RU2011124312A - METHOD FOR PRODUCING SILICON CRYSTALS - Google Patents

METHOD FOR PRODUCING SILICON CRYSTALS Download PDF

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Publication number
RU2011124312A
RU2011124312A RU2011124312/05A RU2011124312A RU2011124312A RU 2011124312 A RU2011124312 A RU 2011124312A RU 2011124312/05 A RU2011124312/05 A RU 2011124312/05A RU 2011124312 A RU2011124312 A RU 2011124312A RU 2011124312 A RU2011124312 A RU 2011124312A
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RU
Russia
Prior art keywords
silicon crystals
producing silicon
aluminum
melt
mixture
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RU2011124312/05A
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Russian (ru)
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RU2473719C1 (en
Inventor
Евгений Борисович Соколов
Александр Федотович Яремчук
Виолетта Константиновна Прокофьева
Борис Николаевич Рыгалин
Original Assignee
Государственное образовательное учреждение высшего профессионального образования "Московский государственный институт электронной техники (технический университет)" (МИЭТ)
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Priority to RU2011124312/05A priority Critical patent/RU2473719C1/en
Publication of RU2011124312A publication Critical patent/RU2011124312A/en
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Publication of RU2473719C1 publication Critical patent/RU2473719C1/en

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

Способ получения кристаллов кремния, включающий приготовление исходной шихты, легированной бором, плавление шихты, отличающийся тем, что в полученный расплав вводится алюминий в количестве, достаточном для выполнения соотношения концентраций алюминия и кислорода в расплаве кремния в диапазоне 1,0-10.A method of producing silicon crystals, including the preparation of the initial mixture doped with boron, melting the mixture, characterized in that aluminum is introduced into the melt in an amount sufficient to satisfy the ratio of aluminum and oxygen concentrations in the silicon melt in the range of 1.0-10.

Claims (1)

Способ получения кристаллов кремния, включающий приготовление исходной шихты, легированной бором, плавление шихты, отличающийся тем, что в полученный расплав вводится алюминий в количестве, достаточном для выполнения соотношения концентраций алюминия и кислорода в расплаве кремния в диапазоне 1,0-102. A method of obtaining silicon crystals, including the preparation of the initial mixture doped with boron, melting the mixture, characterized in that aluminum is introduced into the melt in an amount sufficient to satisfy the ratio of aluminum and oxygen concentrations in the silicon melt in the range of 1.0-10 2 .
RU2011124312/05A 2011-06-16 2011-06-16 Method of making silicon crystals RU2473719C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2011124312/05A RU2473719C1 (en) 2011-06-16 2011-06-16 Method of making silicon crystals

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Application Number Priority Date Filing Date Title
RU2011124312/05A RU2473719C1 (en) 2011-06-16 2011-06-16 Method of making silicon crystals

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RU2011124312A true RU2011124312A (en) 2012-12-27
RU2473719C1 RU2473719C1 (en) 2013-01-27

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507557B1 (en) * 1970-08-26 1975-03-26
RU2070233C1 (en) * 1992-02-04 1996-12-10 Анатолий Яковлевич Губенко Method of preparing volume silicon monocrystals of p-type
JP2007022863A (en) * 2005-07-19 2007-02-01 Sumco Corp Method for growing silicon single crystal and method for manufacturing silicon wafer

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RU2473719C1 (en) 2013-01-27

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20180617