RO87749B1 - Procedeu de realizare a tranzistoarelor de putere cu baza epitaxiala - Google Patents
Procedeu de realizare a tranzistoarelor de putere cu baza epitaxialaInfo
- Publication number
- RO87749B1 RO87749B1 RO114957A RO11495784A RO87749B1 RO 87749 B1 RO87749 B1 RO 87749B1 RO 114957 A RO114957 A RO 114957A RO 11495784 A RO11495784 A RO 11495784A RO 87749 B1 RO87749 B1 RO 87749B1
- Authority
- RO
- Romania
- Prior art keywords
- base
- realization
- epitaxal
- power transistors
- corrosion
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 238000001465 metallisation Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
Abstract
Prezenta inventie se refera la un procedeu de realizare a tranzistoarelor NPN si PNP inclusiv tranzistoare Darlington monolitice, cu baza epitaxiala în domeniul de puteri 25+200 W si domeniul de tensiuni 20+200V. Procedeul, conform inventiei cuprindeo serie de operatii standard cum ar fi crestere epitaxiala, difuzii, corodare, mesa metalizari, în scopul îmbunatatirii stabilitatii caracteristicii, de strapungere a jonctiunii colector-baza prevazînd realizarea pasivarii acesteia imediat dupa oper atia de corodare nesa folosind straturi succesive de oxid termic pirolitic si nitrura de siliciu, precum si realizarea unui electrod de cîmp concomitent cu metalizarea de emitor si cea de baza, electrod care este legat la potentialul colectorului pentru ca santurile de corodare mesa sa ajunga numai pîna la zona jonctiunii colector baza.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO84114957A RO87749A2 (ro) | 1984-06-21 | 1984-06-21 | Procedeu de realizare a tranzistoarelor de putere cu baza epitaxiala |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO84114957A RO87749A2 (ro) | 1984-06-21 | 1984-06-21 | Procedeu de realizare a tranzistoarelor de putere cu baza epitaxiala |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO87749B1 true RO87749B1 (ro) | 1985-10-03 |
| RO87749A2 RO87749A2 (ro) | 1985-10-31 |
Family
ID=20115127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO84114957A RO87749A2 (ro) | 1984-06-21 | 1984-06-21 | Procedeu de realizare a tranzistoarelor de putere cu baza epitaxiala |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO87749A2 (ro) |
-
1984
- 1984-06-21 RO RO84114957A patent/RO87749A2/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO87749A2 (ro) | 1985-10-31 |
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