RU2007132167A - DEVICE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS AND ITS METHODS - Google Patents

DEVICE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS AND ITS METHODS Download PDF

Info

Publication number
RU2007132167A
RU2007132167A RU2007132167/15A RU2007132167A RU2007132167A RU 2007132167 A RU2007132167 A RU 2007132167A RU 2007132167/15 A RU2007132167/15 A RU 2007132167/15A RU 2007132167 A RU2007132167 A RU 2007132167A RU 2007132167 A RU2007132167 A RU 2007132167A
Authority
RU
Russia
Prior art keywords
capsule
pressure
strength shell
heating device
supercritical fluid
Prior art date
Application number
RU2007132167/15A
Other languages
Russian (ru)
Other versions
RU2393008C2 (en
Inventor
Марк Филип Д`ЭВЕЛИН (US)
Марк Филип Д`ЭВЕЛИН
Роберт Артур ГИДДИНГС (US)
Роберт Артур ГИДДИНГС
Фред ШАРИФИ (US)
Фред ШАРИФИ
Субхраджит ДЕЙ (IN)
Субхраджит ДЕЙ
Хойцун ХУН (US)
Хойцун ХУН
Джозеф Александр КАПП (US)
Джозеф Александр КАПП
Ашок Кумар КХАР (US)
Ашок Кумар КХАР
Original Assignee
Дженерал Электрик Компани (US)
Дженерал Электрик Компани
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Дженерал Электрик Компани (US), Дженерал Электрик Компани filed Critical Дженерал Электрик Компани (US)
Publication of RU2007132167A publication Critical patent/RU2007132167A/en
Application granted granted Critical
Publication of RU2393008C2 publication Critical patent/RU2393008C2/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/008Processes carried out under supercritical conditions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/002Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/03Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04Pressure vessels, e.g. autoclaves
    • B01J3/046Pressure-balanced vessels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/065Composition of the material produced
    • B01J2203/0665Gallium nitrides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00Processes utilising sub- or super atmospheric pressure
    • B01J2203/06High pressure synthesis
    • B01J2203/0675Structural or physico-chemical features of the materials processed
    • B01J2203/068Crystal growth
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00051Controlling the temperature
    • B01J2219/00132Controlling the temperature using electric heating or cooling elements
    • B01J2219/00135Electric resistance heaters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00051Controlling the temperature
    • B01J2219/0015Controlling the temperature by thermal insulation means
    • B01J2219/00155Controlling the temperature by thermal insulation means using insulating materials or refractories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049Controlling or regulating processes
    • B01J2219/00162Controlling or regulating processes controlling the pressure
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/54Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Claims (22)

1. Аппарат, содержащий1. The apparatus containing капсулу, выполненную с возможностью содержать сверхкритическую текучую среду;a capsule configured to contain supercritical fluid; сосуд высокого давления, расположенный вокруг капсулы, причем этот сосуд высокого давления выполнен с возможностью содержать сжатый газ, окружающий капсулу; иa pressure vessel located around the capsule, and this pressure vessel is configured to contain compressed gas surrounding the capsule; and устройство регулирования давления, выполненное с возможностью уравновешивать внутреннее давление внутри капсулы с окружающим давлением сжатого газа внутри сосуда высокого давления в ответ на измеренные условия окружающей среды внутри капсулы или сосуда высокого давления.a pressure control device configured to balance the internal pressure inside the capsule with the ambient pressure of the compressed gas inside the pressure vessel in response to the measured environmental conditions inside the capsule or pressure vessel. 2. Аппарат по п.1, содержащий датчик давления, расположенный внутри капсулы, причем этот датчик давления выполнен с возможностью измерять внутреннее давление.2. The apparatus according to claim 1, containing a pressure sensor located inside the capsule, and this pressure sensor is configured to measure internal pressure. 3. Аппарат по п.1, содержащий устройство измерения смещения, выполненное с возможностью измерять деформацию капсулы вследствие разности давлений между внутренним давлением и окружающим давлением.3. The apparatus according to claim 1, containing a displacement measuring device configured to measure the deformation of the capsule due to the pressure difference between the internal pressure and the ambient pressure. 4. Аппарат по п.1, содержащий по меньшей мере одну перфорированную перегородку, размещенную внутри капсулы разделяющей капсулу на первую камеру и вторую камеру, причем упомянутая по меньшей мере одна перфорированная перегородка содержит центральное отверстие и множество отверстий, расположенных симметрично вокруг центрального отверстия.4. The apparatus according to claim 1, containing at least one perforated partition placed inside the capsule separating the capsule into a first chamber and a second chamber, said at least one perforated partition containing a central hole and a plurality of holes symmetrically around the central hole. 5. Аппарат по п.1, содержащий датчики температуры и давления, расположенные внутри капсулы и/или между сосудом высокого давления и капсулой, причем эти датчики температуры и давления выполнены с возможностью обеспечивать управление на основе обратной связи условиями окружающей среды внутри капсулы и обеспечивать управление на основе обратной связи уравновешиванием внутреннего давления в капсуле и окружающего ее давления. 5. The apparatus according to claim 1, containing temperature and pressure sensors located inside the capsule and / or between the pressure vessel and the capsule, and these temperature and pressure sensors are configured to provide feedback control of environmental conditions inside the capsule and provide control based on feedback by balancing the internal pressure in the capsule and the surrounding pressure. 6. Аппарат по п.1, в котором капсула является деформируемой, химически инертной и по существу непроницаемой для сверхкритической текучей среды.6. The apparatus of claim 1, wherein the capsule is deformable, chemically inert, and substantially impervious to supercritical fluid. 7. Аппарат по п.1, содержащий кристалл нитрида галлия, имеющий пик поглощения в инфракрасной области вблизи 3175 см-1 при спектральной поглощательной способности на единицу толщины между примерно 0,01 и 200 см-1, и при этом кристалл нитрида галлия выращивается в сверхкритическом аммиаке при температуре выше 550°С.7. The apparatus according to claim 1, containing a gallium nitride crystal having an absorption peak in the infrared region near 3175 cm -1 at a spectral absorption capacity per unit thickness between about 0.01 and 200 cm -1 , and wherein the gallium nitride crystal is grown in supercritical ammonia at temperatures above 550 ° C. 8. Аппарат, содержащий8. The apparatus containing высокопрочную оболочку;high strength shell; капсулу, размещенную внутри высокопрочной оболочки, причем эта капсула выполнена с возможностью содержать один или более материалов в окружающей среде со сверхкритической текучей средой;a capsule placed inside a high-strength shell, the capsule being configured to contain one or more materials in a supercritical fluid environment; нагревательное устройство, расположенное между высокопрочной оболочкой и капсулой, причем это нагревательное устройство выполнено с возможностью передавать тепло в окружающую среду внутри капсулы, так что эта окружающая среда нагревается и самопроизвольно повышает свое давление от этого тепла, при этом высокопрочная оболочка выполнена с возможностью окружать и упираться в капсулу для противодействия внутренним давлениям внутри капсулы; и a heating device located between the high-strength shell and the capsule, and this heating device is configured to transfer heat to the environment inside the capsule, so that this environment heats up and spontaneously increases its pressure from this heat, while the high-strength shell is made to surround and abut into a capsule to counter internal pressures inside the capsule; and теплоизоляцию, размещенную между высокопрочной оболочкой и нагревательным устройством, причем эта теплоизоляция выполнена с возможностью удерживать тепло внутри капсулы и уменьшать теплопередачу в высокопрочную оболочку.thermal insulation located between the high-strength shell and the heating device, and this thermal insulation is made with the ability to retain heat inside the capsule and reduce heat transfer to the high-strength shell. 9. Аппарат по п.8, содержащий охлаждающее устройство, выполненное с возможностью охлаждать высокопрочную оболочку.9. The apparatus of claim 8, containing a cooling device configured to cool the high-strength shell. 10. Аппарат по п.8, причем этот аппарат выполнен с возможностью повышать рабочие условия внутри капсулы до давлений, превышающих 1 кбар, и температур, превышающих 550°С, или до давлений, превышающих 5 кбар, и температур, превышающих 300°.10. The apparatus of claim 8, wherein this apparatus is configured to increase operating conditions inside the capsule to pressures exceeding 1 kbar and temperatures exceeding 550 ° C, or to pressures exceeding 5 kbar and temperatures exceeding 300 °. 11. Аппарат по п.8, в котором капсула является механически расширяемой и сжимаемой, химически инертной и непроницаемой для сверхкритической текучей среды.11. The apparatus of claim 8, in which the capsule is mechanically expandable and compressible, chemically inert and impervious to supercritical fluid. 12. Аппарат по п.8, содержащий систему регулирования температуры, выполненную с возможностью управлять нагревательным устройством для регулирования температуры капсулы.12. The apparatus of claim 8, comprising a temperature control system configured to control a heating device for controlling the temperature of the capsule. 13. Аппарат по п.8, содержащий разделительную конструкцию, размещенную внутри капсулы разделяющей капсулу на первую камеру и вторую камеру, причем эта разделительная конструкция содержит центральное отверстие и множество отверстий, расположенных симметрично вокруг центрального отверстия.13. The apparatus of claim 8, comprising a dividing structure disposed within a capsule separating the capsule into a first chamber and a second chamber, the dividing structure comprising a central hole and a plurality of holes symmetrically around the central hole. 14. Аппарат по п.8, содержащий высокотемпературный вкладыш, размещенный между теплоизоляцией и высокопрочной оболочкой.14. The apparatus of claim 8, containing a high-temperature liner located between the insulation and high-strength shell. 15. Аппарат по п.8, содержащий множество радиальных сегментов, размещенных один за другим вокруг периферии капсулы внутри высокопрочной оболочки.15. The apparatus of claim 8, containing many radial segments placed one after another around the periphery of the capsule inside the high-strength shell. 16. Аппарат по п.8, в котором капсула содержит гильзу с более высоким коэффициентом термического расширения, чем у нагревательного элемента.16. The apparatus of claim 8, in which the capsule contains a sleeve with a higher coefficient of thermal expansion than the heating element. 17. Аппарат по п.8, содержащий кристалл нитрида галлия, имеющий пик поглощения в инфракрасной области вблизи 3175 см-1 при спектральной поглощательной способности на единицу толщины между примерно 0,01 и 200 см-1, и при этом кристалл нитрида галлия выращивается в сверхкритическом аммиаке при температуре свыше 550°С.17. The apparatus of claim 8, containing a gallium nitride crystal having an absorption peak in the infrared region near 3175 cm -1 at a spectral absorption capacity per unit thickness between about 0.01 and 200 cm -1 , and the gallium nitride crystal is grown in supercritical ammonia at temperatures above 550 ° C. 18. Аппарат, содержащий18. The apparatus containing сосуд высокого давления, выполненный с возможностью обработки материала, содержащегося в капсуле с самопроизвольным повышением давления, причем этот сосуд высокого давления выполнен с возможностью содержать сжатый газ, окружающий капсулу с самопроизвольным повышением давления; a pressure vessel configured to process the material contained in the capsule with spontaneous pressure increase, and this pressure vessel is configured to contain compressed gas surrounding the capsule with spontaneous pressure increase; устройство измерения смещения, выполненное с возможностью измерять деформацию капсулы с самопроизвольным повышением давления вследствие разности давлений между внутренним давлением и окружающим давлением капсулы с самопроизвольным повышением давления; иa displacement measuring device configured to measure the deformation of the capsule with a spontaneous increase in pressure due to the pressure difference between the internal pressure and the ambient pressure of the capsule with a spontaneous increase in pressure; and устройство регулирования давления, выполненное с возможностью уравновешивать внутреннее давление внутри капсулы с окружающим давлением сжатого газа внутри сосуда высокого давления при минимизации смещения или деформации капсулы с самопроизвольным повышением давления.a pressure control device configured to balance the internal pressure inside the capsule with the surrounding pressure of the compressed gas inside the pressure vessel while minimizing displacement or deformation of the capsule with spontaneous pressure increase. 19. Аппарат, содержащий19. The apparatus containing высокопрочную оболочку;high strength shell; нагревательное устройство, расположенное внутри высокопрочной оболочки и выполненное с возможностью вмещать капсулу, причем это нагревательное устройство выполнено с возможностью передавать тепло в окружающую среду внутри капсулы, так что эта окружающая среда нагревается и самопроизвольно повышает свое давление от этого тепла, при этом высокопрочная оболочка выполнена с возможностью окружать и упираться в капсулу для противодействия внутренним давлениям внутри капсулы без значительного давления газа между нагревательным устройством и капсулой; и a heating device located inside the high-strength shell and configured to hold the capsule, and this heating device is configured to transfer heat to the environment inside the capsule, so that this environment heats up and spontaneously increases its pressure from this heat, while the high-strength shell is made with the ability to surround and abut the capsule to counter internal pressures inside the capsule without significant gas pressure between the heating device PTO and capsule; and теплоизоляцию, размещенную между высокопрочной оболочкой и нагревательным устройством.thermal insulation placed between the high-strength shell and the heating device. 20. Способ эксплуатации аппарата, содержащий20. A method of operating an apparatus comprising идентификацию разности между внутренним давлением внутри капсулы со сверхкритической текучей средой и окружающим давлением между сосудом высокого давления и капсулой со сверхкритической текучей средой, размещенной внутри сосуда высокого давления; иidentifying the difference between the internal pressure inside the supercritical fluid capsule and the ambient pressure between the pressure vessel and the supercritical fluid capsule located inside the pressure vessel; and регулирование внутреннего давления или окружающего давления для по существу уравновешивания разности между внутренним давлением и окружающим давлением.adjusting the internal pressure or ambient pressure to substantially balance the difference between the internal pressure and the ambient pressure. 21. Способ по пункту 20, содержащий измерение смещения капсулы со сверхкритической текучей средой, вызванного разностью между внутренним давлением и окружающим давлением.21. The method of claim 20, comprising measuring the displacement of the supercritical fluid capsule caused by the difference between the internal pressure and the ambient pressure. 22. Способ изготовления аппарата, содержащий22. A method of manufacturing an apparatus comprising обеспечение высокопрочной оболочки;providing a high-strength shell; обеспечение капсулы, выполненной с возможностью размещения внутри высокопрочной оболочки, причем эта капсула выполнена с возможностью содержать вещество, включающее в себя сверхкритическую текучую среду;providing a capsule configured to fit within a high strength shell, the capsule being configured to contain a substance including a supercritical fluid; обеспечение нагревательного устройства, выполненного с возможностью размещения между высокопрочной оболочкой и капсулой; иproviding a heating device configured to be placed between the high-strength shell and the capsule; and обеспечение теплоизоляции, выполненной с возможностью размещения между высокопрочной оболочкой и нагревательным устройством. providing thermal insulation, made with the possibility of placement between the high-strength shell and the heating device.
RU2007132167/15A 2005-01-25 2005-10-19 Apparatus and methods for treatment of materials in supercritical fluid media RU2393008C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/042,858 2005-01-25
US11/042,858 US7704324B2 (en) 2005-01-25 2005-01-25 Apparatus for processing materials in supercritical fluids and methods thereof

Publications (2)

Publication Number Publication Date
RU2007132167A true RU2007132167A (en) 2009-03-10
RU2393008C2 RU2393008C2 (en) 2010-06-27

Family

ID=35708992

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2007132167/15A RU2393008C2 (en) 2005-01-25 2005-10-19 Apparatus and methods for treatment of materials in supercritical fluid media

Country Status (9)

Country Link
US (1) US7704324B2 (en)
EP (2) EP2295135A1 (en)
CN (1) CN101163540B (en)
DE (1) DE602005025533D1 (en)
PL (1) PL1846148T3 (en)
RU (1) RU2393008C2 (en)
TW (1) TW200630508A (en)
WO (1) WO2006080959A1 (en)
ZA (1) ZA200706103B (en)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003036771A1 (en) * 2001-10-26 2003-05-01 Ammono Sp.Zo.O. Nitride semiconductor laser element, and production method therefor
US20050227187A1 (en) * 2002-03-04 2005-10-13 Supercritical Systems Inc. Ionic fluid in supercritical fluid for semiconductor processing
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
TWI334890B (en) * 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
PL224991B1 (en) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością A substrate for epitaxy and a method of preparing the same
PL1769105T3 (en) 2004-06-11 2014-11-28 Ammono S A Bulk mono-crystalline gallium nitride and method for its preparation
US20060102282A1 (en) * 2004-11-15 2006-05-18 Supercritical Systems, Inc. Method and apparatus for selectively filtering residue from a processing chamber
PL371405A1 (en) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
US7558631B2 (en) * 2004-12-21 2009-07-07 Ebr Systems, Inc. Leadless tissue stimulation systems and methods
US20060185694A1 (en) * 2005-02-23 2006-08-24 Richard Brown Rinsing step in supercritical processing
US7767145B2 (en) * 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US20060225772A1 (en) * 2005-03-29 2006-10-12 Jones William D Controlled pressure differential in a high-pressure processing chamber
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
US20060225769A1 (en) * 2005-03-30 2006-10-12 Gentaro Goshi Isothermal control of a process chamber
US7494107B2 (en) * 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US20060223899A1 (en) * 2005-03-30 2006-10-05 Hillman Joseph T Removal of porogens and porogen residues using supercritical CO2
US20070000519A1 (en) * 2005-06-30 2007-01-04 Gunilla Jacobson Removal of residues for low-k dielectric materials in wafer processing
FR2891162B1 (en) 2005-09-28 2008-05-09 Commissariat Energie Atomique REACTOR AND PROCESS FOR TREATING MATERIAL IN A FLUID REACTION ENVIRONMENT
JP4766620B2 (en) * 2006-03-23 2011-09-07 日本碍子株式会社 Nitride single crystal manufacturing equipment
US20100095882A1 (en) * 2008-10-16 2010-04-22 Tadao Hashimoto Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
US8236267B2 (en) * 2008-06-04 2012-08-07 Sixpoint Materials, Inc. High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal
US9803293B2 (en) 2008-02-25 2017-10-31 Sixpoint Materials, Inc. Method for producing group III-nitride wafers and group III-nitride wafers
US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
JP4992703B2 (en) * 2007-12-25 2012-08-08 住友電気工業株式会社 Group III nitride semiconductor crystal growth method
TWI460322B (en) 2008-06-04 2014-11-11 Sixpoint Materials Inc Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2009149254A1 (en) * 2008-06-05 2009-12-10 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
WO2009151642A1 (en) 2008-06-12 2009-12-17 Sixpoint Materials, Inc. Method for testing group-iii nitride wafers and group iii-nitride wafers with test data
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US8124996B2 (en) * 2008-08-04 2012-02-28 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8323405B2 (en) * 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
WO2010025397A2 (en) * 2008-08-31 2010-03-04 Inductotherm Corp. Directional solidification of silicon by electric induction susceptor heating in a controlled environment
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
KR20110097813A (en) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals
WO2010060034A1 (en) 2008-11-24 2010-05-27 Sixpoint Materials, Inc. METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20100147210A1 (en) * 2008-12-12 2010-06-17 Soraa, Inc. high pressure apparatus and method for nitride crystal growth
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
CN101760772B (en) * 2009-12-30 2012-01-11 苏州纳维科技有限公司 Reaction unit for ammonia thermal growth of nitride
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
CN101905137B (en) * 2010-07-26 2015-10-14 中国计量学院 Inner and outer air pressure balanced reaction device of quartz tube
WO2012016033A1 (en) * 2010-07-28 2012-02-02 Momentive Performance Materials Inc. Apparatus for processing materials at high temperatures and pressures
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
RU2481886C2 (en) * 2010-11-18 2013-05-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Иркутский государственный университет путей сообщения" (ФГБОУ ВПО ИрГУПС) Multi-seat autoclave
TWI448803B (en) * 2010-12-31 2014-08-11 Altek Corp Water-proofing image-capturing apparatus
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
JP2012158481A (en) * 2011-01-29 2012-08-23 Soraa Inc Large-scale facility and method for producing gallium nitride boule by ammonothermal process
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US9488324B2 (en) 2011-09-02 2016-11-08 Soraa, Inc. Accessories for LED lamp systems
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
JP5527344B2 (en) * 2012-03-21 2014-06-18 住友電気工業株式会社 Group III nitride semiconductor crystal growth method and group III nitride semiconductor crystal growth apparatus
US8985794B1 (en) 2012-04-17 2015-03-24 Soraa, Inc. Providing remote blue phosphors in an LED lamp
EP2851456A1 (en) 2012-04-20 2015-03-25 II-VI Incorporated Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
WO2013157014A1 (en) 2012-04-20 2013-10-24 Tata Institute Of Fundamental Research Group iii-nitride semiconducting material and a method of manufacturing the same
US10145026B2 (en) 2012-06-04 2018-12-04 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
CN102910597A (en) * 2012-10-31 2013-02-06 中信锦州金属股份有限公司 Method for increasing nitriding quantity of manganese nitride in nitride smelting process
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
US9650723B1 (en) 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
CN103920428B (en) * 2014-04-24 2016-08-24 新奥科技发展有限公司 Supercritical reaction apparatus and process thereof
CN104536494A (en) * 2014-11-11 2015-04-22 新奥科技发展有限公司 Control method of supercritical processing system
US10094017B2 (en) 2015-01-29 2018-10-09 Slt Technologies, Inc. Method and system for preparing polycrystalline group III metal nitride
ITUB20153441A1 (en) * 2015-09-07 2017-03-07 Ghizzoni D S R L SEPARATOR COMPARTMENT POSITIONABLE WITHIN A CYLINDRICAL-FORM AUTOCLAVE WITH BALANCED PRESSURE
US10288559B2 (en) * 2017-03-03 2019-05-14 Honeywell International Inc. Gas concentration sensor with improved accuracy
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
CN109750356A (en) * 2019-03-29 2019-05-14 上海玺唐半导体科技有限公司 Growing method for the device and material of growth material in supercritical fluid
CN109930202A (en) * 2019-04-02 2019-06-25 四川航空工业川西机器有限责任公司 A kind of suitable ammonia heat method generates the heat isostatic apparatus of gallium nitride single crystal product
CN115104174A (en) 2020-02-11 2022-09-23 Slt科技公司 Improved III-nitride substrates, methods of making and methods of using
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
CN111992137A (en) * 2020-09-04 2020-11-27 广州绿和缘生物科技有限公司 Horizontal supercritical fluid high-pressure kettle and equipment thereof
US20230258484A1 (en) * 2022-02-16 2023-08-17 The Boeing Company Systems and methods for concurrently exposing a test specimen to a first environment and a second environment
US20240026563A1 (en) 2022-07-20 2024-01-25 Slt Technologies, Inc. Compound internally-heated high-pressure apparatus for solvothermal crystal growth
CN116716655B (en) * 2023-06-14 2024-04-02 通威微电子有限公司 Device and method for growing high-quality silicon carbide crystal and silicon carbide crystal

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US140845A (en) * 1873-07-15 Improvement in cigar-machines
US141301A (en) * 1873-07-29 Improvement in current-wheels
US1879278A (en) 1931-09-01 1932-09-27 Peters Cartridge Company Cartridge
US1986196A (en) 1933-05-04 1935-01-01 Universal Oil Prod Co Apparatus for conducting reactions at elevated pressures
US2544414A (en) 1946-11-22 1951-03-06 Norton Co High-pressure apparatus
US2785058A (en) 1952-04-28 1957-03-12 Bell Telephone Labor Inc Method of growing quartz crystals
US2745713A (en) 1952-10-29 1956-05-15 Gen Electric High temperature high pressure reactor
US2895812A (en) 1954-07-28 1959-07-21 Bell Telephone Labor Inc Growing of quartz crystals
US2941241A (en) 1955-02-14 1960-06-21 Gen Electric High temperature high pressure apparatus
US2947609A (en) 1958-01-06 1960-08-02 Gen Electric Diamond synthesis
US2947610A (en) 1958-01-06 1960-08-02 Gen Electric Method of making diamonds
US3101259A (en) 1959-03-27 1963-08-20 Sawyer Res Products Inc Method of controlling deposition of crystalline material from solution on a seed by use of a temperature profile curve
US3013867A (en) 1959-03-27 1961-12-19 Sawyer Res Products Inc Production of artificial crystals
US3061877A (en) 1959-11-05 1962-11-06 Adamant Lab Proprietary Ltd High-pressure die
US3107395A (en) 1959-11-27 1963-10-22 Gen Electric High pressure high temperature apparatus
US3030662A (en) 1961-05-24 1962-04-24 Gen Electric Pressure distribution in reaction vessels
US3088170A (en) 1961-08-02 1963-05-07 Gen Electric Two-terminal end cap for high pressure, high temperature reaction vessels
US3567643A (en) 1964-02-18 1971-03-02 Union Carbide Corp Hydrothermal process for growing crystals having the structure of beryl in an acid halide medium
US3313004A (en) 1965-06-14 1967-04-11 Fred W Vahldiek High pressure electrical resistance cell
US3473935A (en) 1965-08-18 1969-10-21 Wayne D Wilson Synthesis of beryl
US3607014A (en) 1968-12-09 1971-09-21 Dow Chemical Co Method for preparing aluminum nitride and metal fluoride single crystals
BE756471A (en) 1969-09-24 1971-03-01 Intel Corp PROCESS AND APPARATUS FOR PROCESSING SEMICONDUCTOR MATERIALS
US3913212A (en) 1972-12-15 1975-10-21 Bell Telephone Labor Inc Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
US3933573A (en) 1973-11-27 1976-01-20 The United States Of America As Represented By The Secretary Of The Air Force Aluminum nitride single crystal growth from a molten mixture with calcium nitride
IT1015665B (en) * 1974-07-04 1977-05-20 Snam Progetti METHOD FOR THE PREPARATION IN WITH TINUE OF WATER OIL EMULSIONS AND EQUIPMENT SUITABLE FOR THE PURPOSE
FR2319896A1 (en) 1975-07-31 1977-02-25 Anvar CALORIMETER FOR MEASUREMENT UNDER PRESSURES EXCEEDING THE KILOBAR
US4170320A (en) * 1977-11-14 1979-10-09 Eagar Lee J Beverage container
US4202930A (en) 1978-02-10 1980-05-13 Allied Chemical Corporation Lanthanum indium gallium garnets
EP0032545B1 (en) 1979-12-20 1985-02-20 F. D. International Ltd. Process and device for transforming material using high pressures and temperatures
US4463872A (en) * 1981-02-13 1984-08-07 National Nuclear Corporation Limited Pressure vessels
US4379725A (en) * 1982-02-08 1983-04-12 Kemp Willard E Process for hot isostatic pressing of a metal workpiece
US4699084A (en) 1982-12-23 1987-10-13 The United States Of America As Represented By The Secretary Of The Army Apparatus for producing high quality epitaxially grown semiconductors
US4523478A (en) 1983-08-18 1985-06-18 Nusonics, Inc. Sonic flow meter having improved flow straighteners
JPS6091062A (en) 1983-10-21 1985-05-22 Kobe Steel Ltd High temperature high pressure container
JPS60122797A (en) 1983-12-07 1985-07-01 Toshiba Corp Production of aluminum nitride single crystal
EP0152726A1 (en) 1984-02-13 1985-08-28 F.D. International Ltd. Pressure vessel for high-pressure apparatus
US4632817A (en) 1984-04-04 1986-12-30 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
JPS61215295A (en) 1985-03-18 1986-09-25 Shinichi Hirano Production of calcium carbonate single crystal
EP0220462B1 (en) 1985-09-24 1990-09-19 Sumitomo Electric Industries, Ltd. Method of synthesizing cubic system boron nitride
US4762823A (en) 1985-10-16 1988-08-09 Sloan-Kettering Institute For Cancer Research Nucleosides of 5-monofluoromethyluracil and 5-difluoromethyluracil
US4961823A (en) 1985-11-12 1990-10-09 Shinichi Hirano Method of manufacturing calcium carbonate single crystal
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4891165A (en) 1988-07-28 1990-01-02 Best Industries, Inc. Device and method for encapsulating radioactive materials
US4910403A (en) 1988-11-02 1990-03-20 Flow Vision, Inc. Sampling flow cell with diamond window
US5169486A (en) * 1991-03-06 1992-12-08 Bestal Corporation Crystal growth apparatus and process
US5236674A (en) 1992-01-28 1993-08-17 Frushour Robert H High pressure reaction vessel
DE4413423A1 (en) 1994-04-18 1995-10-19 Paar Anton Kg Appts. for decomposition of substances, esp. unknown samples for analysis
JP3810116B2 (en) 1996-02-05 2006-08-16 電気化学工業株式会社 Ultra-high pressure high temperature generator and cBN synthesis method
JPH105572A (en) 1996-06-27 1998-01-13 Sumitomo Electric Ind Ltd Method and device for synthesizing diamond crystal
US5911824A (en) 1997-12-16 1999-06-15 Saint-Gobain Industrial Ceramics, Inc. Method for growing crystal
US5868837A (en) 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
DE19702465A1 (en) 1997-01-24 1998-07-30 Heraeus Gmbh W C Crucibles for single crystal growth, process for its production and its use
JP3366820B2 (en) * 1997-02-19 2003-01-14 株式会社日立製作所 Oxidation treatment method and apparatus and reaction vessel
PL186905B1 (en) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Method of producing high-resistance volumetric gan crystals
GB2333520B (en) 1997-06-11 2000-04-26 Hitachi Cable GaN crystal growth method
JP3622440B2 (en) 1997-08-18 2005-02-23 日立電線株式会社 Method for growing nitride crystal and method for growing GaN crystal
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US5902396A (en) 1997-11-05 1999-05-11 The United States Of America As Represented By The Secretary Of The Navy Ammonothermal growth of chalcogenide single crystal materials
US5942148A (en) 1997-12-24 1999-08-24 Preston; Kenneth G. Nitride compacts
US6177057B1 (en) 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
JP2000277521A (en) 1999-03-26 2000-10-06 Kobe Steel Ltd Method and apparatus of high-temperature high-pressure treatment for semiconductor wafer
US7264698B2 (en) 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6113985A (en) 1999-04-27 2000-09-05 The United States Of America As Represented By Secretary Of The Air Force Process for the manufacture of group III nitride targets for use in sputtering and similar equipment
US6406540B1 (en) 1999-04-27 2002-06-18 The United States Of America As Represented By The Secretary Of The Air Force Process and apparatus for the growth of nitride materials
US6592663B1 (en) 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP4011828B2 (en) 1999-06-09 2007-11-21 株式会社リコー Method for crystal growth of group III nitride crystal and method for manufacturing group III nitride crystal
FR2796657B1 (en) 1999-07-20 2001-10-26 Thomson Csf PROCESS FOR THE SYNTHESIS OF SOLID MONOCRYSTALLINE MATERIALS IN NITRIDES OF ELEMENTS OF COLUMN III OF THE TABLE OF THE PERIODIC CLASSIFICATION
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
DE19955260B4 (en) 1999-11-17 2004-07-01 Strecon A/S High pressure tool
EP1333112A4 (en) 2000-10-13 2004-05-19 Japan Science & Tech Corp Single crystal of nitride containing metal element of group iii or iv and method for preparing the same
KR100831751B1 (en) 2000-11-30 2008-05-23 노쓰 캐롤라이나 스테이트 유니버시티 Methods and apparatus for producing ?'? based materials
US6375446B1 (en) 2000-12-19 2002-04-23 General Electric Company High pressure apparatus having transition slope binding ring that mitigates tensile stresses and corresponding method
TWI230685B (en) 2001-01-04 2005-04-11 Univ Nat Cheng Kung Method and apparatus for synthesizing aluminium nitride
CA2436418A1 (en) 2001-01-30 2002-08-08 Board Of Regents, The University Of Texas Systems Process for production of nanoparticles and microparticles by spray freezing into liquid
NZ532759A (en) 2001-10-10 2005-10-28 Boehringer Ingelheim Pharma Powder processing with pressurized gaseous fluids
US6861130B2 (en) 2001-11-02 2005-03-01 General Electric Company Sintered polycrystalline gallium nitride and its production
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP2003176197A (en) 2001-12-07 2003-06-24 Tokyo Denpa Co Ltd Single crystal growing vessel
US7097707B2 (en) 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US20030140845A1 (en) * 2002-01-31 2003-07-31 General Electric Company Pressure vessel
US7125453B2 (en) 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US6676752B1 (en) 2002-02-26 2004-01-13 The United States Of America As Represented By The Secretary Of The Air Force Forming metal nitrides
US7063741B2 (en) 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
US20030209191A1 (en) 2002-05-13 2003-11-13 Purdy Andrew P. Ammonothermal process for bulk synthesis and growth of cubic GaN
JP2004066108A (en) 2002-08-06 2004-03-04 Erutekkusu:Kk High temperature high pressure treatment device
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
US7314517B2 (en) 2002-12-11 2008-01-01 Ammono Sp. Z.O.O. Process for obtaining bulk mono-crystalline gallium-containing nitride
US7101433B2 (en) 2002-12-18 2006-09-05 General Electric Company High pressure/high temperature apparatus with improved temperature control for crystal growth
US20040173140A1 (en) * 2003-03-05 2004-09-09 Liu Xiao Gordon Apparatus and method for balanced pressure growth of Group III-V monocrystalline semiconductor compounds
US7323256B2 (en) 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
JP4579294B2 (en) 2004-06-11 2010-11-10 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン High electron mobility transistor (HEMT) manufactured from group 13 element nitride layer and method of manufacturing the same

Also Published As

Publication number Publication date
TW200630508A (en) 2006-09-01
WO2006080959A1 (en) 2006-08-03
US20060177362A1 (en) 2006-08-10
CN101163540A (en) 2008-04-16
EP1846148B1 (en) 2010-12-22
EP1846148A1 (en) 2007-10-24
DE602005025533D1 (en) 2011-02-03
CN101163540B (en) 2011-04-13
US7704324B2 (en) 2010-04-27
RU2393008C2 (en) 2010-06-27
ZA200706103B (en) 2009-02-25
PL1846148T3 (en) 2011-05-31
EP2295135A1 (en) 2011-03-16

Similar Documents

Publication Publication Date Title
RU2007132167A (en) DEVICE FOR PROCESSING MATERIALS IN SUPERCRITICAL FLUIDS AND ITS METHODS
US10145021B2 (en) Apparatus for processing materials at high temperatures and pressures
CN102288634B (en) Thermal physical property measuring device
Tang et al. Dehydration dynamics of potatoes in superheated steam and hot air
JP7295931B2 (en) Apparatus and method for developing lyophilization protocols with small batches of product
KR20040078682A (en) Improved pressure vessel
CA3111207A1 (en) Partial vacuum drying system and method
CN106929408A (en) Portable micro-fluidic PCR instrument and gene samples fluorescence quantitative detecting method
KR101176430B1 (en) Method and system for determining the gas pressure in evacuated bodies
JP5985398B2 (en) Temperature controller for thermal analysis test
RU2005131077A (en) METHOD FOR SIMULATING EXTERNAL HEAT FLOWS FOR GROUND WORK OF HEAT MODE OF SPACE VEHICLES
CA2743477A1 (en) Instruments and method for exposing a receptacle to multiple thermal zones
US10215723B2 (en) System for determining the adiabatic stress derivative of temperature for rock
CN108760466A (en) A kind of elevated temperature strength strain measurement system based on Material Testing Machine
JP5143897B2 (en) DSC measuring device for large array type differential scanning calorimeter
RU2287788C2 (en) Calorimeter
TW202303104A (en) Mitigating thermal expansion mismatch in temperature probe construction apparatus and method
CN110057634A (en) A kind of device and method manufacturing rock core crack
CN106383214A (en) Heat insulation device and temperature control regulation device used for friction sensitivity tester
CN113588133B (en) NMP heat pipe temperature source comparison device and implementation method
CN1475301A (en) Constant temperature heat insulating dual purpose reactor
CN205684059U (en) Can the test tube of thermometric
SU1334007A1 (en) Apparatus for lyophil drying of thermosensitive materials
SU1404858A1 (en) Device for testing pipe joints for leak-proofness at temperature effects
RU2010213C1 (en) Bed for temperature testing of articles for strength

Legal Events

Date Code Title Description
PC41 Official registration of the transfer of exclusive right

Effective date: 20170814

PC41 Official registration of the transfer of exclusive right

Effective date: 20171002

PC41 Official registration of the transfer of exclusive right

Effective date: 20180510

MM4A The patent is invalid due to non-payment of fees

Effective date: 20201020