PL441623A1 - Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact - Google Patents

Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact

Info

Publication number
PL441623A1
PL441623A1 PL441623A PL44162322A PL441623A1 PL 441623 A1 PL441623 A1 PL 441623A1 PL 441623 A PL441623 A PL 441623A PL 44162322 A PL44162322 A PL 44162322A PL 441623 A1 PL441623 A1 PL 441623A1
Authority
PL
Poland
Prior art keywords
contact
substrate
zno
gaas
sup
Prior art date
Application number
PL441623A
Other languages
Polish (pl)
Inventor
Piotr CABAN
Marek GODLEWSKi
Original Assignee
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Fizyki Polskiej Akademii Nauk
Priority to PL441623A priority Critical patent/PL441623A1/en
Publication of PL441623A1 publication Critical patent/PL441623A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Przedmiotem zgłoszenia jest przezroczysty (tlenkowy) i metalowo-tlenkowy kontakt omowy dla przyrządów półprzewodnikowych, w których podłożem jest arsenek galu domieszkowany cynkiem p-GaAs:Zn oraz sposób wykonania takiego kontaktu. Kontakt ma na podłożu p-GaAs:Zn, o koncentracji nośników rzędu 10<sup>16</sup> ÷ 10<sup>20</sup> cm<sup>-3</sup> warstwę tlenku cynku (ZnO) o grubości 20 ÷ 600 nm lub warstwę AZO (ZnO:Al) o grubości 20 ÷ 600 nm lub też dwuwarstwę ZnO/AZO o łącznej grubości 20 ÷ 600nm, najpierw z podłoża GaAs:Zn usuwa się warstwę tlenków rodzimych, a następnie na tak przygotowane podłoże osadza się metodą ALD warstwę ZnO lub warstwę AZO (ZnO:Al) lub dwuwarstwę ZnO/AZO. Przedmiotem zgłoszenia jest również sposób wykonania tego kontaktu omowego.The subject of the application is a transparent (oxide) and metal-oxide ohmic contact for semiconductor devices in which the substrate is gallium arsenide doped with zinc p-GaAs:Zn and a method of making such contact. The contact has a layer of zinc oxide (ZnO) on a p-GaAs:Zn substrate with a carrier concentration of 10<sup>16 ÷ 10<sup>20</sup> cm<sup>-3</sup> thickness of 20 ÷ 600 nm or an AZO (ZnO:Al) layer with a thickness of 20 ÷ 600 nm or a ZnO/AZO bilayer with a total thickness of 20 ÷ 600 nm, first the native oxide layer is removed from the GaAs:Zn substrate and then onto the prepared substrate a ZnO layer or an AZO layer (ZnO:Al) or a ZnO/AZO bilayer is deposited using the ALD method. The subject of the report is also the method of making this ohmic contact.

PL441623A 2022-06-30 2022-06-30 Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact PL441623A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL441623A PL441623A1 (en) 2022-06-30 2022-06-30 Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL441623A PL441623A1 (en) 2022-06-30 2022-06-30 Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact

Publications (1)

Publication Number Publication Date
PL441623A1 true PL441623A1 (en) 2024-01-03

Family

ID=89473625

Family Applications (1)

Application Number Title Priority Date Filing Date
PL441623A PL441623A1 (en) 2022-06-30 2022-06-30 Ohmic contact for semiconductor devices with a p-GaAs:Zn substrate and how to make such contact

Country Status (1)

Country Link
PL (1) PL441623A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039997B1 (en) * 2004-03-02 2011-06-09 엘지이노텍 주식회사 Ν-ＺｎＯ / ｐ-ＧＡｓ heterojunction photodiode and method of manufacturing the same
US8461617B2 (en) * 2008-08-29 2013-06-11 Nichia Corporation Semiconductor light emitting element and semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039997B1 (en) * 2004-03-02 2011-06-09 엘지이노텍 주식회사 Ν-ＺｎＯ / ｐ-ＧＡｓ heterojunction photodiode and method of manufacturing the same
US8461617B2 (en) * 2008-08-29 2013-06-11 Nichia Corporation Semiconductor light emitting element and semiconductor light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ScienceDirect; https://www.sciencedirect.com/science/article/abs/pii/S0040609011006018; Thin Solid Films Volume 519, Issue 16, 1 June 2011, Pages 5558-5561; Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing, Yung-Chen Cheng et al. *

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