PL449725A1 - Półprzewodnikowe urządzenie kwantowe - Google Patents

Półprzewodnikowe urządzenie kwantowe

Info

Publication number
PL449725A1
PL449725A1 PL449725A PL44972524A PL449725A1 PL 449725 A1 PL449725 A1 PL 449725A1 PL 449725 A PL449725 A PL 449725A PL 44972524 A PL44972524 A PL 44972524A PL 449725 A1 PL449725 A1 PL 449725A1
Authority
PL
Poland
Prior art keywords
nanocables
semiconductor
nodes
scr
network
Prior art date
Application number
PL449725A
Other languages
English (en)
Inventor
Krzysztof Dominik Pomorski
Original Assignee
Krzysztof Dominik Pomorski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Krzysztof Dominik Pomorski filed Critical Krzysztof Dominik Pomorski
Priority to PL449725A priority Critical patent/PL449725A1/pl
Publication of PL449725A1 publication Critical patent/PL449725A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/18—Preparing bulk and homogeneous wafers by shaping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Półprzewodnikowe urządzenie kwantowe ma monolityczną sieć półprzewodnikowych nanokabli o uporządkowanej strukturze węzłów (nds) i połączeń pomiędzy węzłami (scr), tworzących zamknięte pętle nanokabli (lp), na których umieszczane są metalowe bramki (mg) oddzielone od półprzewodnika (scr) warstwą izolatora (ins) w celu regulacji przewodzenia danego połączenia (scr). Nad węzłami sieci (nds) oraz nad zamkniętymi pętlami nanokabli (lp) umieszczone są igły metaliczne (nn, In). Sieć półprzewodnikowych nanokabli o uporządkowanej strukturze ma geometrię prostokątną, trójkątną albo heksagonalną. Ponadto urządzenie posiada układy wstrzykujące dołączone do par sąsiadujących węzłów sieci oraz układy detekcji umieszczone w bezpośrednim sąsiedztwie wybranych węzłów sieci.
PL449725A 2024-09-06 2024-09-06 Półprzewodnikowe urządzenie kwantowe PL449725A1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL449725A PL449725A1 (pl) 2024-09-06 2024-09-06 Półprzewodnikowe urządzenie kwantowe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL449725A PL449725A1 (pl) 2024-09-06 2024-09-06 Półprzewodnikowe urządzenie kwantowe

Publications (1)

Publication Number Publication Date
PL449725A1 true PL449725A1 (pl) 2025-04-28

Family

ID=95554667

Family Applications (1)

Application Number Title Priority Date Filing Date
PL449725A PL449725A1 (pl) 2024-09-06 2024-09-06 Półprzewodnikowe urządzenie kwantowe

Country Status (1)

Country Link
PL (1) PL449725A1 (pl)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101978368A (zh) * 2008-03-24 2011-02-16 D-波系统公司 用于模拟处理的系统、装置与方法
WO2017161936A1 (zh) * 2016-03-23 2017-09-28 厦门市三安光电科技有限公司 一种半导体外延晶片及其制备方法
US12009431B2 (en) * 2018-04-22 2024-06-11 Epinovatech Ab Reinforced thin-film device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101978368A (zh) * 2008-03-24 2011-02-16 D-波系统公司 用于模拟处理的系统、装置与方法
WO2017161936A1 (zh) * 2016-03-23 2017-09-28 厦门市三安光电科技有限公司 一种半导体外延晶片及其制备方法
US12009431B2 (en) * 2018-04-22 2024-06-11 Epinovatech Ab Reinforced thin-film device

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