RU2001110372A - MEMORY FLASH MEMORY WITH INTERNAL UPDATE - Google Patents
MEMORY FLASH MEMORY WITH INTERNAL UPDATEInfo
- Publication number
- RU2001110372A RU2001110372A RU2001110372/09A RU2001110372A RU2001110372A RU 2001110372 A RU2001110372 A RU 2001110372A RU 2001110372/09 A RU2001110372/09 A RU 2001110372/09A RU 2001110372 A RU2001110372 A RU 2001110372A RU 2001110372 A RU2001110372 A RU 2001110372A
- Authority
- RU
- Russia
- Prior art keywords
- flash memory
- matrix
- updated
- row
- functioning
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 claims 19
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/156,213 US6088268A (en) | 1998-09-17 | 1998-09-17 | Flash memory array with internal refresh |
US09/156,213 | 1998-09-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2001110372A true RU2001110372A (en) | 2003-03-10 |
RU2224303C2 RU2224303C2 (en) | 2004-02-20 |
Family
ID=22558602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2001110372/09A RU2224303C2 (en) | 1998-09-17 | 1999-09-14 | Internally updated flushing memory matrix |
Country Status (12)
Country | Link |
---|---|
US (2) | US6088268A (en) |
EP (1) | EP1147521B1 (en) |
JP (1) | JP2002525778A (en) |
KR (1) | KR100554605B1 (en) |
CN (1) | CN1221981C (en) |
AU (1) | AU6388199A (en) |
CA (1) | CA2341706A1 (en) |
DE (1) | DE19983565B4 (en) |
HK (1) | HK1041554B (en) |
NO (1) | NO20011274L (en) |
RU (1) | RU2224303C2 (en) |
WO (1) | WO2000016338A1 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6088268A (en) * | 1998-09-17 | 2000-07-11 | Atmel Corporation | Flash memory array with internal refresh |
US6662263B1 (en) | 2000-03-03 | 2003-12-09 | Multi Level Memory Technology | Sectorless flash memory architecture |
US7079422B1 (en) * | 2000-04-25 | 2006-07-18 | Samsung Electronics Co., Ltd. | Periodic refresh operations for non-volatile multiple-bit-per-cell memory |
FR2816750B1 (en) | 2000-11-15 | 2003-01-24 | St Microelectronics Sa | FLASH MEMORY COMPRISING MEANS FOR CONTROLLING THE THRESHOLD VOLTAGE OF CELLS MEMORY |
US6466476B1 (en) | 2001-01-18 | 2002-10-15 | Multi Level Memory Technology | Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell |
DE60129294D1 (en) | 2001-02-19 | 2007-08-23 | St Microelectronics Srl | A method for refreshing the stored data in an electrically erasable and programmable nonvolatile memory |
DE10126486A1 (en) * | 2001-05-31 | 2002-12-05 | Abb Patent Gmbh | Method for avoiding long-duration data loss in internal/external data storage devices operated by programs uses programming to operate the data storage in blocks. |
US6421276B1 (en) * | 2001-08-09 | 2002-07-16 | Tower Semiconductor Ltd. | Method and apparatus for controlling erase operations of a non-volatile memory system |
US6751127B1 (en) | 2002-04-24 | 2004-06-15 | Macronix International, Co. Ltd. | Systems and methods for refreshing non-volatile memory |
US6633500B1 (en) | 2002-04-26 | 2003-10-14 | Macronix International Co., Ltd. | Systems and methods for refreshing a non-volatile memory using a token |
US7512975B2 (en) * | 2002-08-16 | 2009-03-31 | Intel Corporation | Hardware-assisted credential validation |
US7010644B2 (en) | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
US20040153902A1 (en) * | 2003-01-21 | 2004-08-05 | Nexflash Technologies, Inc. | Serial flash integrated circuit having error detection and correction |
FR2856186A1 (en) * | 2003-06-12 | 2004-12-17 | St Microelectronics Sa | FLASH MEMORY COMPRISING MEANS FOR MONITORING AND REFRESHING CELLS MEMORY IN THE ERASED STATE |
KR100634440B1 (en) * | 2004-11-05 | 2006-10-16 | 삼성전자주식회사 | Dram for selectively operating responsive to auto-refresh command, memory for controlling auto-refresh operation thereof, memory system including the dram and memory, and operating methods thereof |
US7238569B2 (en) * | 2005-04-25 | 2007-07-03 | Spansion Llc | Formation method of an array source line in NAND flash memory |
US7319617B2 (en) * | 2005-05-13 | 2008-01-15 | Winbond Electronics Corporation | Small sector floating gate flash memory |
US7362610B1 (en) | 2005-12-27 | 2008-04-22 | Actel Corporation | Programming method for non-volatile memory and non-volatile memory-based programmable logic device |
KR100673027B1 (en) | 2006-01-31 | 2007-01-24 | 삼성전자주식회사 | Non-volatile memory device capable of compensating read margin reduced due to hot temperature stress |
US7616508B1 (en) * | 2006-08-10 | 2009-11-10 | Actel Corporation | Flash-based FPGA with secure reprogramming |
US8767450B2 (en) * | 2007-08-21 | 2014-07-01 | Samsung Electronics Co., Ltd. | Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same |
KR20100134375A (en) * | 2009-06-15 | 2010-12-23 | 삼성전자주식회사 | Memory system conducting refresh operation |
US8161355B2 (en) * | 2009-02-11 | 2012-04-17 | Mosys, Inc. | Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process |
US8243525B1 (en) | 2009-09-30 | 2012-08-14 | Western Digital Technologies, Inc. | Refreshing non-volatile semiconductor memory by reading without rewriting |
KR101577721B1 (en) | 2010-07-09 | 2015-12-29 | 삼성전자주식회사 | Memory system and refresh method thereof |
KR20120012056A (en) * | 2010-07-30 | 2012-02-09 | 주식회사 하이닉스반도체 | Memory device |
US9361986B2 (en) | 2011-09-19 | 2016-06-07 | Sandisk Technologies Inc. | High endurance non-volatile storage |
KR101991437B1 (en) | 2012-08-30 | 2019-06-20 | 에스케이하이닉스 주식회사 | Semiconductor memory device and Operating method thereof |
CN103426475A (en) * | 2013-08-06 | 2013-12-04 | 广东博观科技有限公司 | Method and device for reducing chip block erasing time |
JP5981906B2 (en) * | 2013-12-17 | 2016-08-31 | 京セラドキュメントソリューションズ株式会社 | Image forming apparatus |
TWI503843B (en) * | 2014-01-08 | 2015-10-11 | Winbond Electronics Corp | Devices and methods of adaptive refresh |
US9772901B2 (en) | 2015-05-08 | 2017-09-26 | Nxp Usa, Inc. | Memory reliability using error-correcting code |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
JP2633252B2 (en) * | 1987-06-11 | 1997-07-23 | 沖電気工業株式会社 | Semiconductor storage device |
KR960002006B1 (en) * | 1991-03-12 | 1996-02-09 | 가부시끼가이샤 도시바 | Eeprom with write/verify controller using two reference levels |
JP2870328B2 (en) * | 1992-11-12 | 1999-03-17 | 日本電気株式会社 | Nonvolatile semiconductor memory device |
US5365486A (en) * | 1992-12-16 | 1994-11-15 | Texas Instruments Incorporated | Method and circuitry for refreshing a flash electrically erasable, programmable read only memory |
US5511020A (en) * | 1993-11-23 | 1996-04-23 | Monolithic System Technology, Inc. | Pseudo-nonvolatile memory incorporating data refresh operation |
US5606532A (en) * | 1995-03-17 | 1997-02-25 | Atmel Corporation | EEPROM array with flash-like core |
US5699297A (en) * | 1995-05-30 | 1997-12-16 | Kabushiki Kaisha Toshiba | Method of rewriting data in a microprocessor additionally provided with a flash memory |
FR2745114B1 (en) * | 1996-02-20 | 1998-04-17 | Sgs Thomson Microelectronics | NON-VOLATILE ELECTRICALLY MODIFIABLE MEMORY WITH SELF-CONTAINED COOLING |
US5777923A (en) * | 1996-06-17 | 1998-07-07 | Aplus Integrated Circuits, Inc. | Flash memory read/write controller |
US5764568A (en) * | 1996-10-24 | 1998-06-09 | Micron Quantum Devices, Inc. | Method for performing analog over-program and under-program detection for a multistate memory cell |
US5822245A (en) * | 1997-03-26 | 1998-10-13 | Atmel Corporation | Dual buffer flash memory architecture with multiple operating modes |
US6088268A (en) * | 1998-09-17 | 2000-07-11 | Atmel Corporation | Flash memory array with internal refresh |
-
1998
- 1998-09-17 US US09/156,213 patent/US6088268A/en not_active Expired - Lifetime
-
1999
- 1999-09-14 AU AU63881/99A patent/AU6388199A/en not_active Abandoned
- 1999-09-14 JP JP2000570786A patent/JP2002525778A/en not_active Withdrawn
- 1999-09-14 WO PCT/US1999/021018 patent/WO2000016338A1/en active IP Right Grant
- 1999-09-14 DE DE19983565T patent/DE19983565B4/en not_active Expired - Fee Related
- 1999-09-14 CA CA002341706A patent/CA2341706A1/en not_active Abandoned
- 1999-09-14 CN CNB998110930A patent/CN1221981C/en not_active Expired - Fee Related
- 1999-09-14 EP EP99951442A patent/EP1147521B1/en not_active Expired - Lifetime
- 1999-09-14 RU RU2001110372/09A patent/RU2224303C2/en not_active IP Right Cessation
- 1999-09-14 KR KR1020017003406A patent/KR100554605B1/en not_active IP Right Cessation
-
2000
- 2000-04-13 US US09/548,504 patent/US6166959A/en not_active Expired - Lifetime
-
2001
- 2001-03-13 NO NO20011274A patent/NO20011274L/en not_active Application Discontinuation
-
2002
- 2002-04-17 HK HK02102912.9A patent/HK1041554B/en not_active IP Right Cessation
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