RU2004125910A - MICROBAND STABILIZED RESONANT-TUNNEL ELECTROMAGNETIC WAVE GENERATOR FOR MILLIMETER AND SUBMILLIMETER RANGE OF WAVE LENGTH - Google Patents

MICROBAND STABILIZED RESONANT-TUNNEL ELECTROMAGNETIC WAVE GENERATOR FOR MILLIMETER AND SUBMILLIMETER RANGE OF WAVE LENGTH Download PDF

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Publication number
RU2004125910A
RU2004125910A RU2004125910/09A RU2004125910A RU2004125910A RU 2004125910 A RU2004125910 A RU 2004125910A RU 2004125910/09 A RU2004125910/09 A RU 2004125910/09A RU 2004125910 A RU2004125910 A RU 2004125910A RU 2004125910 A RU2004125910 A RU 2004125910A
Authority
RU
Russia
Prior art keywords
microstrip
millimeter
resonant tunnel
generator
stabilized
Prior art date
Application number
RU2004125910/09A
Other languages
Russian (ru)
Other versions
RU2337467C2 (en
Inventor
Игорь Петрович Казаков (RU)
Игорь Петрович Казаков
Александр Львович Карузский (RU)
Александр Львович Карузский
гин Юрий Алексеевич Мит (RU)
Юрий Алексеевич Митягин
Владимир Николаевич Мурзин (RU)
Владимир Николаевич Мурзин
Андрей Михайлович Цховребов (RU)
Андрей Михайлович Цховребов
Original Assignee
Самсунг Электроникс Ко., Лтд (KR)
Самсунг Электроникс Ко., Лтд
Физический институт им. П.Н. Лебедева Российской академии наук (RU)
Физический институт им. П.Н. Лебедева Российской академии наук
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Самсунг Электроникс Ко., Лтд (KR), Самсунг Электроникс Ко., Лтд, Физический институт им. П.Н. Лебедева Российской академии наук (RU), Физический институт им. П.Н. Лебедева Российской академии наук filed Critical Самсунг Электроникс Ко., Лтд (KR)
Priority to RU2004125910/09A priority Critical patent/RU2337467C2/en
Priority to KR1020050062965A priority patent/KR100675354B1/en
Priority to US11/210,751 priority patent/US7274263B2/en
Priority to JP2005244082A priority patent/JP5129443B2/en
Publication of RU2004125910A publication Critical patent/RU2004125910A/en
Application granted granted Critical
Publication of RU2337467C2 publication Critical patent/RU2337467C2/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/08Strip line resonators
    • H01P7/082Microstripline resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/02Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08Microstrips; Strip lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/12Hollow waveguides
    • H01P3/121Hollow waveguides integrated in a substrate

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguide Aerials (AREA)

Claims (4)

1. Микрополосковый стабилизированный резонансно-туннельный генератор электромагнитных волн миллиметрового и субмиллиметрового диапазона длин волн, включающий полупроводниковый резонансно-туннельный диод, микрополосковый резонатор и систему соединительных линий и контактов, отличающийся тем, что резонансно-туннельный диод и микрополосковый резонатор выполнены в монолитно-интегрированном виде на общей подложке.1. The microstrip stabilized resonant tunnel generator of electromagnetic waves of millimeter and submillimeter wavelengths, including a semiconductor resonant tunnel diode, microstrip resonator and a system of connecting lines and contacts, characterized in that the resonant tunnel diode and microstrip resonator are made in a monolithic integrated form on a common substrate. 2. Микрополосковый стабилизированный резонансно-туннельный генератор электромагнитных волн миллиметрового и субмиллиметрового диапазона длин волн по п.1, отличающийся тем, что на одной стороне общей подложки сформированы проводящие микрополосковые линии, а на другой - заземленный экран, а сама подложка является диэлектрической пластиной микрополоскового резонатора.2. The microstrip stabilized resonant tunnel generator of electromagnetic waves of millimeter and submillimeter wavelengths according to claim 1, characterized in that conductive microstrip lines are formed on one side of the common substrate and a grounded screen on the other, and the substrate itself is a dielectric plate of the microstrip resonator . 3. Микрополосковый стабилизированный резонансно-туннельный генератор электромагнитных волн миллиметрового и субмиллиметрового диапазона длин волн по п.1 или 2, отличающийся тем, что, с целью повышения мощности генератора, несколько резонансно-туннельных диодов, соединенных микрополосковыми линиями, располагаются на одной подложке в конфигурации, обеспечивающей оптимальные фазовые соотношения для генерируемой электромагнитной волны.3. The microstrip stabilized resonant tunnel generator of electromagnetic waves of millimeter and submillimeter wavelengths according to claim 1 or 2, characterized in that, in order to increase the power of the generator, several resonant tunnel diodes connected by microstrip lines are located on the same substrate in the configuration providing optimal phase relationships for the generated electromagnetic wave. 4. Микрополосковый стабилизированный резонансно-туннельный генератор электромагнитных волн миллиметрового и субмиллиметрового диапазона длин волн по п.1 или 2, отличающийся тем, что, с целью понижения порога генерации и увеличения мощности генерации, проводящие элементы микрополоскового резонатора выполнены из сверхпроводящего материала.4. The microstrip stabilized resonant tunnel generator of electromagnetic waves of millimeter and submillimeter wavelengths according to claim 1 or 2, characterized in that, in order to lower the generation threshold and increase the generation power, the conductive elements of the microstrip resonator are made of superconducting material.
RU2004125910/09A 2004-08-25 2004-08-25 Microstrip stabilised resonant-tunneling generator of electromagnet waves for millimeter and submillimeter range of wavelengths RU2337467C2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
RU2004125910/09A RU2337467C2 (en) 2004-08-25 2004-08-25 Microstrip stabilised resonant-tunneling generator of electromagnet waves for millimeter and submillimeter range of wavelengths
KR1020050062965A KR100675354B1 (en) 2004-08-25 2005-07-12 Microstrip stabilized quantum well resonance-tunneling generator for millimeter and submillimeter wave-length range
US11/210,751 US7274263B2 (en) 2004-08-25 2005-08-25 Microstrip stabilized quantum well resonance-tunneling generator for millimeter and submillimeter wavelength range
JP2005244082A JP5129443B2 (en) 2004-08-25 2005-08-25 Microstrip for stabilizing quantum well resonant tunnel generators generating millimeter and submillimeter wave electromagnetic waves

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2004125910/09A RU2337467C2 (en) 2004-08-25 2004-08-25 Microstrip stabilised resonant-tunneling generator of electromagnet waves for millimeter and submillimeter range of wavelengths

Publications (2)

Publication Number Publication Date
RU2004125910A true RU2004125910A (en) 2006-02-20
RU2337467C2 RU2337467C2 (en) 2008-10-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2004125910/09A RU2337467C2 (en) 2004-08-25 2004-08-25 Microstrip stabilised resonant-tunneling generator of electromagnet waves for millimeter and submillimeter range of wavelengths

Country Status (2)

Country Link
KR (1) KR100675354B1 (en)
RU (1) RU2337467C2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216640A (en) 1993-01-19 1994-08-05 Fujitsu Ltd High frequency circuit
JP2002135056A (en) 2000-10-30 2002-05-10 Kyocera Corp High-frequency diode oscillator and millimeter wave transmitter/receiver using the same
KR20020061200A (en) * 2001-01-15 2002-07-24 엔알디 주식회사 Local oscillator using non-radiative dielectric waveguide
KR100587901B1 (en) * 2002-08-10 2006-06-08 엔알디테크 주식회사 NRD Guide Gunn Oscillator and Frequency Locking Method using Ceramic Resonator

Also Published As

Publication number Publication date
KR100675354B1 (en) 2007-01-30
KR20060050103A (en) 2006-05-19
RU2337467C2 (en) 2008-10-27

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