RU2002102040A - A method of manufacturing high-power microwave transistors and integrated circuits with a high drain voltage from ion-doped GaAs structures using atomic hydrogen treatment - Google Patents

A method of manufacturing high-power microwave transistors and integrated circuits with a high drain voltage from ion-doped GaAs structures using atomic hydrogen treatment

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Publication number
RU2002102040A
RU2002102040A RU2002102040/28A RU2002102040A RU2002102040A RU 2002102040 A RU2002102040 A RU 2002102040A RU 2002102040/28 A RU2002102040/28 A RU 2002102040/28A RU 2002102040 A RU2002102040 A RU 2002102040A RU 2002102040 A RU2002102040 A RU 2002102040A
Authority
RU
Russia
Prior art keywords
atomic hydrogen
ion
integrated circuits
power microwave
doped gaas
Prior art date
Application number
RU2002102040/28A
Other languages
Russian (ru)
Other versions
RU2227344C2 (en
Inventor
Алексей Владимирович Голиков
Валерий Алексеевич Кагадей
Дмитрий Ильич Проскуровский
Лариса Михайловна Ромась
Людмила Сергеевна Широкова
Original Assignee
Федеральное государственное унитарное предприятие "НИИПП"
Filing date
Publication date
Application filed by Федеральное государственное унитарное предприятие "НИИПП" filed Critical Федеральное государственное унитарное предприятие "НИИПП"
Priority to RU2002102040/28A priority Critical patent/RU2227344C2/en
Priority claimed from RU2002102040/28A external-priority patent/RU2227344C2/en
Publication of RU2002102040A publication Critical patent/RU2002102040A/en
Application granted granted Critical
Publication of RU2227344C2 publication Critical patent/RU2227344C2/en

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Claims (5)

1. Способ изготовления мощных СВЧ полевых транзисторов с барьером Шоттки и интегральных схем с высоким пробивным напряжением стока из ионно-легированной структуры GaAs, включающий операции ионного легирования и высокотемпературного отжига, отличающийся тем, что после легирования и высокотемпературного отжига проводят обработку структуры в атомарном водороде и выполняют низкотемпературный отжиг.1. A method of manufacturing high-power microwave field-effect transistors with a Schottky barrier and integrated circuits with a high breakdown voltage drain from an ion-doped GaAs structure, including operations of ion doping and high-temperature annealing, characterized in that after doping and high-temperature annealing, the structure is processed in atomic hydrogen and perform low temperature annealing. 2. Способ по п.1, отличающийся тем, что обработку структуры в атомарном водороде проводят при температуре 100-200°С в течение 20-120 мин.2. The method according to claim 1, characterized in that the processing of the structure in atomic hydrogen is carried out at a temperature of 100-200 ° C for 20-120 minutes 3. Способ по п.1, отличающийся тем, что низкотемпературный отжиг проводят при температуре 400-475°С в течение 5-20 мин.3. The method according to claim 1, characterized in that the low-temperature annealing is carried out at a temperature of 400-475 ° C for 5-20 minutes 4. Способ по п.1, отличающийся тем, что после легирования и высокотемпературного отжига наносят диэлектрическую пленку, прозрачную для проникновения водорода и затем проводят обработку в атомарном водороде.4. The method according to claim 1, characterized in that after doping and high-temperature annealing, a dielectric film is applied that is transparent to the penetration of hydrogen and then treated in atomic hydrogen. 5. Способ по п.4, отличающийся тем, что диэлектрическую пленку выполняют из SiO2 толщиной d=3-15 нм.5. The method according to claim 4, characterized in that the dielectric film is made of SiO 2 with a thickness of d = 3-15 nm.
RU2002102040/28A 2002-01-21 2002-01-21 Process of manufacture of high-power shf field-effect transistors with schottky barrier RU2227344C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2002102040/28A RU2227344C2 (en) 2002-01-21 2002-01-21 Process of manufacture of high-power shf field-effect transistors with schottky barrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2002102040/28A RU2227344C2 (en) 2002-01-21 2002-01-21 Process of manufacture of high-power shf field-effect transistors with schottky barrier

Publications (2)

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RU2002102040A true RU2002102040A (en) 2003-09-27
RU2227344C2 RU2227344C2 (en) 2004-04-20

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Family Applications (1)

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RU2002102040/28A RU2227344C2 (en) 2002-01-21 2002-01-21 Process of manufacture of high-power shf field-effect transistors with schottky barrier

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RU (1) RU2227344C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2465682C1 (en) * 2011-06-29 2012-10-27 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Method to manufacture microwave field transistor with schottky barrier
RU2742787C1 (en) * 2020-10-05 2021-02-10 Акционерное общество "Машиностроительное конструкторское бюро "Факел" имени Академика П.Д. Грушина" Guided projectile

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