KR20160006787A - Transparent conductive film composition, transparent electrode, semiconductor light-emitting element, solar cell - Google Patents

Abstract

A transparent conductive film excellent in light transmittance in a short wavelength is realized without using In.
The composition for a transparent conductive film of the present invention is characterized by being represented by the following formula (1).
Al _x Ga _y B _z M _1-xyz N (Equation 1)
1, 0? Z <1, 0.001? 1-xyz? 0.1, and M includes at least one of Si and Ge.

Description

TECHNICAL FIELD [0001] The present invention relates to a transparent conductive film, a composition for a transparent conductive film, a transparent electrode, a semiconductor light emitting device, and a solar cell (TRANSPARENT CONDUCTIVE FILM COMPOSITION, TRANSPARENT ELECTRODE, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SOLAR CELL)

The present invention relates to a composition for a transparent conductive film mainly containing Al and Ga, a transparent electrode comprising the same, a semiconductor light emitting element, and a solar cell.

A transparent conductive material (hereinafter, referred to as a "transparent conductive film") has excellent conductivity and light transmittance and is therefore used as a transparent electrode for various devices. Conventionally, as such a transparent conductive film, tin oxide (SnO ₂ ) containing antimony (Sb) or fluorine (F) as a dopant, zinc oxide (ZnO) containing aluminum (Al) or gallium (Ga) Oxides such as indium oxide (In ₂ O ₃ ) containing Sn as a dopant are known. Among them, an indium oxide film containing Sn as a dopant is widely used because it is referred to as an ITO (Indium-Tin-Oxide) film and a low resistance oxide-transparent conductive film is easily obtained 1).

For the formation of the ITO film, a DC sputtering method is generally used. The ITO film formed at room temperature exhibits a low resistivity of about 5 x 10 ^{&lt; -4} &gt; OMEGA .cm. The ITO film is also good in light transmittance in the visible region, and exhibits an average light transmittance of 80% or more. Also, it is excellent in chemical and thermal stability.

Recently, a light emitting material or a light emitting device (for example, LED, laser, organic or inorganic EL) having a function of blue light emission or near-ultraviolet light emission (for example, wavelength of 300 to 400 nm) Is underway. Such electronic devices require transparent electrodes.

Japanese Patent Application Laid-Open No. 2007-113026

&Quot; High Si and Ge n-type doping of GaN doping - Limits and impact on stress &quot;, Applied Physics Letters 100, 122104, (2012)

However, since the conventional oxide transparent conductive film including the ITO film has excellent average transmittance in the visible range of 400 to 800 nm in wavelength, absorption occurs in near-ultraviolet near 400 nm wavelength, near-ultraviolet near- It can not penetrate. Therefore, when a conventional oxide transparent conductive film is used as an electrode of a device that emits light having such a wavelength, absorption of light occurs in this electrode, and the light extraction efficiency is significantly lowered.

Another problem is that the rare metal In is required for the ITO film, but the price of In is rising (rising) and the supply is unstable due to the social situation of the resource country. Therefore, there is a possibility that a transparent conductive film not using In is needed in the future.

In view of the above problems, it is an object of the present invention to realize a transparent conductive film excellent in light transmittance in a short wavelength without using In. It is another object of the present invention to realize a transparent electrode, a semiconductor light emitting element, and a solar cell including such a transparent conductive film.

The composition for a transparent conductive film of the present invention is characterized by being represented by the following formula (1).

Al _x Ga _y B _z M _1-xyz N (Equation 1)

In the formula, 0 <x <1, 0 <y <1, 0≤z <1, 0.001≤1-x-y-z≤0.1, and M includes at least one of Si and Ge.

According to the above composition for a transparent conductive film, a transparent conductive film which does not contain In and has a low specific resistance, that is, a highly conductive conductive film can be realized. In addition, as described later in the section of "Mode for carrying out the invention", since the absorption edge can be set in the near-infrared region or the cardiac absorption region according to the composition ratio of Al, the near- High transmittance can be ensured even with light of the same short wavelength. In addition, with respect to the transmittance to visible light, a transmittance exceeding 90% can be realized, so that higher permeability can be secured than in the case of using an ITO film.

Even if boron (B) is not contained or contained to a certain extent, the transparent conductive film made of the composition for a transparent conductive film can realize high transparency and conductivity with In free.

In the above composition for a transparent conductive film, the composition ratio of Si or Ge may be set to particularly 0.005 or more and 0.05 or less. By setting the composition ratio within this range, very high conductivity can be realized.

The transparent electrode of the present invention is characterized by comprising the above composition for a transparent conductive film.

Further, the semiconductor light emitting element of the present invention is characterized by including the above-described transparent electrode. This makes it possible to function as an electrode for supplying current while suppressing absorption of light emitted from the light emitting element.

The semiconductor light emitting device of the present invention is characterized in that it comprises the above composition for a transparent conductive film and is configured as a light emitting device having a short wavelength with an emission wavelength of 400 nm or less. As a specific configuration thereof, various configurations are assumed.

As an example, the semiconductor light emitting device of the present invention has a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer,

A transparent electrode formed on the p-type nitride semiconductor layer above the transparent conductive film,

And a reflective electrode formed on an upper layer of the transparent electrode,

The light emitting layer may be composed of a nitride semiconductor layer having an emission peak wavelength of 400 nm or less.

As another example, the semiconductor light emitting element of the present invention has a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer,

A transparent electrode formed on the entire upper surface of the n-type nitride semiconductor layer, the transparent electrode comprising a composition for the transparent conductive film;

And a power supply terminal formed on an upper layer of the transparent electrode,

The light emitting layer may be composed of a nitride semiconductor layer having a peak emission wavelength of 400 nm or less.

By forming the transparent electrode including the composition for a transparent conductive film, a transparent electrode having a small specific resistance can be realized. Thus, even when an In-free transparent electrode is formed on the p-type nitride semiconductor layer or the n-type nitride semiconductor layer, an ohmic connection can be realized, so that a light emitting element in which absorption of light of a short wavelength is suppressed can be realized.

As another example, the semiconductor light emitting device of the present invention has a light emitting layer between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, and the n-type nitride semiconductor layer includes the composition for the transparent conductive film .

According to this structure, since the n-type nitride semiconductor layer including the above-mentioned composition for a transparent conductive film is formed, the n-type nitride semiconductor layer can be realized with a low specific resistance value, It is possible to improve the luminous efficiency. Also, even if the upper surface of the n-type nitride semiconductor layer is formed of an electrode made of a relatively large metal material having a work function (e.g., Ni or the like), ohmic contact can be realized by non annealing. This makes it unnecessary to carry out the annealing at a temperature exceeding the melting point of the solder even in a vertical type semiconductor light emitting device in which bonding treatment of the substrate is required through solder such as Au-Sn alloy in the manufacturing process.

According to the composition for a transparent conductive film of the present invention, it is possible to realize a transparent conductive film which does not use In and is excellent in light transmittance particularly in a short wavelength.

1 is a graph showing the relationship between the Si composition ratio of Al _x Ga _y Si _{1 -x- y} N and the resistivity.
Fig. 2 is a graph showing the relationship between the Al composition ratio of Al _x Ga _y Si _{1 -x- y} N and the absorption edge.
3 is a schematic cross-sectional view of the semiconductor light emitting device of the first embodiment.
4 is a schematic cross-sectional view of a conventional semiconductor light emitting device.
Fig. 5A is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the first embodiment.
Fig. 5B is a part of a process sectional view for explaining a manufacturing method of the semiconductor light emitting device of the first embodiment.
Fig. 5C is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting device of the first embodiment.
FIG. 5D is a part of a process sectional view for explaining a manufacturing method of the semiconductor light emitting device of the first embodiment.
Fig. 5E is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the first embodiment.
FIG. 5F is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting device of the first embodiment.
FIG. 5G is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting device of the first embodiment.
6 is a schematic cross-sectional view of the semiconductor light emitting device of the second embodiment.
FIG. 7A is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the second embodiment.
Fig. 7B is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the second embodiment.
Fig. 7C is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the second embodiment.
FIG. 7D is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting device of the second embodiment.
Fig. 7E is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting element of the second embodiment.
7F is a part of a process sectional view for explaining the manufacturing method of the semiconductor light emitting element of the second embodiment.
FIG. 7G is a part of a process sectional view for explaining the method of manufacturing the semiconductor light emitting device of the second embodiment.
8 is a schematic cross-sectional view of the semiconductor light emitting device of the third embodiment.
9 is a diagram for explaining the ohmic characteristics between the nitride semiconductor layer and the Al _x Ga _y Si _{1 -x- y} N layer.
10 is a cross-sectional view showing a schematic configuration of a solar battery cell.

[Composition for transparent conductive film]

1 is a graph showing the relationship between the Si composition ratio and resistivity of Al _x Ga _y Si _{1 -x- y} N (0 <x <1, 0 <y <1). Further, the composition of Al was fixed at 6% and 40%, and the ratio of Ga and Si was adjusted, and the specific resistance was measured while changing the composition ratio of Si. The resistivity is measured using a hole measuring apparatus.

1, Al _{0 . 06} Ga _y Si _{0 .94- y} N, the Si composition was 0.16%, that is, Al _{0 . 06} Ga _{0 .} If the Si to _{9384 0 .0016} N is approximately 1 × 10 ^- The increase is ³ Ω · cm, Si compositional ratio, the specific resistance of the layer can be seen that decreasing. For example, if the Si composition is 0.5%, that is, Al _{0 . 06} Ga _{0 . 935} Si _{0 .005} in case of N, the resistivity of 4 × 10 ^- a ⁴ Ω · cm, Si composition of 5%, i.e., Al _0.06 Ga _0.89 Si _0.05 N, the case where the resistivity is 6 × 10 ^-5 Ω · cm to be.

However, GaN, which is generally used as a nitride semiconductor material, is doped with Si at a high concentration for the purpose of reducing the specific resistance. However, when the concentration of the dopant to be implanted into the GaN is set to 1 x 10 ¹⁹ / cm ³ or more, a phenomenon that film roughening occurs due to, for example, deterioration of the atomic bonding state is known , See Non-Patent Document 1). Even if Si is doped at a very high concentration due to the deterioration of the crystal state due to this film-deposition, the resistivity is not sufficiently lowered, and the surface becomes rough and becomes cloudy.

For GaN, the case where the Si doping concentration of the film roughness substantially vicinity of 9 × 10 ¹⁸ / cm ³ of a 1 × 10 ¹⁹ / cm ³ does not cause the upper limit, the specific resistance of 5 × 10 ^- was ³ Ω · cm . That is, the Ga _y Si ₁ formed by doping with Si in the GaN _- In _y N, 5 × 10 ^- can be said that the lower limit of the specific resistance of about ³ Ω · cm.

On the other hand, as shown in Figure 1, Al _{0. 06} Ga _y Si _y N ₀ If one with _.94-, the composition Si 0.16% (composition ratio Si 0.0016) 10% (Si composition ratio of 0.1) increases even when, Ga _y Si ₁ to from _- to realize a lower specific resistance than that of _y N .

In Figure 1, fixed to a composition of 40% Al and, in the case where a 5% when the composition 0.5% of Si, that is, Al _{0. 4} Ga _{0 . 595} Si _{0 .005} N and Al _{0 . 4} Ga _{0 . 55} Si _{0 . 05} N are also shown. Al _{0 . 4} Ga _{0 . 595} Si _{0 .005} N in the specific resistance is approximately 1 × 10 ^- is _{^{3 Ω · cm, Al 0.4 Ga}} 0.55 Si 0.05 N The resistivity of about 1.5 × 10 ^- was ⁴ Ω · cm. As a result, it can be seen that, even when the composition of Al is different, the specific resistance can be reduced by increasing the composition of Si, and a resistivity lower than that of Ga _y Si _1-y N can be realized. That is, it is proved that the value of the resistivity can be lowered by increasing the Si composition of Al _x Ga _y Si _{1 -x- y} N regardless of the composition of Al.

In addition, in Figure 1, when the composition 6% Al, 10% Si composition, that is, Al _0.06 Ga _0.84 Si case of a _0.1 N, the specific resistance is 6.5 × 10 ^- and ⁵ Ω · cm, Si composition 5 %, That is, the specific resistance is slightly higher than that in the case of Al _0.06 Ga _0.89 Si _0.05 N. This is presumably because the crystallinity is deteriorated when the concentration of Si is made high in GaN and the phenomenon that the resistivity is raised is assumed to occur. That is, if the Si composition of Al _x Ga _y Si _{1 -x- y} N is higher than 10%, it is expected that the resistivity is higher than Al _0.06 Ga _0.84 Si _0.1 N.

Therefore, according to FIG 1, a composition of Si at least 0.1% or less than 10%, that _{is, Al X Ga y Si 1-} xy N (0 <x <1, 0 <y <1, 0.001≤1-xy≤0.1) , It can be understood that a device having a specific resistance smaller than that of the conventional GaN can be realized. In particular, when the composition of Si is 0.5% or more and 5% or less, that is, Al _x Ga _y Si _{1 -x- y} N (0 <x <1, 0 <y <1, 0.005 1-xy? It can be understood that a device having a resistivity much smaller than that of GaN can be realized.

2 is a graph showing the relationship between the Al composition ratio of Al _x Ga _y Si _{1 -x- y} N and the absorption edge. In Fig. 2, the composition of Si was fixed at 1%, and the ratio of Al and Ga was adjusted to obtain the absorption edge while changing the composition ratio of Al. Further, the absorption edge is derived by calculation using the Beguard rule.

According to Fig. 2, it can be seen that the absorption edge can be shifted to the short wavelength side by increasing the composition ratio of Al. For example, when the composition ratio of Al is 0.06, the absorption edge is about 350 nm, and when the composition ratio is 0.4, the absorption edge is about 300 nm. That is, according to Al _x Ga _y Si _{1 -x- y} N, by adjusting the composition ratio of Al according to the wavelength of the light to be transmitted, it is possible to realize a material in which absorption of light of short wavelength is suppressed. Further, since the absorption edge becomes a wavelength far away from the visible light range, a very high light transmittance can be realized for light in the visible light range as compared with ITO or the like.

That is, according to Fig. 1 and Fig. 2, it is possible to realize a conductive material excellent in light transmittance in a short wavelength without using In, by using Al _x Ga _y Si _{1 -x- y} N of the present invention. Further, in Fig. 1, even when the Si composition is the same, the Al _{0 . 06} Ga _y Si _{0 .94-y} N, the composition of Al _{0 . 4} Ga _y Si _{0 .6 - y} N, the value of the resistivity is large. Thus, when the proportion of Si is made constant, it is suggested that the absorption edge can be shifted to the short wavelength side by increasing the composition of Al, while the specific resistance is increased. However, when the Al ₀ .05 composition is formed by setting the composition of Al to 40% and the composition of Si to 0.5% _{. 4} Ga _{0 .} According to the ₅₉₅ Si _{0 .005} N, a value lower than the minimum value of the specific resistance of GaN, 1 × 10 ^- is ³ Ω · cm, it is possible to make the absorption edge at about 300nm, to achieve both high transmittance and low specific resistance of the external light Convert . In order to further reduce the resistivity, the composition ratio of Si may be increased.

In the above description, a quaternary compound such as Al _x Ga _y Si _{1 -x- y} N is assumed. However, when a compound having five or more elements is formed by mixing impurities to such an extent that it does not affect the resistivity, . That is, the _{Al X Ga y Si 1 -x- y} N is boron (B) is added to the _{formed, Al x Ga y B z Si} 1 -xy- z N (0 <x <1, 0 <y <1 , 0? Z <1, 0.001? 1-xyz? 0.1), resistivity smaller than that of the conventional GaN can be realized.

In the above description has been described on the assumption of _{Al X Ga y Si 1 -x- y} N containing Si in the compound, by using the Ge as a chemical that approximate the properties of Si and Si in place of, Al _X Ga _y Even if Ge _{1 -xy} N is realized, the same discussion is possible. That is, in this case, the specific resistance can be lowered by increasing the composition ratio of Ge. Further, it may be a compound containing both Si and Ge. In this case, it can be considered that the specific resistance can be lowered by increasing the total of the composition ratios of Si and Ge.

That is, since the electric conductivity σ and the resistivity ρ are represented by σ = 1 / ρ = qnμ according to the mobility μ, the carrier density n, and the carrier charge, Ge, it is possible to consider that the resistivity 1 /? Has become smaller because the mobility μ is increased. Among the tetravalent elements, Si and Ge are preferable for the reason that the activation energy to be a donor is small, and it is particularly preferable to use Si.

In summary, the composition Al _x Ga _y B _z M _{1 -xyz} N (0 <x <1, 0 <y <1, 0 _{≦ z} <1, 0.001 ≦ 1-xyz ≦ 0.1, And M is at least one of Si and Ge), it is possible to realize a conductive material excellent in light transmittance in a short wavelength without using In.

[Light Emitting Element]

The above-described composition of the present invention is the _{Al x Ga y B z M 1} -xy- z N (0 <x <1, 0 <y <1, 0≤z <1, 0.001≤1-xyz≤0.1, M is Si , And Ge) is described with reference to the drawings. In the following, the layer composed of this composition will be referred to as &quot; Al _x Ga _y Si _1-xy N layer &quot;.

(First Embodiment)

A first embodiment of a semiconductor light emitting element will be described with reference to the drawings. 3 is a schematic cross-sectional view of the semiconductor light emitting device of the first embodiment. In the following drawings, the dimensional ratio in the drawings and the actual dimensional ratio do not necessarily coincide with each other.

The semiconductor light emitting element 1 includes a support substrate 11, an undoped layer 13, a semiconductor layer 20, a transparent electrode 21, a transparent electrode 23, a power supply terminal 25, a power supply terminal 27, A reflective electrode 31, and a reflective electrode 33, The semiconductor layer 20 is formed by laminating an n-type nitride semiconductor layer 15, a light emitting layer 17, and a p-type nitride semiconductor layer 19 in this order from below.

The transparent electrode 21 and the transparent electrode 23 are formed of an Al _x Ga _y Si _{1 -x- y} N layer. A feeder terminal 25 is formed in the upper layer of the transparent electrode 21 through the reflective electrode 31. [ Likewise, a feeder terminal 27 is formed on the transparent electrode 23 via a reflecting electrode 33. [

The semiconductor light emitting element 1 shown in Fig. 3 is an element which is supposed to extract light downward on the paper surface. Among the light emitted from the light emitting layer 17, the upwardly directed light is directed to the reflective electrode 33 through the transparent electrode 23, reflected from the reflective electrode 33, and emitted toward the support substrate 11. Here, a part of the light is not radiated to the outside from the support substrate 11, but is reflected at the interface thereof, and is reflected by the semiconductor light emitting element 1 ). &Lt; / RTI &gt; At this time, part of the light travels toward the transparent electrode 21 side. Since the light transmitted through the transparent electrode 21 is irradiated to the reflecting electrode 31, the light can be reflected from the reflecting electrode 31 and guided to the supporting substrate 11 side again.

4 is a schematic cross-sectional view of a conventional semiconductor light emitting device. The conventional semiconductor light emitting element 90 has contact electrodes 91 and 93 formed of ITO. This is because, when the reflective electrode 33 made of a metal material having high reflectivity is directly formed on the upper surface of the p-type nitride semiconductor layer 19, good contact resistance can not be formed. Therefore, for the purpose of improving contact characteristics, ITO or Ni is provided as a contact electrode 93 of a thin film and a reflective electrode 33 formed of Ag or Al is provided on the contact electrode 93. The same is true for the contact electrode 91.

However, ITO has an absorption edge near 365 nm, and Ni has an absorption edge on the longer wavelength side than ITO. Therefore, since the contact electrodes 91 and 93 made of ITO or Ni absorb light of a short wavelength, the light extraction efficiency of a short wavelength is lowered. On the other hand, the semiconductor light emitting device 1 shown in Fig. 3 has transparent electrodes 21 and 23 formed of an Al _x Ga _y Si _{1 -x- y} N layer, Since a material located in a shorter wavelength than ITO or Ni can be used, the light extraction efficiency on the short wavelength side can be particularly improved.

Hereinafter, the detailed configuration of the semiconductor light emitting device 1 shown in FIG. 3 and the manufacturing method thereof will be described. The following description is only an example.

The supporting substrate 11 is composed of a sapphire substrate. In addition to sapphire, Si, SiC, GaN, YAG or the like may be used. The reflective electrode 31 and the reflective electrode 33 are made of, for example, a metal of Ag system, Al, Rh, or the like.

The undoped layer 13 is formed of, for example, GaN. More specifically, it is formed by a low-temperature buffer layer made of GaN and a ground layer made of GaN on the upper layer.

The transparent electrode 21 and the transparent electrode 23 are formed of an Al _x Ga _y Si _{1 -x- y} N layer. 3, the transparent electrode 21 and the transparent electrode 23 are arranged with a gap 5 in the horizontal direction. Thereby, an effect of suppressing the flow of leakage current in the horizontal direction between the transparent electrode 23 and the transparent electrode 21 is obtained. The transparent electrode 23 is formed on the upper layer of the p-type nitride semiconductor layer 19 and the p-type nitride semiconductor layer 19 is formed on the upper layer of the light emitting layer 17. The light emitting layer 17 is formed on the transparent electrode Type nitride semiconductor layer 15 as in the case of the n-type nitride semiconductor layer 21 shown in Fig. 3, the light emitting layer 17 and the transparent electrode 21 are formed in the upper layer of the n-type nitride semiconductor layer 15 with the gaps 5 in the horizontal direction to each other have.

The feeder terminal 25 is formed on the upper layer of the reflection electrode 31 and the feeder terminal 27 is formed on the upper layer of the reflection electrode 33 and is made of Cr-Au, for example. The feeder terminal 25 is electrically connected to the substrate 41 via the bonding metal 37 and the feeder terminal 27 is electrically connected to the substrate 41 via the bonding metal 39. [

The semiconductor layer 20 is formed by laminating an n-type nitride semiconductor layer 15, a light emitting layer 17, and a p-type nitride semiconductor layer 19 in this order from below.

The n-type nitride semiconductor layer 15 is made of GaN or AlGaN and may have a multi-layer structure. For example, a layer (protective layer) made of GaN is provided in a region in contact with the undoped layer 13, and Al _n Ga _{1 - n} N (0 &lt; Layer (electron supply layer) composed of a metal layer (an electron supply layer). At least the protective layer is preferably doped with an n-type impurity such as Si, Ge, S, Se, Sn, or Te, and more preferably doped with Si.

The light emitting layer 17 is formed of a semiconductor layer having a multiple quantum well structure in which, for example, a well layer made of InGaN and a barrier layer made of AlGaN are repeated. These layers may be doped with p-type or n-type.

The p-type nitride semiconductor layer 19 is made of, for example, GaN or AlGaN, and doped with p-type impurities such as Mg, Be, Zn and C.

Next, an example of a manufacturing method of the semiconductor light emitting element 1 shown in Fig. 3 will be described with reference to the process sectional views of Figs. 5A to 5G.

(Step S1)

As shown in Fig. 5A, a semiconductor layer 20 is formed on a supporting substrate 11. Fig. More specifically, as follows.

<Preparation of Support Substrate 11>

First, when a sapphire substrate is used as the supporting substrate 11, the c-plane sapphire substrate is cleaned. More specifically, for example, a c-plane sapphire substrate is disposed in a treatment furnace of a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus, hydrogen gas having a flow rate of 10 slm is flown into the treatment furnace , For example, by raising the temperature in the furnace to 1150 캜.

&Lt; Formation of undoped layer 13 &gt;

Next, a low-temperature buffer layer made of GaN is formed on the surface of the support substrate 11 (c-plane sapphire substrate), and a ground layer made of GaN is formed thereon. These low-temperature buffer layers and base layers correspond to the undoped layer 13.

A more specific method of forming the undoped layer 13 is as follows, for example. First, the furnace pressure of the MOCVD apparatus is set to 100 kPa and the furnace temperature is set to 480 캜. Trimethylgallium (TMG) having a flow rate of 50 占 퐉 ol / min and ammonia having a flow rate of 2500 占 퐉 ol / min were introduced into the treatment furnace as a raw material gas in a treatment furnace while flowing nitrogen gas and hydrogen gas each having a flow rate of 5 slm as a carrier gas in the treatment furnace Second. As a result, a low-temperature buffer layer made of GaN having a thickness of 20 nm is formed on the surface of the supporting substrate 11.

Next, the furnace temperature of the MOCVD apparatus is raised to 1150 占 폚. While flowing nitrogen gas having a flow rate of 20 slm and hydrogen gas having a flow rate of 15 slm as a carrier gas in the treatment furnace, TMG having a flow rate of 100 占 퐉 ol / min and ammonia having a flow rate of 250000 占 퐉 / min were introduced into the treatment furnace as a raw material gas for 30 minutes Supply. Thus, a ground layer made of GaN having a thickness of 1.7 탆 is formed on the surface of the first buffer layer.

<Formation of n-type nitride semiconductor layer 15>

Next, an electron supply layer having a composition of Al _n Ga _{1 - n} N (0 < _{n? 1} ) is formed on the undoped layer 13. This electron supply layer corresponds to the n-type nitride semiconductor layer 15.

A more specific method of forming the n-type nitride semiconductor layer 15 is as follows, for example. Subsequently, the furnace pressure in the MOCVD apparatus is set to 30 kPa while the furnace temperature is set to 1150 캜. Then, TMG having a flow rate of 94 占 퐉 ol / min, trimethylaluminum (TMA) having a flow rate of 6 占 퐉 ol / min and a flow rate of 6 占 퐉 ol / min were introduced as a raw material gas while a nitrogen gas having a flow rate of 20 slm and a hydrogen gas having a flow rate of 15 slm were flowing as a carrier gas, Ammonia at a flow rate of 250000 占 퐉 ol / min and tetraethylsilane at a flow rate of 0.025 占 퐉 ol / min are supplied into the treatment furnace for 60 minutes. By this, Al _{0 . 06} has a composition of Ga _{0 .94} N, Si concentration of ³ × 10 ¹⁹ / cm 3 and an n-type nitride semiconductor layer 15 having a thickness of 2μm (electron supply layer) is formed on the upper layer of the undoped layer 13 .

Thereafter, the supply of TMA may be stopped, and the other source gas may be supplied for 6 seconds to form a protective layer of n-type GaN having a thickness of 5 nm on the electron supply layer.

In the above example, Si is used as the n-type impurity, but other impurities such as Ge, S, Se, Sn and Te can be used.

&Lt; Formation of light emitting layer 17 &gt;

Next, a light emitting layer 17 having a multiple quantum well structure in which a well layer made of InGaN and a barrier layer made of n-type AlGaN are periodically repeated is formed on the n-type nitride semiconductor layer 15.

A more specific method of forming the light emitting layer 17 is as follows, for example. First, the furnace pressure of the MOCVD apparatus is set to 100 kPa, and the furnace temperature is set to 830 ° C. Then, TMG having a flow rate of 10 占 퐉 ol / min, trimethyl indium (TMI) having a flow rate of 12 占 퐉 ol / min and a flow rate of 12 占 퐉 ol / min were introduced as a raw material gas while a nitrogen gas having a flow rate of 15 slm and a hydrogen gas having a flow rate of 1 slm were flowing as a carrier gas, Ammonia of 300000 占 퐉 ol / min is supplied into the treatment furnace for 48 seconds. Thereafter, TMG having a flow rate of 10 占 퐉 ol / min, TMA having a flow rate of 1.6 占 퐉 ol / min, tetraethyl silane having a flow rate of 0.002 占 퐉 ol / min, and ammonia having a flow rate of 300,000 占 퐉 ol / min are supplied for 120 seconds in the treatment furnace. By repeating these two steps, the light-emitting layer 17 having a multiple quantum well structure with 15 periods by a barrier layer made of InGaN having a thickness of 2 nm and a n-type AlGaN having a thickness of 7 nm is formed into an n- And is formed on the upper surface of the nitride semiconductor layer 15.

<Formation of p-type nitride semiconductor layer 19>

Next, a hole supplying layer having a composition of, for example, Al _m Ga _{1 -m} N (0? M <1) is formed on the light emitting layer 17. This hole supply layer corresponds to the p-type nitride semiconductor layer 19.

A more specific method of forming the p-type nitride semiconductor layer 19 is as follows, for example. First, the furnace pressure in the MOCVD apparatus is maintained at 100 kPa, and the furnace temperature is raised to 1025 占 폚 while flowing nitrogen gas having a flow rate of 15 slm as a carrier gas and hydrogen gas having a flow rate of 25 slm in the treatment furnace. Thereafter, TMG having a flow rate of 35 占 퐉 ol / min, TMA having a flow rate of 20 占 퐉 ol / min, ammonia having a flow rate of 250000 占 퐉 / min, and biscyclopentadienyl having a flow rate of 0.1 占 퐉 ol / min for doping the p- Magnesium is supplied for 60 seconds in the treatment furnace. Thereby, on the surface of the light-emitting layer 17, Al _{0 . 3} having a composition of Ga _{0 .7} N to form a hole-supplying layer. Then, by changing the flow rate of TMG to 9μmol / min and feeding a raw material gas 360 seconds, and the Al having a thickness of 120nm _0. Having a composition of ₁₃ Ga _{0 .87} N to form a hole-supplying layer. The p-type nitride semiconductor layer 19 is formed by such a hole supplying layer.

Thereafter, the flow rate of biscyclopentadienyl magnesium is changed to 0.2 占 퐉 ol / min and the source gas is supplied for 20 seconds to form a high concentration layer (contact layer) of p-type GaN having a thickness of 5 nm.

In the above example, Mg is used as the p-type impurity, but other impurities such as Be, Zn, and C can be used.

(Step S2)

Next, activation processing is performed on the wafer obtained in step S1. More specifically, activation treatment is performed at 650 占 폚 for 15 minutes under a nitrogen atmosphere using an RTA (Rapid Thermal Anneal) apparatus.

(Step S3)

The p-type nitride semiconductor layer 19 and the light emitting layer 17 are removed by dry etching using an ICP device until a part of the top surface of the n-type nitride semiconductor layer 15 is exposed, as shown in Fig. 5B.

(Step S4)

As shown in Fig. 5C, a resist 35 is formed on the top surface of the n-type nitride semiconductor layer 15 in relation to the non-formation region of the reflective electrode.

(Step S5)

As shown in Fig. 5D, an Al _x Ga _y Si _{1 -x- y} N layer 26 is formed on the _entire surface.

Specifically, reactive sputtering is used to form an Al _0.1 Ga _0.89 Si _0.01 N layer 26 having a thickness of 50 nm.

Thereafter, the resist and the Al _x Ga _y B _z M _{1 -xy- z} N layer 26 directly located thereon are removed by lift-off of the resist using a chemical such as acetone. As a result, as shown in FIG. 5E, the Al _x Ga _y B _z M _{1 -xy- z} N layer 26 is divided into two to form the transparent electrode 21 and the transparent electrode 23. At this time, a clearance 5 relating to the horizontal direction is formed between the transparent electrode 21 and the transparent electrode 23.

(Step S6)

A reflective electrode 31 made of Al or Ag is formed on the upper surface of the transparent electrode 21 and a reflective electrode 33 made of Al or Ag is formed on the upper surface of the transparent electrode 23 using an electron beam evaporator (EB device) , Respectively, for example, to a thickness of about 120 nm (see FIG. 5F).

(Step S7)

A feeder terminal 25 is formed on the upper surface of the reflective electrode 31 and a feeder terminal 27 is formed on the upper surface of the reflective electrode 33 by deposition of a material film made of Cr of 100 nm thickness and Au of 3 mu m thickness (See Fig. 5G). Thereafter, the feed terminal 25 and the support substrate 41 are connected by the bonding metal 37, and the feed terminal 27 and the support substrate 41 are connected by the bonding metal 39. Thus, the semiconductor light emitting element 1 shown in Fig. 3 is formed.

In the above example, both the transparent electrode 23 formed on the upper surface of the p-type nitride semiconductor layer 19 and the transparent electrode 21 formed on the upper surface of the n-type nitride semiconductor layer 15 It is also possible to adopt a structure in which only the transparent electrode 23 is provided.

(Second Embodiment)

A second embodiment of a semiconductor light emitting element will be described with reference to the drawings. In the following embodiments, the parts common to those of the first embodiment are denoted by the same reference numerals and the description thereof may be omitted.

6 is a schematic cross-sectional view of the semiconductor light emitting device of the second embodiment. The semiconductor light emitting element 1a includes a support substrate 12, a conductive layer 44, an insulating layer 48, a semiconductor layer 20, and a power supply terminal 42. [ The semiconductor layer 20 is formed by stacking a p-type nitride semiconductor layer 19, a light emitting layer 17, and an n-type nitride semiconductor layer 16 in this order from below.

In the present embodiment, the n-type nitride semiconductor layer 16 is formed of an Al _x Ga _y Si _{1 -x- y} N layer. As described above, since the Al _x Ga _y Si _{1 -x- y} N layer can realize a very low specific resistance, it is possible to lower the resistance value of the n layer than the conventional light emitting device, The amount of current required for light emission can be made to flow in the light emitting layer, and the light emitting efficiency is improved.

Hereinafter, the detailed configuration of the semiconductor light-emitting device 1 shown in Fig. 6 and the manufacturing method thereof will be described. The following description is only an example.

The supporting substrate 12 is made of, for example, a conductive substrate such as CuW, W, or Mo, or a semiconductor substrate such as Si. In the upper layer of the supporting substrate 12, a conductive layer 44 having a multilayer structure is formed. The conductive layer 44 includes a solder layer 43, a protective layer 45, and a reflective electrode 47 in this embodiment.

The solder layer 43 is made of, for example, Au-Sn, Au-In, Au-Cu-Sn, Cu-Sn, Pd-Sn, The solder layer 43 is used when bonding the sapphire substrate and the support substrate 12, as will be described later in the section of the manufacturing method.

The protective layer 45 is made of, for example, a Pt-based metal (an alloy of Ti and Pt), W, Mo, Ni, and the like. As described later, when joining two substrates through the solder layer in the process, the material constituting the solder is diffused toward the later-described reflective electrode 47 side, thereby preventing deterioration of the light-emitting efficiency due to decrease in reflectance Function.

The reflective electrode 47 is made of, for example, an Ag-based metal, Al, Rh, or the like. The semiconductor light emitting element 1a assumes that the light emitted from the light emitting layer 17 is taken out in the upward direction in FIG. 6 (on the side of the n-type nitride semiconductor layer 16) And the function of increasing the luminous efficiency by reflecting the light radiated downward from the light guide plate 17 upward.

A part of the conductive layer 44 is in contact with the semiconductor layer 20 and more specifically the p-type nitride semiconductor layer 19 and a voltage is applied between the supporting substrate 12 and the power supply terminal 42 A current path that flows to the power supply terminal 42 through the support substrate 12, the conductive layer 44, and the semiconductor layer 20 is formed.

The insulating layer 48 is made of, for example, SiO ₂ , SiN, Zr ₂ O ₃ , AlN, Al ₂ O _3, or the like. The upper surface of the insulating layer 48 is in contact with the bottom surface of the p-type nitride semiconductor layer 19. [ The insulating layer 48 also functions as an etching stopper layer at the time of element isolation as described later and also has a function of expanding a current in a direction parallel to the substrate surface of the supporting substrate 12 .

The feed terminal 42 is formed on the top surface of the n-type nitride semiconductor layer 16 and is made of, for example, Cr-Au. A wire made of, for example, Au, Cu or the like is connected (not shown) to the feed terminal 42, and the other wire is connected to a feeding pattern of the substrate on which the semiconductor light- And the like (not shown).

Next, a manufacturing method of the semiconductor light emitting element 1a shown in Fig. 6 will be described with reference to the process sectional views of Figs. 7A to 7G.

(Step S11)

The semiconductor layer 20 is formed on the sapphire substrate 11 as shown in Fig. More specifically, as follows.

First, the undoped layer 13 is formed on the sapphire substrate 11 in the same manner as in step S1 of the first embodiment. Thereafter, by the same method as in the step S5 of the first embodiment in which the Al _x Ga _y Si _{1 -x- y} N layer 26 is formed, an n-type Al _x Ga _y Si _{1 -x- y} N layer To form the nitride semiconductor layer 16.

More specifically, the furnace pressure in the MOCVD apparatus is set to 30 kPa while the furnace temperature is set to 1150 캜. Then, TMG having a flow rate of 94 占 퐉 ol / min, trimethylaluminum (TMA) having a flow rate of 6 占 퐉 ol / min and a flow rate of 6 占 퐉 ol / min were introduced as a raw material gas while a nitrogen gas having a flow rate of 20 slm and a hydrogen gas having a flow rate of 15 slm were flowing as a carrier gas, Ammonia of 250000 占 퐉 ol / min and tetraethylsilane having a flow rate of 3.5 占 퐉 ol / min are supplied into the treatment furnace for 30 minutes. As a result, Al _{0 . 1} Ga _{0 .} An n-type nitride semiconductor layer 16 of ₈₉ Si _{0 .01} N is formed.

Thereafter, the light emitting layer 17 and the p-type nitride semiconductor layer 19 are formed in the same manner as in the first embodiment.

(Step S12)

The same activation processing as in step S2 of the first embodiment is performed.

(Step S13)

7B, an insulating layer 48 is formed at a predetermined position in the upper layer of the p-type nitride semiconductor layer 19. [ More specifically, it is preferable to form the insulating layer 48 at a position below the region where the power feed terminal 42 is to be formed in a later step. As the insulating layer 48, for example, SiO ₂ is formed to a thickness of about 200 nm. The material for film formation may be an insulating material, for example, SiN or Al ₂ O ₃ .

(Step S14)

The conductive layer 44 is formed so as to cover the upper surfaces of the p-type nitride semiconductor layer 19 and the insulating layer 48, as shown in Fig. 7C. Here, a multilayered conductive layer 44 including a reflective electrode 47, a protective layer 45, and a solder layer 43 is formed.

A more specific method of forming the conductive layer 44 is as follows, for example. First, in the sputtering apparatus, Ni having a film thickness of 0.7 nm and Ag having a film thickness of 120 nm are formed on the entire surface so as to cover the upper surfaces of the p-type nitride semiconductor layer 19 and the insulating layer 48 to form a reflective electrode 47 do. Next, contact annealing is performed at 400 DEG C for 2 minutes in a dry air atmosphere using an RTA apparatus.

Next, protective layer 45 is formed by depositing Ti having a film thickness of 100 nm and Pt having a film thickness of 200 nm on the upper surface (Ag surface) of the reflecting electrode 47 in the electron beam vapor deposition apparatus (EB apparatus). Subsequently, Ti having a thickness of 10 nm is deposited on the upper surface (Pt surface) of the protective layer 45, and then Au-Sn solder composed of Au 80% Sn 20% is deposited to a thickness of 3 탆 to form a solder layer 43 are formed.

7D, the solder layer 46 may be formed on the upper surface of the support substrate 12 prepared separately from the sapphire substrate 11 in the step of forming the solder layer 43 . The solder layer may be made of the same material as the solder layer 43. As the support substrate 12, for example, CuW is used as described above.

(Step S15)

Next, as shown in Fig. 7E, the sapphire substrate 11 and the supporting substrate 12 are attached. More specifically, the solder layer 43 and the support substrate 12 are bonded at a temperature of 280 占 폚 under a pressure of 0.2 MPa.

(Step S16)

Next, as shown in Fig. 7F, the sapphire substrate 11 is peeled off. More specifically, the sapphire substrate 11 and the semiconductor layer 20 are irradiated with a KrF excimer laser from the side of the sapphire substrate 11 with the sapphire substrate 11 facing upward and the supporting substrate 12 facing downward, The sapphire substrate is peeled off. In the case of sapphire, since the laser passes through and the underlying GaN (undoped layer) absorbs the laser, the interface is heated to decompose GaN. Thereby, the sapphire substrate 11 is peeled off.

Thereafter, the GaN (undoped layer) remaining on the wafer is removed by wet etching using hydrochloric acid or the like or dry etching using ICP to expose the n-type nitride semiconductor layer 16.

(Step S17)

Next, as shown in Fig. 7G, adjacent elements are separated from each other. Concretely, the semiconductor layer 20 is etched until the upper surface of the insulating layer 48 is exposed to the boundary region with the adjacent element by using the ICP apparatus. Thereby, the semiconductor layers 20 in the adjacent region are separated. At this time, the insulating layer 48 functions as an etching stopper layer.

In this etching step, it is preferable that the side surface of the element is not a vertical but an inclined surface having a taper angle of 10 DEG or more. By doing so, when the insulating layer is formed in a later step, the insulating layer is easily attached to the side surface of the semiconductor layer 20, and current leakage can be prevented.

After step S17, an uneven surface may be formed on the upper surface of the semiconductor layer 20 with an alkali solution such as KOH. As a result, the light extraction area can be increased, and the light extraction efficiency can be improved.

(Step S18)

Next, a feed terminal 42 is formed on the top surface of the n-type nitride semiconductor layer 16. More specifically, the power supply terminal 42 made of Ni with a thickness of 10 nm and Au with a thickness of 10 nm is formed. As described above, since the n-type nitride semiconductor layer 16 is formed of an Al _x Ga _y Si _{1 -x- y} N layer having a small specific resistance, after this step, the n-type nitride semiconductor layer 16 An ohmic connection is formed between the layer 16 and the feeder terminal 42. Thus, the semiconductor light emitting element 1a shown in Fig. 6 is formed.

Although not shown in the semiconductor light emitting element 1a shown in Fig. 6, as the subsequent step, the exposed element side surface and the element upper surface other than the power supply terminal 42 may be covered with an insulating layer. More specifically, an SiO ₂ film is formed in the EB device. An SiN film may also be formed. Then, the elements are separated by, for example, a laser dicing device, and the back surface of the supporting substrate 11 is bonded to the package by, for example, Ag paste to perform wire bonding to the power feeding terminal 42. [

(Third Embodiment)

A third embodiment of a semiconductor light emitting element will be described with reference to the drawings. 8 is a schematic cross-sectional view of the semiconductor light emitting device of the third embodiment. The semiconductor light emitting device 1b includes a support substrate 12, a conductive layer 44, an insulating layer 48, a semiconductor layer 20, a transparent electrode 24, and a power supply terminal 42. [ The semiconductor layer 20 is formed by stacking a p-type nitride semiconductor layer 19, a light emitting layer 17, and an n-type nitride semiconductor layer 15 in this order from below.

In the present embodiment, a transparent electrode 24 formed of an Al _x Ga _y Si _{1 -x- y} N layer is provided on the top surface of an n-type nitride semiconductor layer 15 having the same structure as the first embodiment, And a power supply terminal 42 is formed on the upper surface. By providing such a transparent electrode 24, high light transmittance and low specific resistance can be achieved. This makes it possible to extend the current path with respect to the direction horizontal to the substrate surface of the support substrate 12 without deteriorating the light extraction efficiency even if it is formed on the entire upper surface of the n-type nitride semiconductor layer 15, A current can flow in a wide region of the light emitting layer 17, and a wide light emitting region is realized.

As described above, since the Al _x Ga _y Si _{1 -x- y} N layer has a very small resistivity, good ohmic characteristics can be realized between the n-type nitride semiconductor layer 15 and the transparent electrode 24 have. Fig. 9 is a view for explaining the ohmic property between the n-type nitride semiconductor layer 15 and the transparent electrode 24. Fig.

9 (a) is a view showing a configuration of an evaluation element. An undoped layer 13 and an n-type nitride semiconductor layer 15 are formed on an upper layer of a sapphire substrate 11 to form an n-type nitride semiconductor layer 15, a transparent electrode 24 made of an Al _x Ga _y Si _{1 -x- y} N layer is formed. 9 (b) is a graph showing current voltage characteristics (IV characteristics) obtained by causing a current to flow in the two transparent electrodes 24 with respect to the evaluation element of Fig. 9 (a) .

Further, in Fig. 9 (b), Al _{0 . 06} Ga _{0 . 935} Si _{0 .005} N (Example 1) in which the transparent electrode 24 was formed, and Al ₀ .05 with an Si composition of 5% _{. 06} Ga _{0 . The} IV characteristic of the evaluation element (Example 2) in which the transparent electrode 24 was formed of ₈₉ Si _{0 .05} N was measured. 9 (b), it can be seen that both of the first and second embodiments exhibit a linear shape in the IV characteristic, and thus it is possible to realize good ohmic performance.

The n-type nitride semiconductor layer 16 having the same structure as that of the first embodiment is formed in place of the n-type nitride semiconductor layer 16 formed by the Al _x Ga _y Si _{1 -x- y} N layer And the transparent electrode 24 formed of an Al _x Ga _y Si _{1 -x- y} N layer on the _entire upper surface of the semiconductor light emitting element 1a and the semiconductor light emitting element 1a of the second embodiment, The description thereof will be omitted.

The manufacturing method is the same as that in the step S5 of the first embodiment after the same method as the steps S11 to S17 in the second embodiment described above. Then, the upper surface of the n-type nitride semiconductor layer 15 is covered with Al _X Ga _y Si _{1 -x- y} N layer is formed on the upper surface of the transparent electrode 24 and the feeder terminal 42 is formed on the upper surface of the transparent electrode 24 in the same manner as in step S 18 of the second embodiment. The following is common to the second embodiment.

[Solar cell]

A composition _{Al x Ga y B z M 1} -xy- z N (0 <x <1, 0 <y <1, 0≤z <1, 0.001≤1-xyz≤0.1 of the present invention, M is Si, Ge (Including at least any one of the above-described solar cells) will be described with reference to the drawings. In the following also, the layer composed of this composition is referred to as &quot; Al _x Ga _y Si _1-xy N layer &quot;.

10 is a cross-sectional view showing a schematic configuration of a solar battery cell. The solar cell 2 includes a glass substrate 71, a transparent electrode 29 formed of an Al _x Ga _y Si _{1 -x- y} N layer, a semiconductor layer 75, and a back electrode 76 . In this embodiment, a pin diode type including p-type amorphous silicon 72, i-type amorphous silicon 73, and n-type amorphous silicon 74 is employed as the semiconductor layer 75.

Conventional solar cells use ITO as a transparent electrode. As shown in Fig. 10, since the solar cell 2 having the transparent electrode 29 formed of the Al _x Ga _y Si _{1 -x- y} N layer can improve the transmission efficiency of visible light over ITO, The amount of light irradiating the semiconductor layer 75 with the visible light incident through the glass substrate 71 increases, and the power generation efficiency is improved.

10, the Al _x Ga _y Si _{1 -x- y} N layer is deposited on the glass substrate 71 by the sputtering method to form the transparent electrode 29 . Thereafter, the amorphous silicon is grown on the upper surface of the transparent electrode 29 to form the semiconductor layer 75. Then, the back electrode 76 formed of Al or the like is formed on the upper surface of the semiconductor layer 75, Pattern.

The structure of the solar cell 2 shown in Fig. 10 is merely an example. It is expected that the power generation efficiency is improved by using the transparent electrode made of the Al _x Ga _y Si _{1 -x- y} N layer of the present invention at the place where the ITO film was used as the conventional transparent conductive film even in any type of solar cell do.

1, 1a, 1b: semiconductor light emitting element 2: solar cell
5: gap 11: supporting substrate (sapphire substrate)
12: support substrate 13: undoped layer
15: an n-type nitride semiconductor layer
16: Al _x Ga _y B _z M _{1 -xy- z} N, the n-type nitride semiconductor layer
17: light emitting layer 19: p-type nitride semiconductor layer
20: semiconductor layer
21: transparent electrode formed of Al _x Ga _y B _z M _{1 -xy- z} N
23: transparent electrode formed of Al _x Ga _y B _z M _{1 -xy- z} N
24: transparent electrode formed of Al _x Ga _y B _z M _{1 -xy- z} N
25: power supply terminal 26: Al _x Ga _y B _z M _{1 -xy- z} N layer
27: Feed terminal
29: transparent electrode formed of Al _x Ga _y B _z M _{1 -xy- z} N
31: reflective electrode 33: reflective electrode
35: Resist 37: Bonding metal
39: Bonding metal 41: Substrate
42: feed terminal 43: solder layer
44: conductive layer 45: protective layer
46: solder layer 47: reflective electrode
48: insulating layer 71: glass substrate
72: p-type amorphous silicon 73: i-type amorphous silicon
74: n-type amorphous silicon 75: semiconductor layer
76: back electrode 90: conventional semiconductor light emitting element
91: contact electrode formed of ITO 93: contact electrode formed of ITO

Claims (8)

(1)
Al _x Ga _y B _z M _{1 -xy- z} N (Equation 1)
(Wherein 0 <x <1, 0 <y <1, 0≤z <1, 0.001≤1-xyz≤0.1, and M is at least one of Si and Ge) By weight based on the total weight of the composition. The method according to claim 1,
Wherein in the formula (1), 0.005? 1-xyz? 0.05.  A transparent electrode comprising the composition for a transparent conductive film according to claim 1 or 2.  A semiconductor light emitting device comprising the transparent electrode according to claim 3. A semiconductor light emitting device having a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer,
A transparent electrode formed on the p-type nitride semiconductor layer and including the composition for a transparent conductive film according to claim 2;
And a reflective electrode formed on an upper layer of the transparent electrode,
Wherein the light emitting layer is composed of a nitride semiconductor layer having a peak emission wavelength of 400 nm or less. A semiconductor light emitting device having a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer,
A transparent electrode formed on the entire upper surface of the n-type nitride semiconductor layer, the transparent electrode including the composition for a transparent conductive film according to claim 2;
And a power supply terminal formed on an upper layer of the transparent electrode,
Wherein the light emitting layer is composed of a nitride semiconductor layer having a peak emission wavelength of 400 nm or less. A semiconductor light emitting device having a light emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer,
Wherein the n-type nitride semiconductor layer comprises the composition for a transparent conductive film according to claim 2.  A solar cell comprising the transparent electrode according to claim 3.

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