RU2010136803A - METHOD FOR FORMING A DIELECTRIC LAYER CONDUCTIVITY EFFECTING SWITCHING EFFECT - Google Patents
METHOD FOR FORMING A DIELECTRIC LAYER CONDUCTIVITY EFFECTING SWITCHING EFFECT Download PDFInfo
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- RU2010136803A RU2010136803A RU2010136803/28A RU2010136803A RU2010136803A RU 2010136803 A RU2010136803 A RU 2010136803A RU 2010136803/28 A RU2010136803/28 A RU 2010136803/28A RU 2010136803 A RU2010136803 A RU 2010136803A RU 2010136803 A RU2010136803 A RU 2010136803A
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- forming
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- switching effect
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- layer conductivity
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Abstract
Способ формирования обладающего эффектом переключения проводимости диэлектрического слоя путем нанесения композитного материала, отличающийся тем, что нанесение проводят осаждением кремнийсодержащего материала из смеси силана с кислородсодержащими и/или азотсодержащими газами в плазме низкочастотного тлеющего разряда частотой 3-200 кГц. A method of forming a dielectric layer having a switching effect of conductivity by applying a composite material, characterized in that the deposition is carried out by deposition of a silicon-containing material from a mixture of silane with oxygen-containing and / or nitrogen-containing gases in a low-frequency glow discharge plasma with a frequency of 3-200 kHz.
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RU2010136803/28A RU2449416C1 (en) | 2010-09-02 | 2010-09-02 | Method for formation of dielectric layer with conductivity switching effect |
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RU2010136803/28A RU2449416C1 (en) | 2010-09-02 | 2010-09-02 | Method for formation of dielectric layer with conductivity switching effect |
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RU2010136803A true RU2010136803A (en) | 2012-03-10 |
RU2449416C1 RU2449416C1 (en) | 2012-04-27 |
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RU2010136803/28A RU2449416C1 (en) | 2010-09-02 | 2010-09-02 | Method for formation of dielectric layer with conductivity switching effect |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2529442C2 (en) * | 2012-07-10 | 2014-09-27 | Федеральное государственное бюджетное учреждение науки Физико-технологический институт Российской академии наук | Method of production of dielectric layer of mis structures having effect of conductivity switching |
RU2563553C2 (en) * | 2013-05-07 | 2015-09-20 | Федеральное государственное бюджетное учреждение науки Физико-технологический институт Российской академии наук | Structure of dielectric layer for mis structures having conductivity switching effect |
RU2657096C2 (en) * | 2016-06-07 | 2018-06-08 | федеральное государственное бюджетное образовательное учреждение высшего образования "Ярославский государственный университет им. П.Г. Демидова" (ЯрГУ) | Method for forming dielectric films of anodized aluminum-silicon alloy having effect of switching conductivity |
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SU833603A1 (en) * | 1979-09-17 | 1981-05-30 | Предприятие П/Я Х-5594 | Chalcogenide glass |
RU2376677C2 (en) * | 2007-07-23 | 2009-12-20 | Физико-технологический институт Российской академии наук (статус государственного учреждения) | Memory cell with conducting layer-dielectric-conducting layer structure |
US8110450B2 (en) * | 2007-12-19 | 2012-02-07 | Palo Alto Research Center Incorporated | Printed TFT and TFT array with self-aligned gate |
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MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20120903 |