RU2002102040A - A method of manufacturing high-power microwave transistors and integrated circuits with a high drain voltage from ion-doped GaAs structures using atomic hydrogen treatment - Google Patents
A method of manufacturing high-power microwave transistors and integrated circuits with a high drain voltage from ion-doped GaAs structures using atomic hydrogen treatmentInfo
- Publication number
- RU2002102040A RU2002102040A RU2002102040/28A RU2002102040A RU2002102040A RU 2002102040 A RU2002102040 A RU 2002102040A RU 2002102040/28 A RU2002102040/28 A RU 2002102040/28A RU 2002102040 A RU2002102040 A RU 2002102040A RU 2002102040 A RU2002102040 A RU 2002102040A
- Authority
- RU
- Russia
- Prior art keywords
- atomic hydrogen
- ion
- integrated circuits
- power microwave
- doped gaas
- Prior art date
Links
- YZCKVEUIGOORGS-UHFFFAOYSA-N hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 title claims 4
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000000137 annealing Methods 0.000 claims 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2002102040/28A RU2227344C2 (en) | 2002-01-21 | 2002-01-21 | Process of manufacture of high-power shf field-effect transistors with schottky barrier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2002102040/28A RU2227344C2 (en) | 2002-01-21 | 2002-01-21 | Process of manufacture of high-power shf field-effect transistors with schottky barrier |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2002102040A true RU2002102040A (en) | 2003-09-27 |
RU2227344C2 RU2227344C2 (en) | 2004-04-20 |
Family
ID=32464958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2002102040/28A RU2227344C2 (en) | 2002-01-21 | 2002-01-21 | Process of manufacture of high-power shf field-effect transistors with schottky barrier |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2227344C2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2465682C1 (en) * | 2011-06-29 | 2012-10-27 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") | Method to manufacture microwave field transistor with schottky barrier |
RU2742787C1 (en) * | 2020-10-05 | 2021-02-10 | Акционерное общество "Машиностроительное конструкторское бюро "Факел" имени Академика П.Д. Грушина" | Guided projectile |
-
2002
- 2002-01-21 RU RU2002102040/28A patent/RU2227344C2/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR950003941B1 (en) | Tft and making method thereof | |
TW428231B (en) | Manufacturing method of self-aligned silicide | |
JPH01501189A (en) | Method of forming MOS integrated circuit | |
Wang et al. | Germanium n+/p shallow junction with record rectification ratio formed by low-temperature preannealing and excimer laser annealing | |
KR980005412A (en) | Ultra Low Junction Formation Method for Semiconductor Devices | |
CN105047539A (en) | Method for improving channel mobility of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) | |
RU2002102040A (en) | A method of manufacturing high-power microwave transistors and integrated circuits with a high drain voltage from ion-doped GaAs structures using atomic hydrogen treatment | |
CN101661885B (en) | Annealing treatment method for thinned or scribed gallium nitride base field-effect tube | |
WO2023169592A1 (en) | Mosfet device and manufacturing method therefor | |
KR970053884A (en) | A method for manufacturing a semiconductor integrated circuit device capable of independently forming a MOS transistor | |
CN105280503A (en) | Method for improving channel mobility of transverse conducting structure SiC MOSFET | |
JPH1167682A (en) | Manufacture of semiconductor device | |
TW200524055A (en) | High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer | |
CN1832114A (en) | Substrate process method for improving high K-grid medium MOS transistor performance | |
CN105161526A (en) | Method for improving vertical-conductive structured SiC MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) channel mobility | |
CN108428628B (en) | Manufacturing method capable of reducing grid resistance of power MOS device | |
KR100192364B1 (en) | Method of manufacturing mosfet | |
JPH0346371A (en) | Manufacture of semiconductor device | |
KR100617053B1 (en) | Method for Forming Transistor Of Semi-conductor Device | |
KR960006702B1 (en) | Contact resistance decreasing method of semiconductor device | |
KR100947746B1 (en) | Semiconductor device and method for fabricating the same | |
TW426968B (en) | Fabrication method of metal oxide semiconductor transistor used in semiconductor wafer | |
KR970003447A (en) | Annealing method of source / drain regions of MOS transistors | |
JPH11312812A (en) | Manufacture of thin-film transistor | |
KR20000021070A (en) | Method for forming mos transistors |