RU2014112883A - METHOD OF MICROWAVE TREATMENT OF DIELECTRIC MATERIALS (OPTIONS) - Google Patents
METHOD OF MICROWAVE TREATMENT OF DIELECTRIC MATERIALS (OPTIONS) Download PDFInfo
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- RU2014112883A RU2014112883A RU2014112883/06A RU2014112883A RU2014112883A RU 2014112883 A RU2014112883 A RU 2014112883A RU 2014112883/06 A RU2014112883/06 A RU 2014112883/06A RU 2014112883 A RU2014112883 A RU 2014112883A RU 2014112883 A RU2014112883 A RU 2014112883A
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- microwave
- dielectric
- dielectric material
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- emitter
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- Constitution Of High-Frequency Heating (AREA)
Abstract
1. Способ СВЧ-обработки диэлектрических материалов, состоящий в том, что диэлектрический материал с известной диэлектрической проницаемостью (ε) и тангенсом угла диэлектрических потерь (tg δ) помещают в металлическую камеру, облучают СВЧ-излучением, отличающийся тем, что СВЧ-излучатель размещают с противоположной стороны перпендикулярно обрабатываемой поверхности диэлектрического материала, который облучают СВЧ-излучением подачей электромагнитных волн перпендикулярно его поверхности, механически устанавливают размеры h СВЧ-излучателя, и компенсируют реактивную составляющую входного сопротивления.2. Способ СВЧ-обработки диэлектрических материалов, состоящий в том, что диэлектрический материал с неизвестной диэлектрической проницаемостью (ε) и тангенсом угла потерь (tg δ) помещают в металлическую камеру, облучают СВЧ-излучением, отличающийся тем, что СВЧ-излучатель размещают с противоположной стороны перпендикулярно обрабатываемой поверхности диэлектрического материала, который облучают СВЧ-излучением подачей электромагнитных волн перпендикулярно его поверхности, определяют положение сечения волноводной линии, в котором входное сопротивление равно волновому, СВЧ-излучатель располагают на расстоянии, кратном целому числу длин полуволн от найденного расстояния l между СВЧ-излучателем и границей раздела обрабатываемой поверхности диэлектрического материала и свободного пространства.1. The method of microwave processing of dielectric materials, which consists in the fact that a dielectric material with a known dielectric constant (ε) and dielectric loss tangent (tan δ) are placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed on the opposite side of the surface of the dielectric material perpendicular to the surface that is irradiated with microwave radiation by applying electromagnetic waves perpendicular to its surface, the dimensions h of the microwave emitter are mechanically set I, and compensate for the reactive component of the input resistance. 2. The method of microwave processing of dielectric materials, which consists in the fact that a dielectric material with an unknown dielectric constant (ε) and a loss tangent (tan δ) are placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed on the opposite side perpendicular to the treated surface of the dielectric material, which is irradiated with microwave radiation by the supply of electromagnetic waves perpendicular to its surface, determine the position of the section of the waveguide line in which the input the resistance is equal to the wave, the microwave emitter is located at a distance multiple of an integer half-wavelength from the found distance l between the microwave emitter and the interface of the treated surface of the dielectric material and free space.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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RU2014112883/06A RU2570293C2 (en) | 2014-04-02 | 2014-04-02 | Method of uhf-treatment of dielectric materials (options) |
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RU2014112883/06A RU2570293C2 (en) | 2014-04-02 | 2014-04-02 | Method of uhf-treatment of dielectric materials (options) |
Publications (2)
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RU2014112883A true RU2014112883A (en) | 2015-10-10 |
RU2570293C2 RU2570293C2 (en) | 2015-12-10 |
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RU2014112883/06A RU2570293C2 (en) | 2014-04-02 | 2014-04-02 | Method of uhf-treatment of dielectric materials (options) |
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RU (1) | RU2570293C2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2681619C1 (en) * | 2017-12-29 | 2019-03-11 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный технический университет" | Method and device for diluting oil sludge inside tanks and closed capacities with microwave-field |
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Publication number | Priority date | Publication date | Assignee | Title |
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RU2061203C1 (en) * | 1992-07-31 | 1996-05-27 | Товарищество с ограниченной ответственностью "Научно-техническое предприятие "Ликташ" | Device for heat treatment of flat dielectric materials |
RU2302592C1 (en) * | 2005-12-15 | 2007-07-10 | Белгородский государственный технологический университет им. В.Г. Шухова | Method of microwave treatment of dielectric materials |
US9038284B2 (en) * | 2011-11-29 | 2015-05-26 | Corning Incorporated | Systems and methods for efficient microwave drying of extruded honeycomb structures |
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- 2014-04-02 RU RU2014112883/06A patent/RU2570293C2/en not_active IP Right Cessation
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Effective date: 20200403 |