate.

In the method, a polyimide plate is used as a substrate.

14)×10¹⁴ см^-2 при переносе в гетерострутуру слоя кремния.In the method, boron or carbon with a layer concentration of atoms is used as an impurity (6

14) × 10 ¹⁴ cm ^-2 when transferring a silicon layer to the heterostructure.

In the method, beryllium with a layer concentration of atoms of 6 × 10 ¹⁴ cm ^-2 is used as an impurity when a layer of gallium nitride is transferred to the heterostructure.

In the method, boron with a layer concentration of atoms of 9 × l0 ¹⁴ cm ^-2 is used as an impurity when a niobium layer is transferred to the heterostructure.

дозой (1,5

15)×10¹⁶ cм^-2 и энергией 5÷200 кэВ или осуществляют введение водорода из водородной плазмы.In the method, the introduction of hydrogen into the working plate is carried out by implantation of H ⁺ ions or

dose (1.5

15) × 10 ¹⁶ cm ^-2 and energy 5 ÷ 200 keV or carry out the introduction of hydrogen from hydrogen plasma.

In the method, after delamination of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 300-1100 ° C for 0.5-10 hours.

In the method, after chemical treatment, drying is carried out, removal of physically adsorbed substances from the surface of the working plate / and substrate / and applying an adhesive layer, joining, splicing of the working plate and substrate and delamination of the working plate with transfer of the film to the heterostructure in one stage in vacuum (10 ¹ - 10 ⁴ Pa) or in air, at a temperature of from 80 to 350 ° C, lasting from 0.1 to 100 hours, or after chemical treatment, drying is carried out, removal of physically adsorbed substances from the surface of the working plate / and substrate / and applied adhesion layer, joining, splicing of the working plate and substrate in one stage in vacuum (10 ¹ -10 ⁴ Pa) or in air, at a temperature of 80 to 350 ° C, lasting from 0.1 to 100 hours, and the delamination of the working plate with the transfer of the film to the heterostructure is carried out mechanically.

In the method, a hidden interface is formed in that an epitaxial silicon layer is grown on the surface of the base of the working plate.

In the method, a hidden interface is formed with a delta-doped impurity layer or a thin layer in the form of impurity compounds, so that first a buffer layer is grown on the surface of the base of the working plate with epitaxy, then a delta-doped impurity layer or a thin layer in the form of impurity compounds, then encapsulating layer / and a layer of material transferred together with the encapsulating layer as a film into the heterostructure.

The invention is illustrated by the following description and the accompanying figures. Figure 1 is a diagram of the manufacture of heterostructures for the case when a hidden interface or a hidden interface with a delta-doped impurity layer or a thin layer in the form of impurity compounds is at a depth coinciding with the depth of the implanted hydrogen-containing layer, where 1 is a delta-doped layer impurities in the working plate, 2 - the area of the working plate containing implanted hydrogen, 3 - the base of the working plate, 4 - a layer of silicon oxide in the substrate, 5 - the substrate, 6 - transferred film into the heterostructure; Figure 2 is a diagram of the manufacture of heterostructures for the case when a hidden interface or a hidden interface with a delta-doped impurity layer or a thin layer in the form of impurity compounds is at a depth less than the depth of the hydrogen implanted layer, where 1 is a delta-doped layer impurities in the working plate, 2 - the area of the working plate containing implanted hydrogen, 3 - the base of the working plate, 5 - the substrate, 6 - transferred film into the heterostructure; Figure 3 - image of the surface of the film transferred to the heterostructure of the proposed method, obtained by atomic force microscopy (AFM); Figure 4 - image of the surface of the film transferred to the heterostructure in a known manner, obtained by AFM.

The proposed method is based on the following facts. Firstly, during heat treatments in the temperature range 150-350 ° C, depending on the material used as an impurity, the formation of BH ₂ , CH ₄ , H ₂ molecules occurs, which accumulate in a plane that is a hidden interface between the epitaxial layer and the base of the working the plate on which this layer is grown, forming microbubbles with high pressure, leading to chipping along a hidden interface containing impurity atoms, for example, boron or carbon impurities in the form of a delta-doped layer; on the other hand, defects or impurities B and C on the latent boundary of the epitaxial layer and the surface of the base of the working plate resulting from delta doping and / or partial preservation of the surface superstructure and / or the presence of an adsorption layer are capable of forming bonds with hydrogen or catalytically to form H ₂ molecules, which also reduces the mechanical strength in the plane of the hidden interface, even if the heat treatment temperature used in the process of creating the heterostructure is lower than the above. Secondly, relatively low temperatures of heat treatment and high local concentrations of reaction products due to their low diffusion mobility contribute to the formation of microcracks located mainly coplanar near the interface (hidden interface) of the epitaxial layer and the base of the working plate on which this layer is grown. When stratified by coplanar microcracks, an almost atomically smooth surface forms on the film transferred to the heterostructure.

Consider in more detail the physical basis of the proposed method. In the manufacture of a heterostructure obtained by combining dissimilar plates, one of which contains a thin epitaxial, for example, homoepitaxial, crystalline layer, and thinning of one of them, use the ability to capture atomic (H) and molecular (H ₂ ) hydrogen on a hidden interface between the epitaxial layer and the surface the base of the working plate on which this epitaxial layer is grown, and / or on boron (B) or carbon (C) atoms localized within one or more atomic layers on a hidden interface and,

grown using molecular beam, or gas-phase, or liquid epitaxy. Such atomic layers can be delta-doped boron or carbon layers in group IV semiconductors (C, Si, SiC, Ge), thin layers in the form of boron and carbon compounds in metals (Be, Fe, Cu, Ni, Ti, Nb, V , Zr, Pt, Au, Pd, etc.) and their alloys, either in A ₃ B ₅ semiconductors (in the latter part, Be can be used instead of Ga) or in dielectrics (c-cut Al ₂ O ₃ , LaAlO ₃ , LiNbO ₃ ) and other metal oxides or nitrides, for example with titanium - A _y (M _x Ti _1-x ) _1-y O ₃ , where A and M are metals, or with aluminum - AlN (Q. - Y. Tong. Integration of materials and device research enabled by wafer bonding and layer transfer. Mat. Res. Soc. Symp. Proc., Vol. 681 E, 2001 Materials Research Society). The capture of hydrogen atoms (or other impurities mentioned above) onto boron or carbon atoms by means of adsorption, diffusion, drift and saturation in an electric field during electrolysis, or as in the proposed method by ion implantation, or by means of adsorption from plasma and / or liberation from a bound state in the volume of the working plate by energy exposure (light, radiation, heat), leads to the formation of, respectively, B-H or C-H bonds, which significantly reduce the mechanical and thermal ical strength of the interface layer.

To implement the proposed method, it is necessary to solve three main problems: 1) to obtain a significant supersaturation of introduced hydrogen near a hidden interface; 2) to provide external (spliced) highly perfect surfaces; 3) create internal hydrophobic surfaces in adjacent atomic planes on a hidden interface.

The parameters that determine the amount of surface energy in each case are: the concentration of defects and / or impurities actively interacting with hydrogen (Be, C, B, Al, Ga), temperature and high structural quality of the surfaces. One of the important requirements necessary to ensure 100% energy of the connection of the working plate and the substrate is the maximum possible atomic smoothness and purity of their fused surfaces.

To achieve the required purity, for example, for silicon and its oxides, the standard RCA treatment in silicon technology is used, that is, treatment in a peroxide-ammonia solution, removal of the natural oxide in a solution of hydrofluoric acid and treatment in a peroxide-acid solution with washing of the treated working plate and substrates after each chemical treatment operation in ultrapure deionized water. Prior to splicing the working plate and the substrate, the surfaces were hydrophilized by treatment in ammonia peroxide solutions of different ratios (RCA-1, RCA-2) and, as a result, had a contact angle of contact for silicon and silicon oxide of 0 to 10 °. After hydrophilization to dry and remove excess physically adsorbed substances from the surface, the working plate / and substrate / were placed in a centrifuge and heated to temperatures of 80-300 ° C in air or in a low vacuum chamber, after which they were paired.

30)×10¹⁴ см^-2 атомов бора или углерода, после чего проводят облучение водородом рабочей пластины дозой 1×10¹⁶

2×10¹⁷ см^-2 в зависимости от энергии ионов либо вводят водород в рабочую пластину из плазмы.To obtain a high concentration of active impurity at a hidden interface in the working plate, molecular-beam or gas-phase epitaxy is grown in thin layers heavily doped with an impurity, for example, 0.5-4 monolayers with a concentration of (4

30) × 10 ¹⁴ cm ^-2 atoms of boron or carbon, after which the work plate is irradiated with hydrogen with a dose of 1 × 10 ¹⁶

2 × 10 ¹⁷ cm ^-2 depending on the energy of the ions or introduce hydrogen into the working plate from the plasma.

30)×10¹⁴ см^-2, то величина дозы имплантации составляет 1×10¹⁶

2×10¹⁶ см^-2 при энергии 10 кэВ. Также с достижением этого же результата введение водорода в рабочую пластину можно осуществлять из водородной плазмы. Для этого могут использоваться стандартные промышленные установки плазменного травления и осаждения. При этом глубина проникновения водорода и его концентрация определяются временем выдержки рабочей пластины, давлением при котором через рабочую камеру продувают молекулярный водород (10-100 Па).Internal hydrophobic surfaces in adjacent atomic planes parallel to the surface of the working plate are formed at a hidden interface, that is, on the surface of the base of the working plate adjacent to the epitaxial layer, in the region of the working plate containing implanted hydrogen (Figure 1 and Figure 2). The formation of such surfaces, for example, in the case of silicon, takes place as a result of the formation of bonds in the boundary layer of Si-HH-Si due to the capture of hydrogen onto stretched and weakened Si-Si bonds, which corresponded to the initial (before epitaxy) reconstruction of the surface of the base of the working plate. To form at the depth of the order of the average projective range of R _p ions two hydrophobic (100) planes with 100% Si-HH-Si bonds, it is necessary to provide a dose of H ⁺ ions (with an energy of 20-200 keV) of 3 × 10 ¹⁷ cm ^-2 and higher . However, even at implantation doses of the order of 2.5 × 10 ¹⁵ cm ^-2 (for ions with an energy of 20 keV), microcracks begin to form at the hidden interface due to the presence of defects and impurities (B, C) at this interface. Their presence also determines the weakening of Si – Si bonds in the region containing implanted hydrogen, and this process is characterized by the fact that the binding energies are close to the surface bond energies of the Si – HH – Si hydrophobic planes. Therefore, it is realistic to create two adjacent internal hydrophobic planes that do not require 100% coverage of the internal (100) Si-HH-Si planes with bonds. Based on these ideas, the used doses of hydrogen ions ranged from 2 × 10 ¹⁶ to 1 × 10 ¹⁷ cm ^-2 for ions with an energy of 5-200 keV, respectively. With an increase in the concentration of impurities, this dose can be further reduced. For example, if heavily doped boron layers are formed in the working plate at a depth of 130 nm by molecular beam epitaxy, they contain from 0.5 to 4 monolayers at a concentration of boron atoms (4

30) × 10 ¹⁴ cm ^-2 , then the implantation dose is 1 × 10 ¹⁶

2 × 10 ¹⁶ cm ^-2 at an energy of 10 keV. Also, with the achievement of the same result, the introduction of hydrogen into the working plate can be carried out from hydrogen plasma. For this, standard industrial plasma etching and deposition plants can be used. In this case, the hydrogen penetration depth and its concentration are determined by the exposure time of the working plate, at which molecular hydrogen (10-100 Pa) is blown through the working chamber.

Based on the above physical concepts, the achievement of a technical result in a method for manufacturing a heterostructure is possible by implementing the following steps.

1. A hidden interface is formed in the working plate, separating the layer transferred into the heterostructure as a film in the working plate, or a hidden interface is formed with a delta-doped impurity layer or a thin layer in the form of impurity compounds, which also releases the transferred layer in the working plate as a film into a heterostructure. As the working plate, a silicon plate is used, which is the basis of the working plate, coated with a layer (s) of crystalline material, which is a single crystal, or a polycrystal, or a textured material. The formation of a hidden interface separating the layer transported as a film into the heterostructure in the working plate is carried out by the fact that an epitaxial silicon layer (in particular, molecular beam epitaxy) is grown on the surface of the base of the silicon working plate, which is portable as films into a heterostructure. The formation of a hidden interface with a delta-doped impurity layer, which also releases a layer transferred into the heterostructure as a film in the working plate, is carried out by the fact that an silicon epitaxial buffer layer is grown on the base surface of the silicon working plate, then a thin layer of impurity, boron or carbon followed by a silicon layer transferred as a film to the heterostructure. The formation of a hidden interface with a thin layer in the form of impurity compounds, also releasing a layer transferred into the heterostructure as a film in the working plate, is carried out by the fact that an epitaxial buffer layer of gallium or niobium is grown on the surface of the base of the working plate from silicon, then a thin layer impurities of beryllium or boron, respectively, after which the layer transferred as a film to the heterostructure, gallium nitride or niobium, respectively. The surface of the working plate is covered with a thin layer of silicon oxide, through which hydrogen is introduced, and which is removed after the introduction of hydrogen.

15)×10¹⁶ см^-2. При введении водорода в рабочую пластину из плазмы давление в рабочей камере, через которую продувают молекулярный водород, поддерживают 10-100 Па, а время выдержки рабочей пластины составляет от 0,5 до 5 часов при температуре от 150 до 250°С.2. By means of ion implantation or from hydrogen plasma, hydrogen is introduced into the working plate. Moreover, the depth of hydrogen introduction into the working plate of the same order (± 300 nm) as the depth of the hidden interface or the hidden interface with the delta-doped layer or a thin layer in the form of impurity compounds, or more. The energy of implanted ions is 5-200 keV, depending on the thickness of the layer carried as a film into the heterostructure. The doses required for stratification of the working plate and transfer of the film to the heterostructure are (1.5

15) × 10 ¹⁶ cm ^-2 . When hydrogen is introduced into the working plate from the plasma, the pressure in the working chamber through which molecular hydrogen is blown is maintained at 10-100 Pa, and the holding time of the working plate is from 0.5 to 5 hours at a temperature of from 150 to 250 ° C.

3. After introducing hydrogen into the working plate, chemical treatment is carried out. If in the subsequent work plate and substrate are spliced directly, that is, by direct connection (bonding), then chemical processing of the work plate and substrate is carried out. In this case, their surfaces are cleaned and hydrophilized, for example, for a silicon wafer or a wafer with a surface coated with a thin layer of silicon oxide and a substrate, which is a silicon wafer coated with a layer of silicon oxide or a quartz plate in RCA-1 solutions. RCA-2 and washing in deionized water to obtain hydrophobic surfaces carry out an additional final exposure in a solution of hydrofluoric acid. If subsequently the working plate and the substrate are spliced by means of an intermediate adhesive layer, that is, by “gluing”, then the chemical treatment of the working plate is carried out in the same manner as in the case of bonding.

4. After chemical treatment, drying is carried out sequentially, removal of physically adsorbed substances from the surface of the working plate / and substrate / and applying an adhesive layer, joining, splicing of the working plate / and substrate / and the separation of the working plate with transfer of the film to the heterostructure in one stage at a temperature, in which hydrogen introduced into the working plate remains inside its volume, collecting at a hidden interface, or a hidden interface with a delta-doped impurity layer or a thin layer in the form of a compound rd impurities. This stage, which is a sequence of operations, is carried out in air or in vacuum (10 ¹ -10 ⁴ Pa), at a temperature of from 80 to 350 ° C for a duration of 100 to 0.1 hours, respectively. The operation of delamination of the working plate with the transfer of the film to the heterostructure is performed in the same stage or after the fusion of the working plate and the substrate is carried out mechanically. In the case of bonding, drying is carried out, removal of physically adsorbed substances from the surface of the working plate and substrate. In the case when the working plate and the substrate are spliced by means of an intermediate adhesive layer, drying is carried out sequentially, the physically adsorbed substances are removed from the surface of the working plate and the adhesive layer is applied to the fused surfaces of the working plate and substrate. As the substrate, use is made of a plate made of a rigid material, for example, a semiconductor, in particular silicon, coated with a layer of silicon oxide, or a quartz plate, and a plate of a flexible material, for example, polyimide.

5. The final annealing of the heterostructure at 300-1150 ° C for 0.5-10 hours, respectively, is performed to increase the coalescence force between the transferred layer into the heterostructure and the substrate to values equal to the breakdown energy of the bulk material, and also to remove from the transferred layer into the heterostructure of residual radiation defects and hydrogen. Moreover, a lower annealing temperature corresponds to a longer time and vice versa. In some cases, when annealing is carried out at minimum values of the indicated temperature range, it is possible to combine this stage with the previous one.

Thus, the main difference of the proposed method for manufacturing heterostructures by the method of hydrogen-induced transfer is that hydrogen-induced cleavage (separation) is carried out along the hidden interface of the epitaxial layer and the base of the working plate, which is enriched in impurities and / or defects actively interacting with the introduced hydrogen, which allows to reduce the thickness of the transferred crystalline layer and provides a decrease in the surface roughness of the heterostructure.

As information confirming the possibility of implementing the proposed method, we give the following examples.

Example 1

A hidden interface is formed in the working plate, separating the layer transferred into the heterostructure as a film in the working plate, namely, a 260 nm thick silicon layer is grown by molecular beam epitaxy on the surface of a silicon plate (FIG. 1).

с энергией 40 кэВ и дозой 2,5×l0¹⁶ cм^-2. При этом область рабочей пластины, подвергшаяся имплантации, характеризуется

=290 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=260 нм (Фиг.1).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 40 keV and a dose of 2.5 × l0 ¹⁶ cm ^-2 . Moreover, the area of the working plate that underwent implantation is characterized by

= 290 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 260 nm (Figure 1).

As the substrate using a silicon plate coated with a layer of silicon oxide with a thickness of 0.1 μm (Figure 1).

Chemical treatment of the working plate and the substrate is carried out. The natural oxide is sequentially removed in a hydrofluoric acid solution, purified and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution of the ratio NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5-1: 2: 7 and HCl: H ₂ O ₂ : H ₂ O = 1: 1: 6-1: 2: 8 (RCA-1 and RCA-2, respectively). After each chemical treatment operation, the plate and substrate are washed in deionized water.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in vacuum (10 Pa) at a temperature of 250 ° C for 60 s, then they are joined, spliced and layered by a working plate at a hidden interface at a temperature of 350 ° C for 30 hours .

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a structure of 0.26 μm Si / 0.1 μm SiO ₂ / Si with a root mean square roughness of the surface of the silicon layer of 0.4 nm, while when transferring the layer of bulk silicon, this value is about 10 nm (Figure 4).

Example 2

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then, at a temperature of 400 ° C, a thin layer of boron impurity with a layer concentration of atoms of 6 × 10 ¹⁴ cm ^-2 , on top of which an encapsulating layer of silicon is grown at the same temperature with a thickness of 10 nm, then the temperature is increased to 700 ° C and growing a silicon layer with a thickness of 240 nm, transferred together with encapsulating as a film in the heterostructure (Figure 2).

с энергией 40 кэВ и дозой 2,5×l0^l6 cм^-2. При этом область рабочей пластины, подвергшаяся имплантации, характеризуется

=290 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=260 нм (Фиг.2).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 40 keV and a dose of 2.5 × l0 ^l6 cm ^-2 . Moreover, the area of the working plate that underwent implantation is characterized by

= 290 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 260 nm (Figure 2).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2, соответственно). После каждой операции химической обработки следует промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. The natural oxide is sequentially removed in a hydrofluoric acid solution, purified and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively). After each chemical treatment operation, the plate and substrate are washed in deionized water.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in vacuum (200 Pa) at a temperature of 250 ° C for 60 s, then they are joined, spliced and layered on a working plate at a hidden interface with a layer of boron impurity at a temperature of 250 ° C within 30 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a structure of 0.25 μm Si / 0.5 μm SiO ₂ / Si with a root mean square roughness of the silicon layer surface of 0.2 nm (FIG. 3), whereas when transferring a layer of bulk silicon, this value is about 10 nm (FIG. .4).

Example 3

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, on the surface of a silicon wafer, a 10 nm thick silicon layer is grown by molecular beam epitaxy at a temperature of 700 ° C. then at 400 ° C thin layer of boron impurity atoms with a concentration of the layer 15 × 10 ¹⁴ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature of 10 nm thickness, carried as a film heteras structure then increase the temperature to 700 ° C and a gas phase epitaxy is grown a thin silicon oxide layer 40 nm thick, which after the introduction of hydrogen removed (Figure 1).

=10 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=9 нм (Фиг.1).After that, hydrogen is introduced into the working plate, namely, the implantation of hydrogen ions H ⁺ with an energy of 10 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 is carried out. Moreover, the area of the working plate that underwent implantation is characterized by

= 10 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 9 nm (Figure 1).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:H₂О₂:H₂О=1:1:6

1:2:8 (RСА-1 и RCA-2, соответственно) рабочей пластины и подложки. После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. The silicon oxide is sequentially removed from the working plate in a hydrofluoric acid solution, cleaned and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate and substrate. After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in vacuum (200 Pa) at a temperature of 250 ° C for 60 s, then they are joined, spliced and layered on a working plate at a hidden interface with a layer of boron impurity at a temperature of 250 ° C within 30 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a structure of 10 nm Si / 0.5 μm SiO ₂ / Si with a root mean square roughness of the surface of the silicon layer of 0.2 nm, whereas when transferring a layer of bulk silicon, this value is about 10 nm (Figure 4).

Example 4

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at a temperature of 400 ° C a thin layer of carbon impurity atoms with a concentration of the layered 1,2 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature of 10 nm thickness, and then raising the temperature d 700 ° C and grown silicon layer 240 nm thick film as carried in the heterostructure (Figure 2).

с энергией 40 кэВ и дозой 1,5×10¹⁶ см^-2. При этом область рабочей пластины, подвергшаяся имплантации, характеризуется

=290 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=260 нм (Фиг.2).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 40 keV and a dose of 1.5 × 10 ¹⁶ cm ^-2 . Moreover, the area of the working plate that underwent implantation is characterized by

= 290 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 260 nm (Figure 2).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2, соответственно) рабочей пластины и подложки. После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. The natural oxide is sequentially removed in a hydrofluoric acid solution, purified and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate and substrate. After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in air at a temperature of 150 ° C for 500 s, then they are joined, spliced and layered on a working plate at a hidden interface with a layer of carbon impurity in air at a temperature of 250 ° C for 30 hours

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 30 minutes.

The result is a structure of 0.25 μm Si / 0.5 μm SiO ₂ / Si with a root mean square surface roughness of the silicon layer of less than 0.4 nm, whereas when transferring a layer of bulk silicon, this value is about 10 nm (Figure 4) .

Example 5

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at 400 ° C thin layer of boron impurity atoms with a concentration of the layered 1,4 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature of 10 nm thickness, and then increase the temperature to 700 ° and grown silicon layer was 240 nm thick as a portable film heterostructure (Figure 2).

с энергией 40 кэВ и дозой 2×10¹⁶ см^-2.After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 40 keV and a dose of 2 × 10 ¹⁶ cm ^-2 .

290 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=260 нм (Фиг.2).Moreover, the area of the working plate that underwent implantation is characterized by

290 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 260 nm (Figure 2).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2, соответственно). После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. The natural oxide is sequentially removed in a hydrofluoric acid solution, purified and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively). After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and the substrate are dried, physically adsorbed substances are removed from the surface in air, then they are combined, spliced at a temperature of 200 ° C for 2 hours in air.

The working plate is layered along a hidden interface with a layer of boron impurity at room temperature mechanically, with a blade.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a structure of 0.25 μm Si / 0.5 μm SiO ₂ / Si with a root mean square surface roughness of the silicon layer of less than 0.4 nm, while when transferred from bulk silicon, this value is about 10 nm (Figure 4).

Example 6

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at 400 ° C thin layer of boron impurity atoms with a concentration of the layered 1,2 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature 10 nm thick film as a portable Goethe ostrukturu, then increase the temperature to 700 ° C and grown silicon oxide layer 40 nm thick, which after the introduction of hydrogen into the operating plate is removed (2).

с энергией 20 кэВ и дозой 2×l0¹⁶ cм^-2. При этом область рабочей пластины, подвергшаяся имплантации, характеризуется

=90 нм - проективньм пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=60 нм (Фиг.2).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 20 keV and a dose of 2 × l0 ¹⁶ cm ^-2 . Moreover, the area of the working plate that underwent implantation is characterized by

= 90 nm - projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 60 nm (Figure 2).

A quartz plate is used as a substrate.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины и подложки. После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. Silicon oxide is sequentially removed in a hydrofluoric acid solution from the working plate, cleaned and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate and substrate. After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in air, then they are joined, spliced and the working plate is delimited along a hidden interface with a delta-doped layer of boron impurity at a temperature of 250 ° C for 30 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a 10 nm Si / quartz structure with a root mean square roughness of the silicon layer surface of less than 0.2 nm.

Example 7

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at 400 ° C thin layer of boron impurity atoms with a concentration of the layered 1,2 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature 10 nm thick film as a portable Goethe ostrukturu, then increase the temperature to 700 ° C and grown silicon oxide layer 40 nm thick, which after the introduction of hydrogen is removed in a working plate (2).

с энергией 20 кэВ и дозой 2×l0¹⁶ cм^-2. При этом область рабочей пластины, подвергшаяся имплантации, характеризуется

=90 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=60 нм (Фиг.2).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 20 keV and a dose of 2 × l0 ¹⁶ cm ^-2 . Moreover, the area of the working plate that underwent implantation is characterized by

= 90 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 60 nm (Figure 2).

A flexible polyimide plate 200 μm thick is used as a substrate.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины. После каждой операции химической обработки следовала промывка рабочей пластины в деионизованной воде. Затем рабочую пластину подвергают обработке в растворе плавиковой кислоты для гидрофобизации поверхности.Chemical treatment of the working plate is carried out. Silicon oxide is successively removed in a hydrofluoric acid solution from the working plate, and the NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5 ratio is purified in a peroxide-ammonia solution and in a peroxide-acid solution.

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate. After each chemical treatment operation, a washing plate was washed in deionized water. Then the working plate is subjected to processing in a solution of hydrofluoric acid to hydrophobize the surface.

The working plate is dried, physically adsorbed substances are removed from the surface in air. Apply on the surface of the working plate and the substrate an adhesive layer “Super-adhesive®” with a thickness of about 1 μm. Then the working plate and the substrate are connected, spliced and layered working plate at a hidden border with a delta-doped layer of boron impurity at a temperature of 250 ° C for 30 hours in air.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

As a result, a structure of 10 nm Si / 2 μm adhesive layer / 200 μm flexible polyimide film with a mean square surface roughness of the silicon layer of less than 0.2 nm is obtained.

Example 8

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at 400 ° C thin layer of boron impurity atoms with a concentration of the layered 1,2 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature 10 nm thick film as a portable Goethe ostrukturu, then increase the temperature to 700 ° C and grown silicon oxide layer 40 nm thick, which after the introduction of hydrogen into the working plate is removed (Figure 1).

After that, hydrogen is introduced into the working plate, namely, hydrogen is saturated from hydrogen plasma at a substrate temperature of 150 ° C for 5 hours.

A flexible polyimide plate 200 μm thick is used as a substrate.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины. После каждой операции химической обработки следовала промывка рабочей пластины в деионизованной воде. Затем рабочую пластину подвергают обработке в растворе плавиковой кислоты для гидрофобизации поверхности.Chemical treatment of the working plate is carried out. Silicon oxide is successively removed in a hydrofluoric acid solution from the working plate, and the NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5 ratio is purified in a peroxide-ammonia solution and in a peroxide-acid solution.

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate. After each chemical treatment operation, a washing plate was washed in deionized water. Then the working plate is subjected to processing in a solution of hydrofluoric acid to hydrophobize the surface.

The working plate is dried, physically adsorbed substances are removed from the surface in air. Apply on the surface of the working plate and the substrate an adhesive layer “Super-adhesive®” with a thickness of about 1 μm. Then the working plate and the substrate are connected, spliced and layered working plate at a hidden border with a delta-doped layer of boron impurity at a temperature of 250 ° C for 30 hours in air.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

As a result, a structure of 10 nm Si / 2 μm adhesive layer / 200 μm flexible polyimide film with a mean square surface roughness of the silicon layer of less than 0.2 nm is obtained.

Example 9

A hidden interface with a delta-doped impurity layer is formed in the working plate, which separates the layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of silicon 100 nm thick is grown by molecular beam epitaxy at a temperature of 700 ° C, then at 400 ° C thin layer of boron impurity atoms with a concentration of the layered 1,2 × 10 ¹⁵ cm ^-2, which is grown on top encapsulating layer of silicon at the same temperature 10 nm thick film as a portable Goethe ostrukturu, then increase the temperature to 700 ° C and grown silicon oxide layer 40 nm thick, which after the introduction of hydrogen into the operating plate is removed (Figure 1).

After that, hydrogen is introduced into the working plate, namely, hydrogen is saturated from hydrogen plasma at a substrate temperature of 250 ° C for 30 minutes.

A flexible polyimide plate 200 μm thick is used as a substrate.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины. После каждой операции химической обработки следовала промывка рабочей пластины в деионизованной воде. Затем рабочую пластину подвергают обработке в растворе плавиковой кислоты для гидрофобизации поверхности.Chemical treatment of the working plate is carried out. Silicon oxide is successively removed in a hydrofluoric acid solution from the working plate, and the NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5 ratio is purified in a peroxide-ammonia solution and in a peroxide-acid solution.

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate. After each chemical treatment operation, a washing plate was washed in deionized water. Then the working plate is subjected to processing in a solution of hydrofluoric acid to hydrophobize the surface.

The working plate is dried, physically adsorbed substances are removed from the surface in air. Apply on the surface of the working plate and the substrate an adhesive layer “Super-adhesive®” with a thickness of about 1 μm. Then the working plate and the substrate are connected, spliced and layered working plate at a hidden border with a delta-doped layer of boron impurity at a temperature of 250 ° C for 30 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

As a result, a structure of 10 nm Si / 2 μm adhesive layer / 200 μm flexible polyimide film with a mean square surface roughness of the silicon layer of less than 0.2 nm is obtained.

Example 10

A hidden interface with a thin layer in the form of impurity compounds is formed in the working plate, releasing a layer transferred into the heterostructure as a film in the working plate, namely, a GaN buffer layer 100 nm thick is grown on the surface of a silicon plate by molecular beam epitaxy at a temperature of 700 ° C. then at a temperature of 400 ° C a thin layer with the layer of beryllium impurity atoms concentration 6 × 10 ¹⁴ cm ^-2, which is grown on top encapsulating layer of gallium nitride at the same temperature of 10 nm thickness, carried as a prisoner and a heterostructure, then increase the temperature to 700 ° C and grown silicon oxide layer 40 nm thick, which after the introduction of hydrogen into the operating plate is removed (Figure 1).

с энергией 12 кэВ и дозой 2,5×l0¹⁶ cм^-2. При этом область рабочей пластины, подвергшаяся имплантации, область нитрида галлия, характеризуется

=10 нм - проективным пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=8 нм (Фиг.1) в GaN за слоем окисла кремния (Фиг.1).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 12 keV and a dose of 2.5 × l0 ¹⁶ cm ^-2 . In this case, the area of the working plate that underwent implantation, the region of gallium nitride, is characterized by

= 10 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 8 nm (Figure 1) in GaN behind a layer of silicon oxide (Figure 1).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины и подложки. После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. Silicon oxide is sequentially removed in a hydrofluoric acid solution from the working plate, cleaned and hydrophilized, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate and substrate. After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in vacuum (200 Pa) at a temperature of 250 ° C for 60 s, then they are joined, spliced and layered on the working plate at a hidden interface with a thin layer in the form of beryllium impurity compounds at 350 ° C for 10 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 1100 ° C for 45 minutes.

The result is a structure of 10 nm GaN / 0.5 μm SiO ₂ / Si with a root mean square surface roughness of 0.2 nm.

Example 11

A hidden interface with a thin layer in the form of impurity compounds is formed in the working plate, releasing a layer transferred into the heterostructure as a film in the working plate, namely, a buffer layer of polycrystalline niobium with a thickness of 100 is grown on the surface of a silicon wafer by molecular beam epitaxy at a temperature of 700 ° C. nm, then at a temperature of 400 ° C a thin layer of boron impurity with a layer concentration of atoms of 9 × 10 ¹⁴ cm ^-2 , on top of which an encapsulating layer of textured niobium is grown at the same temperature with a thickness 10 nm, transferred as a film to the heterostructure, then the temperature is increased to 700 ° C and a 40-nm-thick layer of silicon oxide is grown by gas-phase epitaxy, which is removed after the introduction of hydrogen into the working plate (Figure 1).

с энергией 12 кэВ и дозой 2,5×10¹⁶ см^-2. При этом область рабочей пластины, подвергшаяся имплантации, область ниобия, характеризуется

=10 нм - проективньм пробегом ионов водорода и максимумом распределения радиационных дефектов - R_d=8 нм (Фиг.1) в ниобии за слоем окисла кремния (Фиг.1).After that, hydrogen is introduced into the working plate, namely, hydrogen ions are implanted

with an energy of 12 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . In this case, the area of the working plate that underwent implantation, the niobium region, is characterized

= 10 nm - the projective range of hydrogen ions and the maximum distribution of radiation defects - R _d = 8 nm (Figure 1) in niobium behind a layer of silicon oxide (Figure 1).

As a substrate, a silicon wafer coated with a layer of silicon oxide with a thickness of 0.5 μm is used.

1:2:7 и НСl:Н₂O₂:Н₂O=1:1:6

1:2:8 (RСА-1 и RCA-2 соответственно) рабочей пластины и подложки. После каждой операции химической обработки следовала промывка рабочей пластины и подложки в деионизованной воде.Chemical treatment of the working plate and the substrate is carried out. The silicon oxide is sequentially removed from the surface of the niobium of the working plate in a solution of hydrofluoric acid, cleaning and hydrophilization, respectively, in a peroxide-ammonia solution and in a peroxide-acid solution, the ratios NH ₄ OH: H ₂ O: H ₂ O = 1: 1: 5

1: 2: 7 and Hcl: H ₂ O ₂ : H ₂ O = 1: 1: 6

1: 2: 8 (RCA-1 and RCA-2, respectively) of the working plate and substrate. After each chemical treatment operation, washing of the working plate and substrate in deionized water followed.

The working plate and substrate are dried, physically adsorbed substances are removed from the surface in vacuum (10 ⁴ Pa) at a temperature of 250 ° C for 60 s, then they are joined, spliced and the working plate is stratified along a hidden interface with a thin layer of boron impurity compounds at a temperature 350 ° C for 10 hours.

Then, after separation of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 700 ° C for 45 minutes.

As a result, a 10 nm Nb / 0.5 μm SiO ₂ / Si crystalline layer structure is obtained with a root mean square roughness of Nb 0.2 nm.

Thus, the proposed method of manufacturing a heterostructure with crystalline films, based on the hydrogen-induced transfer of a thin crystalline film from a work plate subjected to hydrogen saturation, in combination with the stimulation of this saturation by an impurity present at the boundary of the epitaxial layer with the volume of the work plate, when formed in the region this boundary of a given coplanar occurrence of a layer of microcavities or microcracks, allows to obtain, in comparison with the known technical solutions s, ultra thin (10 nm) films with virtually atomically smooth surface.

Claims (23)

1. A method of manufacturing a heterostructure, which consists in the fact that hydrogen is introduced into the work plate, the work plate is chemically treated, the work plate and substrate are joined, spliced and delaminate the work plate with film transfer to the heterostructure, characterized in that before hydrogen is introduced into the work plate a hidden interface is formed in the wafer, releasing a layer transferred into the heterostructure as a film in the working wafer, or a hidden interface with a delta-doped layer of and or with a thin layer in the form of impurity compounds, which also releases a layer transferred into the heterostructure as a film in the working plate, after chemical treatment of the working plate (and substrate), drying is carried out sequentially, removal of physically adsorbed substances from the surface of the working plate (and substrate), and deposition adhesion layer, bonding, fusion of the working plate and the substrate, and delamination of the working plate with transfer of the film to the heterostructure at a temperature at which the hydrogen introduced into the working plate remains in wipe its volume, gathering at a hidden interface or a hidden interface with a delta-doped impurity layer or a thin layer in the form of impurity compounds, and the depth of hydrogen introduction into the working plate is greater than or the same order as the depth of the hidden interface or hidden border section with a delta-doped impurity layer or a thin layer in the form of impurity compounds. 2. The method according to claim 1, characterized in that as the working plate use a silicon plate, which is the basis of the working plate, covered with a layer / layers of crystalline material. 3. The method according to claim 2, characterized in that as the crystalline material using single-crystal, or polycrystalline, or textured material. 4. The method according to claim 3, characterized in that silicon is used as a single-crystal, or polycrystalline, or textured material. 5. The method according to claim 3, characterized in that gallium nitride is used as a single-crystal, or polycrystalline, or textured material. 6. The method according to claim 3, characterized in that niobium is used as a single-crystal, or polycrystalline, or textured material. 7. The method according to any one of claims 1 to 6, characterized in that the surface of the working plate is covered with a thin layer of silicon oxide through which hydrogen is introduced and which is removed after the introduction of hydrogen. 8. The method according to any one of claims 1 to 7, characterized in that a plate of rigid material is used as a substrate. 9. The method according to any one of claims 1 to 8, characterized in that the substrate is a plate coated with a layer or layers of a material different in its properties from the material of the plate used as the substrate. 10. The method according to any one of paragraphs. 1-9, characterized in that as the substrate using a wafer of semiconductor. 11. The method according to any one of claims 1 to 10, characterized in that a silicon wafer is used as the substrate. 12. The method according to any one of claims 1 to 11, characterized in that a silicon wafer coated with a layer of silicon oxide is used as a substrate. 13. The method according to any one of claims 1 to 8, characterized in that a quartz plate is used as a substrate. 14. The method according to any one of claims 1 to 7, characterized in that a plate of flexible material is used as a substrate. 15. The method according to 14, characterized in that as the substrate use a plate of polyimide. 16. The method according to any one of claims 1 to 4 or 7-15, characterized in that boron or carbon with a layer concentration of atoms (6 ÷ 14) × 10 ¹⁴ cm ^-2 are used as an impurity when a silicon layer is transferred to the heterostructure. 17. The method according to any one of claims 1 to 3, or 5, or 7-15, characterized in that beryllium with a layer concentration of atoms of 6 × 10 ¹⁴ cm ^-2 is used as an impurity when a layer of gallium nitride is transferred to the heterostructure. 18. The method according to any one of claims 1 to 3 or 6-15, characterized in that boron with a layer concentration of atoms of 9 × 10 ¹⁴ cm ^-2 is used as an impurity when a niobium layer is transferred to the heterostructure. 19. The method according to any one of claims 1 to 18, characterized in that the introduction of hydrogen into the working plate is carried out by implantation of H ions $\genfrac{}{}{0ex}{}{\text{+}}{\text{2}}$ or H ⁺ dose (1.5 ÷ 15) × 10 ¹⁶ cm ^-2 and energy 5 ÷ 200 keV or the introduction of hydrogen is carried out from hydrogen plasma. 20. The method according to any one of claims 1 to 19, characterized in that after the delamination of the working plate with transfer of the film to the heterostructure, annealing is carried out at a temperature of 300 ÷ 1100 ° C for 0.5-10 hours 21. The method according to any one of claims 1 to 20, characterized in that after chemical treatment, drying is carried out, the physically adsorbed substances are removed from the surface of the working plate (and substrate) and the adhesive layer is applied, bonding, splicing of the working plate and substrate and delamination of the working plate with the transfer of the film to the heterostructure, it is carried out in one stage in vacuum (10 ¹ ÷ 10 ⁴ Pa) or in air at a temperature of from 80 to 350 ° C, lasting from 0.1 to 100 hours, or after chemical treatment, drying, removal of physically adsorbed substances with turn the characteristics of the working plate (and the substrate) and applying the adhesive layer, joining, splicing the working plate and the substrate in one step in vacuum (10 ¹ ÷ 10 ⁴ Pa) or in air, at a temperature of 80 to 350 ° C, lasting from 0.1 up to 100 hours, and the separation of the working plate with the transfer of the film into the heterostructure is carried out mechanically. 22. The method according to any one of claims 1 to 21, characterized in that a hidden interface is formed in that an epitaxial silicon layer is grown on the surface of the base of the working plate. 23. The method according to any one of claims 1 to 21, characterized in that a hidden interface is formed with a delta-doped impurity layer or a thin layer in the form of impurity compounds so that first a buffer layer is grown on the surface of the base of the working plate with epitaxy, then delta a doped impurity layer or a thin layer in the form of impurity compounds, then an encapsulating layer / and a layer of material transferred together with the encapsulating layer as a film to the heterostructure.

Images