PL442423A1 - Struktury na bazie GaAs z domieszką GaTe - Google Patents

Struktury na bazie GaAs z domieszką GaTe

Info

Publication number
PL442423A1
PL442423A1 PL442423A PL44242322A PL442423A1 PL 442423 A1 PL442423 A1 PL 442423A1 PL 442423 A PL442423 A PL 442423A PL 44242322 A PL44242322 A PL 44242322A PL 442423 A1 PL442423 A1 PL 442423A1
Authority
PL
Poland
Prior art keywords
sub
gate
gaas
layer
thick
Prior art date
Application number
PL442423A
Other languages
English (en)
Inventor
Michał Marchewka
Paweł Śliż
Dawid Jarosz
Rafał Kuna
Renata Wojnarowska-Nowak
Anna Juś
Michał Inglot
Vitalii Dugaev
Original Assignee
Uniwersytet Rzeszowski
Podkarpackie Centrum Innowacji Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniwersytet Rzeszowski, Podkarpackie Centrum Innowacji Spółka Z Ograniczoną Odpowiedzialnością filed Critical Uniwersytet Rzeszowski
Priority to PL442423A priority Critical patent/PL442423A1/pl
Publication of PL442423A1 publication Critical patent/PL442423A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Przedmiotem zgłoszenia jest struktura studni kwantowej zawierająca kolejno podłoże, korzystnie z GaAs, warstwę GaAs o grubości 10 nm, warstwę buforową GaAs:GaTe o grubości 1 µm, warstwę Al<sub>(x-1)</sub>Ga<sub>x</sub>As/GaAs:GaTe o grubości 5 nm, jako region aktywny, obejmujący studnie kwantowe, korzystnie trzydzieści studni kwantowych, warstwę Al<sub>(x-1)</sub>Ga<sub>x</sub>As o grubości 50 nm jako barierę, oraz warstwę GaAs:GaTe o grubości 1 µm. Przedmiotem zgłoszenia jest także sposób wytwarzania powyższej struktury studni kwantowej.
PL442423A 2022-09-30 2022-09-30 Struktury na bazie GaAs z domieszką GaTe PL442423A1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL442423A PL442423A1 (pl) 2022-09-30 2022-09-30 Struktury na bazie GaAs z domieszką GaTe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL442423A PL442423A1 (pl) 2022-09-30 2022-09-30 Struktury na bazie GaAs z domieszką GaTe

Publications (1)

Publication Number Publication Date
PL442423A1 true PL442423A1 (pl) 2024-04-02

Family

ID=90526635

Family Applications (1)

Application Number Title Priority Date Filing Date
PL442423A PL442423A1 (pl) 2022-09-30 2022-09-30 Struktury na bazie GaAs z domieszką GaTe

Country Status (1)

Country Link
PL (1) PL442423A1 (pl)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110042647A1 (en) * 2009-08-18 2011-02-24 U.S. Government As Represented By The Secretary Of The Army Corrugated-quantum well infrared photodetector with reflective sidewall and method
US20180138330A1 (en) * 2009-08-18 2018-05-17 U.S. Army Research Laboratory Attn: Rdrl-Loc-I Photo detection device using resonance and related method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110042647A1 (en) * 2009-08-18 2011-02-24 U.S. Government As Represented By The Secretary Of The Army Corrugated-quantum well infrared photodetector with reflective sidewall and method
US20180138330A1 (en) * 2009-08-18 2018-05-17 U.S. Army Research Laboratory Attn: Rdrl-Loc-I Photo detection device using resonance and related method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology; A. Szerling i 1-2 in., Proceedings of the III National Conference on Nanotechnology NANO 2009, ACTA PHYSICA POLONICA A Vol. 116 (2009), https://www.researchgate.net/publication/267 417973 _ Mid- Infrared _ GaAsAlGaAs _Quantum_ Cascade _ Lasers _ Technology *
Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p 1-2 Design Grown on GaAs Substrate, Zhuo Deng i in IEEE Journal of Quantum Electronics · May 2019, DOI: 10.1109/JQE.2019.2917946 *
Multi-step interrupted-growth MBE technology for GaAs/ AlGaAs (-9 .4 µm) room 1-2 temperature operating quantum-cascade lasers; K. Kosiel i in., OPTO-ELECTRONICS REVIEW 20(3), 239-246, DOI: 10.2478/sl 1772-012-0029-7 *

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