RU2016131375A - A method of manufacturing semiconductor resistive sensors for measuring ozone in the air - Google Patents

A method of manufacturing semiconductor resistive sensors for measuring ozone in the air Download PDF

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Publication number
RU2016131375A
RU2016131375A RU2016131375A RU2016131375A RU2016131375A RU 2016131375 A RU2016131375 A RU 2016131375A RU 2016131375 A RU2016131375 A RU 2016131375A RU 2016131375 A RU2016131375 A RU 2016131375A RU 2016131375 A RU2016131375 A RU 2016131375A
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RU
Russia
Prior art keywords
air
manufacturing semiconductor
resistive sensors
measuring ozone
metal oxide
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RU2016131375A
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Russian (ru)
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RU2016131375A3 (en
RU2660338C2 (en
Inventor
Людмила Алексеевна Обвинцева
Александр Константинович Аветисов
Ирина Петровна Сухарева
Татьяна Борисовна Шарова
Марина Петровна Дмитриева
Фатима Христофоровна Чибирова
Original Assignee
Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова")
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Application filed by Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова") filed Critical Акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (АО "НИФХИ им. Л.Я. Карпова")
Priority to RU2016131375A priority Critical patent/RU2660338C2/en
Publication of RU2016131375A publication Critical patent/RU2016131375A/en
Publication of RU2016131375A3 publication Critical patent/RU2016131375A3/ru
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Publication of RU2660338C2 publication Critical patent/RU2660338C2/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Claims (1)

Способ изготовления полупроводниковых резистивных сенсоров для измерения содержания озона в воздухе, заключающийся в том, что металлооксидные полупроводниковые пленки наносят на нагреваемые диэлектрические подложки и формируют чувствительный слой путем экспериментально установленных многоэтапных режимов отжига при непрерывном измерении сопротивления металлооксидной пленки, отличающийся тем, что для измерения концентраций озона в воздухе в интервале от 50 до 400 мкг/м3 используют металлооксидные пленки на основе In2O3 с добавками Fe2O3, при этом выбирают режим формирования чувствительного слоя, когда пленку нагревают в воздухе со скоростью не меньше 8,5 и не больше 13°С/мин до температур 460-650°С, а затем при этих температурах выдерживают не менее 0,5 ч.A method of manufacturing semiconductor resistive sensors for measuring ozone in the air, which consists in the fact that the metal oxide semiconductor films are deposited on heated dielectric substrates and form a sensitive layer by experimentally established multi-stage annealing modes while continuously measuring the resistance of the metal oxide film, characterized in that for measuring ozone concentrations in air in the range from 50 to 400 μg / m 3 metal oxide films based on In 2 O 3 with Fe 2 additives are used O 3 , in this case, the mode of formation of the sensitive layer is selected when the film is heated in air at a speed of not less than 8.5 and not more than 13 ° C / min to temperatures of 460-650 ° C, and then withstand at least 0.5 hours
RU2016131375A 2016-07-29 2016-07-29 Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements RU2660338C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2016131375A RU2660338C2 (en) 2016-07-29 2016-07-29 Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2016131375A RU2660338C2 (en) 2016-07-29 2016-07-29 Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements

Publications (3)

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RU2016131375A true RU2016131375A (en) 2018-02-01
RU2016131375A3 RU2016131375A3 (en) 2018-02-28
RU2660338C2 RU2660338C2 (en) 2018-07-05

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RU2016131375A RU2660338C2 (en) 2016-07-29 2016-07-29 Semiconductor resistive sensors manufacturing method for the ozone in the air content measurements

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111796000A (en) * 2020-07-07 2020-10-20 王垚 Miniaturized ozone monitor based on gas-sensitive semiconductor and monitoring method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0695082B2 (en) * 1987-10-08 1994-11-24 新コスモス電機株式会社 Suction-type ozone gas detector
JP2988016B2 (en) * 1991-07-01 1999-12-06 松下電器産業株式会社 Ozone sensor
RU2088911C1 (en) * 1996-03-20 1997-08-27 Научно-исследовательский физико-химический институт им.Л.Я.Карпова Method for selectively determining ozone in air in presence of chlorine and nitrogen oxides
GB9819228D0 (en) * 1998-09-03 1998-10-28 Capteur Sensors & Analysers Semiconductor gas sensor of ozone
RU2165614C1 (en) * 2000-02-29 2001-04-20 Московский государственный университет леса Technique rising sensitivity of gas sensors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111796000A (en) * 2020-07-07 2020-10-20 王垚 Miniaturized ozone monitor based on gas-sensitive semiconductor and monitoring method

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RU2016131375A3 (en) 2018-02-28
RU2660338C2 (en) 2018-07-05

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