RU2014112883A

RU2014112883A - METHOD OF MICROWAVE TREATMENT OF DIELECTRIC MATERIALS (OPTIONS)

Info

Publication number: RU2014112883A
Application number: RU2014112883/06A
Authority: RU
Inventors: Светлана Николаевна Лаптева
Priority date: 2014-04-02
Filing date: 2014-04-02
Publication date: 2015-10-10
Also published as: RU2570293C2

Abstract

1. Способ СВЧ-обработки диэлектрических материалов, состоящий в том, что диэлектрический материал с известной диэлектрической проницаемостью (ε) и тангенсом угла диэлектрических потерь (tg δ) помещают в металлическую камеру, облучают СВЧ-излучением, отличающийся тем, что СВЧ-излучатель размещают с противоположной стороны перпендикулярно обрабатываемой поверхности диэлектрического материала, который облучают СВЧ-излучением подачей электромагнитных волн перпендикулярно его поверхности, механически устанавливают размеры h СВЧ-излучателя, и компенсируют реактивную составляющую входного сопротивления.2. Способ СВЧ-обработки диэлектрических материалов, состоящий в том, что диэлектрический материал с неизвестной диэлектрической проницаемостью (ε) и тангенсом угла потерь (tg δ) помещают в металлическую камеру, облучают СВЧ-излучением, отличающийся тем, что СВЧ-излучатель размещают с противоположной стороны перпендикулярно обрабатываемой поверхности диэлектрического материала, который облучают СВЧ-излучением подачей электромагнитных волн перпендикулярно его поверхности, определяют положение сечения волноводной линии, в котором входное сопротивление равно волновому, СВЧ-излучатель располагают на расстоянии, кратном целому числу длин полуволн от найденного расстояния l между СВЧ-излучателем и границей раздела обрабатываемой поверхности диэлектрического материала и свободного пространства.1. The method of microwave processing of dielectric materials, which consists in the fact that a dielectric material with a known dielectric constant (ε) and dielectric loss tangent (tan δ) are placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed on the opposite side of the surface of the dielectric material perpendicular to the surface that is irradiated with microwave radiation by applying electromagnetic waves perpendicular to its surface, the dimensions h of the microwave emitter are mechanically set I, and compensate for the reactive component of the input resistance. 2. The method of microwave processing of dielectric materials, which consists in the fact that a dielectric material with an unknown dielectric constant (ε) and a loss tangent (tan δ) are placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed on the opposite side perpendicular to the treated surface of the dielectric material, which is irradiated with microwave radiation by the supply of electromagnetic waves perpendicular to its surface, determine the position of the section of the waveguide line in which the input the resistance is equal to the wave, the microwave emitter is located at a distance multiple of an integer half-wavelength from the found distance l between the microwave emitter and the interface of the treated surface of the dielectric material and free space.

Claims

1. The method of microwave processing of dielectric materials, which consists in the fact that a dielectric material with a known dielectric constant (ε) and dielectric loss tangent (tan δ) are placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed on the opposite side of the surface of the dielectric material perpendicular to the surface that is irradiated with microwave radiation by applying electromagnetic waves perpendicular to its surface, the dimensions h of the microwave emitter are mechanically set I, and compensate for the reactive component of the input resistance.

2. A method of microwave processing of dielectric materials, wherein a dielectric material with an unknown dielectric constant (ε) and a loss tangent (tan δ) is placed in a metal chamber, irradiated with microwave radiation, characterized in that the microwave emitter is placed with the opposite side of the perpendicular to the treated surface of the dielectric material, which is irradiated with microwave radiation by supplying electromagnetic waves perpendicular to its surface, determine the position of the section of the waveguide line in which the input e is equal to the wave resistance, microwave emitter a distance, an integer multiple of half-wave lengths of the found distance l between the microwave radiator and the edge of the treated surface section of dielectric material and free space.