RU2019121475A - METHOD FOR PROCESSING SEMICONDUCTOR STRUCTURES WITH GERMANIUM SUBSTRATE - Google Patents

METHOD FOR PROCESSING SEMICONDUCTOR STRUCTURES WITH GERMANIUM SUBSTRATE Download PDF

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Publication number
RU2019121475A
RU2019121475A RU2019121475A RU2019121475A RU2019121475A RU 2019121475 A RU2019121475 A RU 2019121475A RU 2019121475 A RU2019121475 A RU 2019121475A RU 2019121475 A RU2019121475 A RU 2019121475A RU 2019121475 A RU2019121475 A RU 2019121475A
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RU
Russia
Prior art keywords
carrier disk
protrusions
germanium substrate
substrate
semiconductor structures
Prior art date
Application number
RU2019121475A
Other languages
Russian (ru)
Other versions
RU2755415C2 (en
RU2019121475A3 (en
Inventor
Борис Николаевич Самсоненко
Original Assignee
Акционерное общество "Сатурн" (АО "Сатурн")
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Priority to RU2019121475A priority Critical patent/RU2755415C2/en
Publication of RU2019121475A publication Critical patent/RU2019121475A/en
Publication of RU2019121475A3 publication Critical patent/RU2019121475A3/ru
Application granted granted Critical
Publication of RU2755415C2 publication Critical patent/RU2755415C2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Claims (1)

Способ обработки полупроводниковых структур с германиевой подложкой, включающий фиксацию полупроводниковой структуры лицевой стороной на диске-носителе посредством клеевого соединения, утонение подложки, разделение полупроводниковой структуры на чипы, напыление тыльной металлизации с нагревом подложки, снятие металлизированных чипов с диска-носителя, отличающийся тем, что фиксацию полупроводниковой структуры на диске-носителе выполняют на выступах, имеющих вид полос, закрепленных вертикально на диске-носителе, при этом диск-носитель и выступы изготавливают из материалов с близкими к германиевой подложке коэффициентами термического расширения, а выступы располагают с внутренней стороны контура разделения полупроводниковой структуры, фиксацию которой на выступах выполняют посредством эпоксидно-пластизолевой смеси.A method for processing semiconductor structures with a germanium substrate, including fixing the semiconductor structure with the front side on the carrier disk by means of an adhesive bond, thinning the substrate, dividing the semiconductor structure into chips, spraying back metallization with heating the substrate, removing metallized chips from the carrier disk, characterized in that fixation of the semiconductor structure on the carrier disk is performed on protrusions in the form of strips fixed vertically on the carrier disk, while the carrier disk and protrusions are made of materials with thermal expansion coefficients close to the germanium substrate, and the protrusions are located on the inner side of the semiconductor separation circuit a structure, the fixation of which on the protrusions is performed by means of an epoxy-plastisol mixture.
RU2019121475A 2019-07-05 2019-07-05 Method for processing semiconductor structures with a germanium substrate RU2755415C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2019121475A RU2755415C2 (en) 2019-07-05 2019-07-05 Method for processing semiconductor structures with a germanium substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2019121475A RU2755415C2 (en) 2019-07-05 2019-07-05 Method for processing semiconductor structures with a germanium substrate

Publications (3)

Publication Number Publication Date
RU2019121475A true RU2019121475A (en) 2021-01-11
RU2019121475A3 RU2019121475A3 (en) 2021-05-26
RU2755415C2 RU2755415C2 (en) 2021-09-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2019121475A RU2755415C2 (en) 2019-07-05 2019-07-05 Method for processing semiconductor structures with a germanium substrate

Country Status (1)

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RU (1) RU2755415C2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2249881C1 (en) * 2003-07-16 2005-04-10 Государственное унитарное предприятие "Научно-производственное предприятие "Пульсар" Method for treatment of semiconductor wafers
RU2354009C1 (en) * 2007-12-07 2009-04-27 Физико-технический институт им. А.Ф. Иоффе РАН Method for manufacture of photoelectric transducers based on multilayer structure
US7972969B2 (en) * 2008-03-06 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thinning a substrate
RU2685015C2 (en) * 2017-01-30 2019-04-16 Публичное акционерное общество "Сатурн", (ПАО "Сатурн") Method of manufacturing a photoconverter with a integrated diode on a thin substrate

Also Published As

Publication number Publication date
RU2755415C2 (en) 2021-09-15
RU2019121475A3 (en) 2021-05-26

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