PL426745A1 - Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes - Google Patents

Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes

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Publication number
PL426745A1
PL426745A1 PL426745A PL42674515A PL426745A1 PL 426745 A1 PL426745 A1 PL 426745A1 PL 426745 A PL426745 A PL 426745A PL 42674515 A PL42674515 A PL 42674515A PL 426745 A1 PL426745 A1 PL 426745A1
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PL
Poland
Prior art keywords
minutes
electrodes
encapsulant
base
application
Prior art date
Application number
PL426745A
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Polish (pl)
Other versions
PL232741B1 (en
Inventor
Edyta Stanek
Dawid CYCOŃ
Original Assignee
Ml System Spółka Akcyjna
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Publication date
Application filed by Ml System Spółka Akcyjna filed Critical Ml System Spółka Akcyjna
Priority to PL426745A priority Critical patent/PL232741B1/en
Publication of PL426745A1 publication Critical patent/PL426745A1/en
Publication of PL232741B1 publication Critical patent/PL232741B1/en

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  • Photovoltaic Devices (AREA)

Abstract

Przedmiotem wynalazku jest sposób nanoszenia enkapsulatu na podłoże elektrod ogniw fotowoltaicznych III generacji (DSSC), którego istota polega na tym, że sporządzono uprzednio pastę drukarską składającą się z proszku z fryty szklanej o ziarnistości d50 = 0,4 - 0,5 µm, tlenków krzemu (IV), cyny (IV) i bizmutu (III) o stosunku wagowym SiO2 : SnO2 : Bi2O3 = (4,0:4,5) : (0,8:1,0) : (13,0:13,5) oraz z lepiszcza organicznego złożonego z ?-terpineolu i etylocelulozy, przy czym stosunek wagowy tej fryty szklanej do ?-terpineolu i etylocelulozy wynosi jak (4,0:5,0):(3,0:4,0):(0,8:1,0) nanosi się na szklane podłoża TCO techniką sitodruku oddzielnie na każdą elektrodę tego ogniwa używając do tego celu sita z siatką P W posiadającą liczbę mesh = 63 oraz gumy raklowej o twardości w skali "Shore'a" wynoszącej 75-90-75 Sha, po czym tak zadrukowane podłoża TCO obu elektrod warstwą tej pasty umieszcza się w piecu komorowym i poddaje procesowi suszenia w temperaturze 140 - 160°C w czasie od 10 do 20 minut, a następnie w tym samym cyklu poddaje się je procesowi spiekania w temperaturze 470 - 490°C w czasie 40 - 50 minut, po czym tak dopasowane do siebie obie elektrody poddano procesowi enkapsulacji metodą fusingu w komorowym piecu w temp 630 - 650°C i w czasie 40 - 50 minut, a następnie poddano je procesowi wolnego ochładzania.The subject of the invention is a method of applying the encapsulate to the substrate of 3rd generation solar cell electrodes (DSSC), the essence of which is that a printing paste consisting of glass frit powder with a granularity d50 = 0.4 - 0.5 µm, silicon oxides has been prepared in advance. (IV), tin (IV) and bismuth (III) with SiO2: SnO2: Bi2O3 weight ratio = (4.0: 4.5): (0.8: 1.0): (13.0: 13.5 ) and an organic binder composed of β-terpineol and ethyl cellulose, where the weight ratio of this glass frit to β-terpineol and ethyl cellulose is (4.0: 5.0) :( 3.0: 4.0) :( 0 , 8: 1.0) is applied to glass TCO substrates by screen printing separately for each electrode of this cell using a sieve with a PW mesh having a mesh number = 63 and a squeegee rubber with a Shore hardness of 75-90 -75 Sha, after which the TCO substrates of both electrodes so printed are placed in a chamber furnace and dried at a temperature of 140 - 160 ° C for 10 to 20 minutes, and then in the same cycle they are sintered at 470 - 490 ° C for 40 - 50 minutes, after which both electrodes matched to each other were encapsulated by the method fusing in a chamber oven at 630 - 650 ° C and for 40 - 50 minutes, and then they were subjected to a slow cooling process.

PL426745A 2015-02-27 2015-02-27 Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes PL232741B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL426745A PL232741B1 (en) 2015-02-27 2015-02-27 Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL426745A PL232741B1 (en) 2015-02-27 2015-02-27 Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes

Publications (2)

Publication Number Publication Date
PL426745A1 true PL426745A1 (en) 2018-09-24
PL232741B1 PL232741B1 (en) 2019-07-31

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PL426745A PL232741B1 (en) 2015-02-27 2015-02-27 Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes

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PL232741B1 (en) 2019-07-31

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