RU2004100917A - POWER-FREE VOLTAGE MODULE WITH INCREASED INSULATION VOLTAGE - Google Patents

POWER-FREE VOLTAGE MODULE WITH INCREASED INSULATION VOLTAGE Download PDF

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Publication number
RU2004100917A
RU2004100917A RU2004100917/09A RU2004100917A RU2004100917A RU 2004100917 A RU2004100917 A RU 2004100917A RU 2004100917/09 A RU2004100917/09 A RU 2004100917/09A RU 2004100917 A RU2004100917 A RU 2004100917A RU 2004100917 A RU2004100917 A RU 2004100917A
Authority
RU
Russia
Prior art keywords
voltage
board
module
power
ceramic
Prior art date
Application number
RU2004100917/09A
Other languages
Russian (ru)
Other versions
RU2274928C2 (en
Inventor
Алексей Тимофеевич Бормотов (RU)
Алексей Тимофеевич Бормотов
В чеслав Васильевич Елисеев (RU)
Вячеслав Васильевич Елисеев
Валентин Александрович Мартыненко (RU)
Валентин Александрович Мартыненко
В чеслав Геннадьевич Мускатиньев (RU)
Вячеслав Геннадьевич Мускатиньев
Владимир Васильевич Чибиркин (RU)
Владимир Васильевич Чибиркин
Original Assignee
ОАО "Электровыпр митель" (RU)
ОАО "Электровыпрямитель"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ОАО "Электровыпр митель" (RU), ОАО "Электровыпрямитель" filed Critical ОАО "Электровыпр митель" (RU)
Priority to RU2004100917/09A priority Critical patent/RU2274928C2/en
Priority to PCT/RU2004/000532 priority patent/WO2005065064A2/en
Publication of RU2004100917A publication Critical patent/RU2004100917A/en
Application granted granted Critical
Publication of RU2274928C2 publication Critical patent/RU2274928C2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Junction Field-Effect Transistors (AREA)

Claims (1)

Силовой беспотенциальный модуль с повышенным напряжением изоляции, состоящий из основания, выводов, корпуса, керамической платы с закрепленным на ней полупроводниковым элементом, отличающийся тем, что между этой платой и основанием последовательно размещаются определенное количество металлокерамических плат (1, 2, 3... n) и термокомпенсатор, который одной своей контактной поверхностью соединен с нижней металлокерамической платой, а другой поверхностью с основанием модуля, при этом размеры рабочей поверхности термокомпенсатора повторяют размеры металлизации контактируемой с ним металлокерамической платы, а толщина термокомпенсатора должна быть не менее длины изоляционного промежутка от края нижней платы до края ее металлизации.Potential-free potential module with increased insulation voltage, consisting of a base, terminals, case, ceramic board with a semiconductor element fixed to it, characterized in that a certain number of ceramic-metal boards are sequentially placed between this board and the base (1, 2, 3 ... n ) and a temperature compensator, which is connected with the lower cermet plate with one contact surface and the module base with another surface, while the dimensions of the working surface of the temperature compensator are repeated the metallization size of the ceramic-metal board in contact with it, and the thickness of the thermal compensator should be not less than the length of the insulating gap from the edge of the bottom board to the edge of its metallization.
RU2004100917/09A 2004-01-09 2004-01-09 No-potential power module of enhanced insulating voltage RU2274928C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
RU2004100917/09A RU2274928C2 (en) 2004-01-09 2004-01-09 No-potential power module of enhanced insulating voltage
PCT/RU2004/000532 WO2005065064A2 (en) 2004-01-09 2004-12-29 Power potential-free module having a high insulation voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2004100917/09A RU2274928C2 (en) 2004-01-09 2004-01-09 No-potential power module of enhanced insulating voltage

Publications (2)

Publication Number Publication Date
RU2004100917A true RU2004100917A (en) 2005-06-20
RU2274928C2 RU2274928C2 (en) 2006-04-20

Family

ID=34748274

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2004100917/09A RU2274928C2 (en) 2004-01-09 2004-01-09 No-potential power module of enhanced insulating voltage

Country Status (2)

Country Link
RU (1) RU2274928C2 (en)
WO (1) WO2005065064A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2740028C1 (en) * 2020-03-19 2020-12-30 Акционерное общество "Научно-производственное предприятие "Пульсар" Potential-free power module housing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1396181A1 (en) * 1986-07-02 1988-05-15 Специальное Проектно-Конструкторское И Технологическое Бюро Полупроводниковой Техники С Опытным Заводом Solid-state power module
SU1756978A1 (en) * 1990-08-21 1992-08-23 Всесоюзный Электротехнический Институт Им.В.И.Ленина Semiconductor module
RU2030023C1 (en) * 1992-02-07 1995-02-27 Борис Вениаминович Нефедов Semiconductor converter
RU2058622C1 (en) * 1993-04-22 1996-04-20 Василий Васильевич Платонов Rectifier for testing plant
DE19719648A1 (en) * 1997-05-09 1998-11-12 Abb Daimler Benz Transp Power converter modules with a busbar system for power semiconductor switches

Also Published As

Publication number Publication date
RU2274928C2 (en) 2006-04-20
WO2005065064A3 (en) 2005-10-27
WO2005065064A2 (en) 2005-07-21

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