RU2010136803A - METHOD FOR FORMING A DIELECTRIC LAYER CONDUCTIVITY EFFECTING SWITCHING EFFECT - Google Patents

METHOD FOR FORMING A DIELECTRIC LAYER CONDUCTIVITY EFFECTING SWITCHING EFFECT Download PDF

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Publication number
RU2010136803A
RU2010136803A RU2010136803/28A RU2010136803A RU2010136803A RU 2010136803 A RU2010136803 A RU 2010136803A RU 2010136803/28 A RU2010136803/28 A RU 2010136803/28A RU 2010136803 A RU2010136803 A RU 2010136803A RU 2010136803 A RU2010136803 A RU 2010136803A
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RU
Russia
Prior art keywords
forming
dielectric layer
switching effect
deposition
layer conductivity
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RU2010136803/28A
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Russian (ru)
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RU2449416C1 (en
Inventor
Александр Александрович Орликовский (RU)
Александр Александрович Орликовский
Аркадий Евгеньевич Бердников (RU)
Аркадий Евгеньевич Бердников
Александр Александрович Мироненко (RU)
Александр Александрович Мироненко
Александр Афанасьевич Попов (RU)
Александр Афанасьевич Попов
Владимир Дмитриевич Черномордик (RU)
Владимир Дмитриевич Черномордик
Артур Владимирович Перминов (RU)
Артур Владимирович Перминов
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Учреждение Российской академии наук Физико-технологический институт РАН (RU)
Учреждение Российской академии наук Физико-технологический институт РАН
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Priority to RU2010136803/28A priority Critical patent/RU2449416C1/en
Publication of RU2010136803A publication Critical patent/RU2010136803A/en
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Abstract

Способ формирования обладающего эффектом переключения проводимости диэлектрического слоя путем нанесения композитного материала, отличающийся тем, что нанесение проводят осаждением кремнийсодержащего материала из смеси силана с кислородсодержащими и/или азотсодержащими газами в плазме низкочастотного тлеющего разряда частотой 3-200 кГц. A method of forming a dielectric layer having a switching effect of conductivity by applying a composite material, characterized in that the deposition is carried out by deposition of a silicon-containing material from a mixture of silane with oxygen-containing and / or nitrogen-containing gases in a low-frequency glow discharge plasma with a frequency of 3-200 kHz.

Claims (1)

Способ формирования обладающего эффектом переключения проводимости диэлектрического слоя путем нанесения композитного материала, отличающийся тем, что нанесение проводят осаждением кремнийсодержащего материала из смеси силана с кислородсодержащими и/или азотсодержащими газами в плазме низкочастотного тлеющего разряда частотой 3-200 кГц. A method of forming a dielectric layer having a switching effect of conductivity by applying a composite material, characterized in that the deposition is carried out by deposition of a silicon-containing material from a mixture of silane with oxygen-containing and / or nitrogen-containing gases in a low-frequency glow discharge plasma with a frequency of 3-200 kHz.
RU2010136803/28A 2010-09-02 2010-09-02 Method for formation of dielectric layer with conductivity switching effect RU2449416C1 (en)

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RU2010136803/28A RU2449416C1 (en) 2010-09-02 2010-09-02 Method for formation of dielectric layer with conductivity switching effect

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RU2010136803/28A RU2449416C1 (en) 2010-09-02 2010-09-02 Method for formation of dielectric layer with conductivity switching effect

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RU2010136803A true RU2010136803A (en) 2012-03-10
RU2449416C1 RU2449416C1 (en) 2012-04-27

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Publication number Priority date Publication date Assignee Title
RU2529442C2 (en) * 2012-07-10 2014-09-27 Федеральное государственное бюджетное учреждение науки Физико-технологический институт Российской академии наук Method of production of dielectric layer of mis structures having effect of conductivity switching
RU2563553C2 (en) * 2013-05-07 2015-09-20 Федеральное государственное бюджетное учреждение науки Физико-технологический институт Российской академии наук Structure of dielectric layer for mis structures having conductivity switching effect
RU2657096C2 (en) * 2016-06-07 2018-06-08 федеральное государственное бюджетное образовательное учреждение высшего образования "Ярославский государственный университет им. П.Г. Демидова" (ЯрГУ) Method for forming dielectric films of anodized aluminum-silicon alloy having effect of switching conductivity

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SU833603A1 (en) * 1979-09-17 1981-05-30 Предприятие П/Я Х-5594 Chalcogenide glass
RU2376677C2 (en) * 2007-07-23 2009-12-20 Физико-технологический институт Российской академии наук (статус государственного учреждения) Memory cell with conducting layer-dielectric-conducting layer structure
US8110450B2 (en) * 2007-12-19 2012-02-07 Palo Alto Research Center Incorporated Printed TFT and TFT array with self-aligned gate

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Effective date: 20120903