RU210269U1 - THERMOELECTRIC ELEMENT - Google Patents

Abstract

The utility model relates to the field of thermoelectric devices and can be used as a thermoelectric element used in thermoelectric cooling modules or in thermoelectric generators, which are mainly operated under conditions of multiple thermal cycling. The technical result of the claimed utility model is to increase the service life of the thermoelectric element. The thermoelectric element contains semiconductor branches of n- and p-types of conductivity interconnected by metal busbars into an electrical circuit, while between the semiconductor branches of n- and p-types of conductivity and the metal busbars there is an aluminum layer, the thickness of which is 80-200 μm. 2 w.p. f-ly, 3 ill.

Description

FIELD OF TECHNOLOGY

The utility model relates to the field of thermoelectric devices and can be used as a thermoelectric element used in thermoelectric cooling modules or in thermoelectric generators, which are mainly operated under conditions of multiple thermal cycling.

BACKGROUND OF THE INVENTION

The prior art thermoelectric element (FC), disclosed in RU 51288 U1, publ. 01/27/2006, prototype. The fuel cell used in thermoelectric cooling modules contains semiconductor branches of n- and p-type conductivity, connected by switching buses, which are connected to the cooling and heat-removing heat exchange plates, respectively, characterized in that each of the switching buses located on at least one of the heat exchange plates, attached to it by means of a heat-contact connection, made in the form of a layer of elastic adhesive compound.

The disadvantage of the FC disclosed above is the low thermal conductivity of the known adhesive heat-conducting compounds, which reduces the speed of temperature fronts in cyclic applications and introduces parasitic thermal resistance in static FC applications, reducing their efficiency.

In addition, the TE disclosed in RU 51288 U1, publ. 01/27/2006, prototype. FC used in thermoelectric cooling modules contains a matrix of thermoelectric pairs, each of which is formed by a semiconductor material of n- and p-types of conductivity, electrically connected to each other in a series using switching buses and located in the form of a sandwich structure between two heat-conducting plates. In this case, between the switching busbars and the heat-conducting plate, an adhesive layer of an organometallic compound is located on the side of the switching busbar and a layer of silicone-based material.

The disadvantage of the FC disclosed above is the low thermal conductivity of the known adhesive heat-conducting compounds, which reduces the speed of temperature fronts in cyclic applications and introduces parasitic thermal resistance in static FC applications, reducing their efficiency.

DISCLOSURE OF UTILITY MODEL

The objective of the claimed utility model is to develop a thermoelectric module with an extended service life.

The technical result of the claimed utility model is to increase the service life of the thermoelectric element.

The specified technical result is achieved due to the fact that the fuel cell contains semiconductor branches of n- and p-types of conductivity, interconnected by metal tires in an electrical circuit, while an aluminum layer is located between the semiconductor branches of n- and p-types of conductivity and metal tires.

The thickness of the aluminum layer is 80-200 microns.

Between the semiconductor branches of n- and p-types of conductivity and the aluminum layer there is an adhesive metal layer in the form of at least one metal selected from the group: Mo, V, Cr, Ni or Ni-Sn intermetallic compound.

A layer of soldering metal is applied over the aluminum layer, selected from the group: Ni, Cu.

BRIEF DESCRIPTION OF THE DRAWINGS

The utility model will be better understood from the description, which is not restrictive and given with reference to the accompanying drawings, which show:

Fig. 1 - Design of thermoelectric element (option 1).

Fig. 2 - Design of thermoelectric element (option 2).

Fig. 3 - Design of thermoelectric element (option 3).

1 - semiconductor branch of n-type conductivity; 2 - semiconductor branch of p-type conductivity; 3 - adhesive metal layer; 4 - aluminum layer; 5 - metal tire, 6 - solder metal layer.

IMPLEMENTATION OF UTILITY MODEL

FC containing semiconductor branches of n- and p-types of conductivity interconnected by metal tires (5) into an electrical circuit, while between the semiconductor branches (1, 2) of n- and p-types of conductivity and metal tires (5) there is an aluminum layer (4).

The thickness of the aluminum layer (4) is 80-200 µm. The thickness of the aluminum layer to ensure the removal of mechanical stress due to the plastic properties of aluminum. Given the large value of the thermal expansion coefficient of aluminum (about 20×10 ^-3 1/deg) in comparison with the most used thermoelectric materials of the Bi2Te3 - Bi2Se3-Sb2Te3 or PbTe system, the difference developed by the thermoelectric element is up to 70 C, the specified interval of the layer thickness was experimentally established, not leading to peeling of the aluminum layer or loss of ductility.

Between the semiconductor branches (1,2) of n- and p-types of conductivity and the aluminum layer (4) there is an adhesive metal layer (3) in the form of at least one metal selected from the group: Mo, V, Cr, Ni or an intermetallic compound Ni -Sn.

Declared FC is produced as follows.

A layer of aluminum (4) with a thickness of 80-200 microns is applied to the washer of the n-type semiconductor material by the gas-dynamic method or by the plasma method. Then by soldering on a layer of aluminum (4). If necessary, an adhesive metal layer (3) in the form of at least one metal selected from the group: Mo, V, Cr, Ni or intermetallic Ni-Sn compound, which ensures good adhesion of this layer to the semiconductor. After these operations, the puck is cut into branches of the n-type semiconductor material (1). Similarly, branches of p-type semiconductor material (1) are obtained. Next, the required number of n-type and p-type semiconductor legs with the above layers deposited on them is taken, and by soldering the aluminum layer is connected to metal tires (5) to form a thermoelectric element.

If soldering is carried out with solders that are not suitable for aluminum soldering, then to ensure further switching of metal tires (5), a layer (6) of soldering metal (for example, Ni, Cu) is applied over the aluminum layer (4) in the same ways as the adhesive metal layer (3).

The principle of operation of the claimed FC is that a constant voltage is applied to the metal tires (5) of the FC. When the current passes through the semiconductor branches (1,2) of n- and p-types of conductivity (in the case of the use of fuel cells in thermoelectric cooling modules), a certain amount of heat is absorbed on one of the heat-conducting plates, and a certain amount of heat is released on the other plate in accordance with the Peltier effect.

Experiments for cycles +40\+90°C, with a cycle duration of about 30 seconds for a fuel cell 40 × 40 cm in size, containing 199 pairs of semiconductor legs with dimensions: height 0.85 mm, cross section 1.43 × 1.43 mm s thickness of Al layers of 80-200 microns showed an increase in the lifetime of FC by 3-4 times compared to FC without Al layers.

The utility model has been disclosed above with reference to a specific embodiment. For specialists, other embodiments of the utility model may be obvious, without changing its essence, as it is disclosed in the present description. Accordingly, the utility model should be considered limited in scope only below the following claims of the utility model.

Claims (3)

1. A thermoelectric element containing semiconductor branches of n- and p-types of conductivity interconnected by metal buses into an electrical circuit, while between the semiconductor branches of n- and p-types of conductivity and metal tires there is an aluminum layer, the thickness of which is 80-200 µm. 2. Thermoelectric element according to claim 1, characterized in that between the semiconductor branches of n- and p-types of conductivity and the aluminum layer there is an adhesive metal layer in the form of at least one metal selected from the group: Mo, V, Cr, Ni or intermetallic compound Ni-Sn. 3. Thermoelectric element according to claim. 1, characterized in that a layer of solder metal selected from the group: Ni, Cu is applied over the aluminum layer.

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