RU2012101194A - LIGHT-RADIATING MODULE, BLOCK OF LIGHT SOURCES AND METHODS OF THEIR MANUFACTURE - Google Patents

LIGHT-RADIATING MODULE, BLOCK OF LIGHT SOURCES AND METHODS OF THEIR MANUFACTURE Download PDF

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RU2012101194A
RU2012101194A RU2012101194/28A RU2012101194A RU2012101194A RU 2012101194 A RU2012101194 A RU 2012101194A RU 2012101194/28 A RU2012101194/28 A RU 2012101194/28A RU 2012101194 A RU2012101194 A RU 2012101194A RU 2012101194 A RU2012101194 A RU 2012101194A
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light
light emitting
substrate
block
emitting module
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RU2012101194/28A
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Russian (ru)
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Йоханн Рамхен
Леонид Владимирович Моисеев
Карим Джафарович Мынбаев
Алексей Евгеньевич Романов
Владислав Евгеньевич Бугров
Алексей Русланович Ковш
Максим Анатольевич Одноблюдов
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Общество с ограниченной ответственностью "Оптоган. Новые технологии света"
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Priority to RU2012101194/28A priority Critical patent/RU2012101194A/en
Priority to PCT/EP2013/050387 priority patent/WO2013104708A1/en
Publication of RU2012101194A publication Critical patent/RU2012101194A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

1. Светоизлучающий модуль (10), содержащий:- подложку (1), сформированную из керамического материала и имеющую структурированное металлическое покрытие (2, 2а, 2b) для обеспечения электрического интерфейса светоизлучающего модуля и его внутренних электрических соединений; и- множество светоизлучающих полупроводниковых кристаллов (3), размещенных на подложке и электрически связанных с металлическим покрытием, причем каждый светоизлучающий полупроводниковый кристалл заключен в герметизирующий материал (5);отличающийся тем, что герметизирующий материал образует единый сплошной герметизирующий слой (5) на подложке (1), причем этот герметизирующий слой ограничен в поперечном направлении окружающим пространством (8).2. Светоизлучающий модуль (10) по п.1, в котором внешняя поверхность (12) герметизирующего слоя структурирована для улучшения извлечения света из светоизлучающего модуля.3. Блок источников света (9), содержащий множество светоизлучающих модулей (10) по п.1 или 2, при этом подложки (1) светоизлучающих модулей образуют единую общую подложку (11).4. Блок источников света (9) по п.3, в котором общая подложка (11) имеет ослабляющую разметку для облегчения разделения блока источников света на отдельные осветительные элементы (14), каждый из которых содержит один или более светоизлучающих модулей (10).5. Блок источников света (9) по п.3 или 4, в котором металлическое покрытие (2) содержит контактный элемент (13), электрически связывающий вместе два соседних светоизлучающих модуля (10).6. Блок источников света (9) по п.5, в котором контактный элемент (13) имеет толщину в диапазоне от 10 до 40 мкм.7. Способ изготовления светоизлучающего модуля (10), вкл1. Light emitting module (10), containing: - a substrate (1) formed from a ceramic material and having a structured metal coating (2, 2a, 2b) to provide an electrical interface of the light emitting module and its internal electrical connections; and - a plurality of light-emitting semiconductor crystals (3) placed on the substrate and electrically connected to the metal coating, each light-emitting semiconductor crystal being enclosed in a sealing material (5); characterized in that the sealing material forms a single continuous sealing layer (5) on the substrate ( 1), and this sealing layer is limited in the transverse direction by the surrounding space (8).2. Light emitting module (10) according to claim 1, wherein the outer surface (12) of the sealing layer is structured to improve light extraction from the light emitting module. A light source block (9) containing a plurality of light emitting modules (10) according to claim 1 or 2, wherein the substrates (1) of the light emitting modules form a single common substrate (11). Light source block (9) according to claim 3, in which the common substrate (11) has a weakening marking to facilitate the separation of the light source block into separate lighting elements (14), each of which contains one or more light emitting modules (10). A light source unit (9) according to claim 3 or 4, wherein the metal coating (2) comprises a contact element (13) electrically connecting two adjacent light emitting modules (10) together. The light source unit (9) according to claim 5, wherein the contact element (13) has a thickness in the range of 10 to 40 µm. Method for manufacturing a light emitting module (10), incl.

Claims (12)

1. Светоизлучающий модуль (10), содержащий:1. A light emitting module (10), comprising: - подложку (1), сформированную из керамического материала и имеющую структурированное металлическое покрытие (2, 2а, 2b) для обеспечения электрического интерфейса светоизлучающего модуля и его внутренних электрических соединений; и- a substrate (1) formed of a ceramic material and having a structured metal coating (2, 2a, 2b) to provide an electrical interface to the light emitting module and its internal electrical connections; and - множество светоизлучающих полупроводниковых кристаллов (3), размещенных на подложке и электрически связанных с металлическим покрытием, причем каждый светоизлучающий полупроводниковый кристалл заключен в герметизирующий материал (5);- a plurality of light-emitting semiconductor crystals (3) placed on a substrate and electrically connected to a metal coating, each light-emitting semiconductor crystal is enclosed in a sealing material (5); отличающийся тем, что герметизирующий материал образует единый сплошной герметизирующий слой (5) на подложке (1), причем этот герметизирующий слой ограничен в поперечном направлении окружающим пространством (8).characterized in that the sealing material forms a single continuous sealing layer (5) on the substrate (1), and this sealing layer is limited in the transverse direction by the surrounding space (8). 2. Светоизлучающий модуль (10) по п.1, в котором внешняя поверхность (12) герметизирующего слоя структурирована для улучшения извлечения света из светоизлучающего модуля.2. The light emitting module (10) according to claim 1, wherein the outer surface (12) of the sealing layer is structured to improve the extraction of light from the light emitting module. 3. Блок источников света (9), содержащий множество светоизлучающих модулей (10) по п.1 или 2, при этом подложки (1) светоизлучающих модулей образуют единую общую подложку (11).3. A block of light sources (9) containing a plurality of light emitting modules (10) according to claim 1 or 2, wherein the substrates (1) of the light emitting modules form a single common substrate (11). 4. Блок источников света (9) по п.3, в котором общая подложка (11) имеет ослабляющую разметку для облегчения разделения блока источников света на отдельные осветительные элементы (14), каждый из которых содержит один или более светоизлучающих модулей (10).4. The block of light sources (9) according to claim 3, in which the common substrate (11) has a weakening marking to facilitate the separation of the block of light sources into separate lighting elements (14), each of which contains one or more light-emitting modules (10). 5. Блок источников света (9) по п.3 или 4, в котором металлическое покрытие (2) содержит контактный элемент (13), электрически связывающий вместе два соседних светоизлучающих модуля (10).5. The block of light sources (9) according to claim 3 or 4, in which the metal coating (2) contains a contact element (13) electrically connecting together two adjacent light-emitting modules (10). 6. Блок источников света (9) по п.5, в котором контактный элемент (13) имеет толщину в диапазоне от 10 до 40 мкм.6. The block of light sources (9) according to claim 5, in which the contact element (13) has a thickness in the range from 10 to 40 microns. 7. Способ изготовления светоизлучающего модуля (10), включающий следующие этапы:7. A method of manufacturing a light emitting module (10), comprising the following steps: - обеспечение наличия подложки (1), сформированной из керамического материала и имеющей структурированное металлическое покрытие (2, 2а, 2b) для обеспечения электрического интерфейса светоизлучающего модуля и его внутренних электрических соединений;- ensuring the presence of a substrate (1) formed of a ceramic material and having a structured metal coating (2, 2a, 2b) to provide an electrical interface to the light-emitting module and its internal electrical connections; - размещение множества светоизлучающих полупроводниковых кристаллов (3) на подложке и их электрическое соединение с металлическим покрытием; и- placing a plurality of light emitting semiconductor crystals (3) on a substrate and their electrical connection with a metal coating; and - заключение каждого светоизлучающего полупроводникового кристалла в герметизирующий материал (5);- the conclusion of each light-emitting semiconductor crystal in a sealing material (5); отличающийся тем, что этап заключения каждого светоизлучающего полупроводникового кристалла в герметизирующий материал включает формирование единого сплошного герметизирующего слоя (5) на подложке (1), содержащей множество светоизлучающих полупроводниковых кристаллов (3), причем герметизирующий слой формируют так, чтобы он был ограничен в поперечном направлении окружающим пространством (8).characterized in that the step of enclosing each light-emitting semiconductor crystal in a sealing material includes forming a single continuous sealing layer (5) on a substrate (1) containing a plurality of light-emitting semiconductor crystals (3), wherein the sealing layer is formed so that it is bounded in the transverse direction surrounding space (8). 8. Способ по п.7, который также включает структурирование внешней поверхности (12) герметизирующего слоя для улучшения извлечения света из светоизлучающего модуля (10).8. The method according to claim 7, which also includes structuring the outer surface (12) of the sealing layer to improve the extraction of light from the light emitting module (10). 9. Способ изготовления блока (9) источников света, включающий изготовление согласно способу по п.7 или 8 множества светоизлучающих модулей (10), при этом указанное множество светоизлучающих модулей изготавливают так, что подложки (1) светоизлучающих модулей формируют единую общую подложку (11).9. A method of manufacturing a block (9) of light sources, comprising manufacturing, according to the method according to claim 7 or 8, a plurality of light emitting modules (10), wherein said plurality of light emitting modules are made such that the substrates (1) of the light emitting modules form a single common substrate (11 ) 10. Способ по п.9, который также включает формирование ослабляющей разметки в общей подложке (11) для облегчения разделения блока источников света (9) на отдельные осветительные элементы (14), каждый из которых содержит один или более светоизлучающих модулей (10).10. The method according to claim 9, which also includes the formation of attenuating markings in a common substrate (11) to facilitate the separation of the block of light sources (9) into separate lighting elements (14), each of which contains one or more light emitting modules (10). 11. Способ по любому из п.9 или 10, в котором подложки (1) двух соседних светоизлучающих модулей (10) сформированы так, что их металлические покрытия (2) образуют контактный элемент (13), электрически связывающий вместе указанные два соседних светоизлучающих модуля.11. The method according to any one of claims 9 or 10, in which the substrates (1) of two adjacent light emitting modules (10) are formed so that their metal coatings (2) form a contact element (13) that electrically bonds together the two adjacent light emitting modules . 12. Способ по п.11, в котором контактный элемент (13) имеет толщину в диапазоне от 10 до 40 мкм. 12. The method according to claim 11, in which the contact element (13) has a thickness in the range from 10 to 40 microns.
RU2012101194/28A 2012-01-10 2012-01-10 LIGHT-RADIATING MODULE, BLOCK OF LIGHT SOURCES AND METHODS OF THEIR MANUFACTURE RU2012101194A (en)

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RU2012101194/28A RU2012101194A (en) 2012-01-10 2012-01-10 LIGHT-RADIATING MODULE, BLOCK OF LIGHT SOURCES AND METHODS OF THEIR MANUFACTURE
PCT/EP2013/050387 WO2013104708A1 (en) 2012-01-10 2013-01-10 Light-emitting module, light source assembly, and methods for manufacturing

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JP2014135471A (en) * 2012-12-10 2014-07-24 Nitto Denko Corp Light emitting device, light emitting device assembly, and substrate with electrode
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GB2458972B (en) 2008-08-05 2010-09-01 Photonstar Led Ltd Thermally optimised led chip-on-board module
US8022626B2 (en) 2008-09-16 2011-09-20 Osram Sylvania Inc. Lighting module
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JP5659519B2 (en) * 2009-11-19 2015-01-28 豊田合成株式会社 Light emitting device, method for manufacturing light emitting device, method for mounting light emitting device, and light source device
WO2011109442A2 (en) * 2010-03-02 2011-09-09 Oliver Steven D Led packaging with integrated optics and methods of manufacturing the same
CN102414851B (en) * 2010-03-11 2016-06-22 松下知识产权经营株式会社 The manufacture method of light emitting module, light supply apparatus, liquid crystal indicator and light emitting module

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