RU2012104686A - HIGH-SPEED LIGHT TRANSISTOR - Google Patents
HIGH-SPEED LIGHT TRANSISTOR Download PDFInfo
- Publication number
- RU2012104686A RU2012104686A RU2012104686/28A RU2012104686A RU2012104686A RU 2012104686 A RU2012104686 A RU 2012104686A RU 2012104686/28 A RU2012104686/28 A RU 2012104686/28A RU 2012104686 A RU2012104686 A RU 2012104686A RU 2012104686 A RU2012104686 A RU 2012104686A
- Authority
- RU
- Russia
- Prior art keywords
- band
- transistor
- speed light
- junction
- electrons pass
- Prior art date
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- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Светотранзистор с высоким быстродействием, выполненный в виде биполярного транзистора с р-n-р или n-р-n-структурой, отличающийся тем, что в нем р-n-переход, на котором электроны переходят из р зоны в n зону, сформирован в виде светоизлучающего, а n-р-переход, на котором электроны переходят из n зоны в р зону - в виде фотопоглощающего, и образуют интегральную оптопару внутри самого транзистора.A high-speed light transistor made in the form of a bipolar transistor with a pnp or npn structure, characterized in that it has a pn junction at which electrons pass from the p band to the n band, is formed in in the form of light-emitting, and the n-p junction, at which the electrons pass from the n band to the p band, is in the form of a photoabsorbing one, and form an integrated optocouple inside the transistor itself.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2012104686/28A RU2507632C2 (en) | 2012-02-09 | 2012-02-09 | Light transistor with high efficiency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2012104686/28A RU2507632C2 (en) | 2012-02-09 | 2012-02-09 | Light transistor with high efficiency |
Publications (2)
Publication Number | Publication Date |
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RU2012104686A true RU2012104686A (en) | 2013-08-20 |
RU2507632C2 RU2507632C2 (en) | 2014-02-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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RU2012104686/28A RU2507632C2 (en) | 2012-02-09 | 2012-02-09 | Light transistor with high efficiency |
Country Status (1)
Country | Link |
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RU (1) | RU2507632C2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2587534C1 (en) * | 2014-12-08 | 2016-06-20 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Дагестанский государственный технический университет" | Efficient light transistor |
RU2673424C1 (en) * | 2018-02-06 | 2018-11-26 | Ооо "Центральный Научно-Исследовательский Институт "Апертура" | Photodetector on cascade transistors with light emitting p-n-junctions and photosensitive n-p-junctions |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU1787297C (en) * | 1990-07-27 | 1993-01-07 | Физико-технический институт им.А.Ф.Иоффе | Optoelectronic device |
KR100850754B1 (en) * | 2004-02-16 | 2008-08-06 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Light emitting transistor |
RU2405230C1 (en) * | 2009-06-01 | 2010-11-27 | Государственное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method of removing heat from radiative heat-emitting electronic components |
RU102820U1 (en) * | 2010-10-21 | 2011-03-10 | Межрегиональное общественное учреждение "Институт инженерной физики" | DEVICE FOR PROTECTING THE INFORMED ON TEACHING INFORMATION FROM DIDACTIC ERRORS |
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2012
- 2012-02-09 RU RU2012104686/28A patent/RU2507632C2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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RU2507632C2 (en) | 2014-02-20 |
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QB4A | Licence on use of patent |
Free format text: LICENCE Effective date: 20140729 |
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Effective date: 20160210 |