PL426745A1 - Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes - Google Patents
Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodesInfo
- Publication number
- PL426745A1 PL426745A1 PL426745A PL42674515A PL426745A1 PL 426745 A1 PL426745 A1 PL 426745A1 PL 426745 A PL426745 A PL 426745A PL 42674515 A PL42674515 A PL 42674515A PL 426745 A1 PL426745 A1 PL 426745A1
- Authority
- PL
- Poland
- Prior art keywords
- minutes
- electrodes
- encapsulant
- base
- application
- Prior art date
Links
Landscapes
- Inks, Pencil-Leads, Or Crayons (AREA)
- Photovoltaic Devices (AREA)
Abstract
Przedmiotem wynalazku jest sposób nanoszenia enkapsulatu na podłoże elektrod ogniw fotowoltaicznych III generacji (DSSC), którego istota polega na tym, że sporządzono uprzednio pastę drukarską składającą się z proszku z fryty szklanej o ziarnistości d50 = 0,4 - 0,5 µm, tlenków krzemu (IV), cyny (IV) i bizmutu (III) o stosunku wagowym SiO2 : SnO2 : Bi2O3 = (4,0:4,5) : (0,8:1,0) : (13,0:13,5) oraz z lepiszcza organicznego złożonego z ?-terpineolu i etylocelulozy, przy czym stosunek wagowy tej fryty szklanej do ?-terpineolu i etylocelulozy wynosi jak (4,0:5,0):(3,0:4,0):(0,8:1,0) nanosi się na szklane podłoża TCO techniką sitodruku oddzielnie na każdą elektrodę tego ogniwa używając do tego celu sita z siatką P W posiadającą liczbę mesh = 63 oraz gumy raklowej o twardości w skali "Shore'a" wynoszącej 75-90-75 Sha, po czym tak zadrukowane podłoża TCO obu elektrod warstwą tej pasty umieszcza się w piecu komorowym i poddaje procesowi suszenia w temperaturze 140 - 160°C w czasie od 10 do 20 minut, a następnie w tym samym cyklu poddaje się je procesowi spiekania w temperaturze 470 - 490°C w czasie 40 - 50 minut, po czym tak dopasowane do siebie obie elektrody poddano procesowi enkapsulacji metodą fusingu w komorowym piecu w temp 630 - 650°C i w czasie 40 - 50 minut, a następnie poddano je procesowi wolnego ochładzania.The subject of the invention is a method of applying the encapsulate to the substrate of 3rd generation solar cell electrodes (DSSC), the essence of which is that a printing paste consisting of glass frit powder with a granularity d50 = 0.4 - 0.5 µm, silicon oxides has been prepared in advance. (IV), tin (IV) and bismuth (III) with SiO2: SnO2: Bi2O3 weight ratio = (4.0: 4.5): (0.8: 1.0): (13.0: 13.5 ) and an organic binder composed of β-terpineol and ethyl cellulose, where the weight ratio of this glass frit to β-terpineol and ethyl cellulose is (4.0: 5.0) :( 3.0: 4.0) :( 0 , 8: 1.0) is applied to glass TCO substrates by screen printing separately for each electrode of this cell using a sieve with a PW mesh having a mesh number = 63 and a squeegee rubber with a Shore hardness of 75-90 -75 Sha, after which the TCO substrates of both electrodes so printed are placed in a chamber furnace and dried at a temperature of 140 - 160 ° C for 10 to 20 minutes, and then in the same cycle they are sintered at 470 - 490 ° C for 40 - 50 minutes, after which both electrodes matched to each other were encapsulated by the method fusing in a chamber oven at 630 - 650 ° C and for 40 - 50 minutes, and then they were subjected to a slow cooling process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL426745A PL232741B1 (en) | 2015-02-27 | 2015-02-27 | Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL426745A PL232741B1 (en) | 2015-02-27 | 2015-02-27 | Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
PL426745A1 true PL426745A1 (en) | 2018-09-24 |
PL232741B1 PL232741B1 (en) | 2019-07-31 |
Family
ID=63578833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL426745A PL232741B1 (en) | 2015-02-27 | 2015-02-27 | Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes |
Country Status (1)
Country | Link |
---|---|
PL (1) | PL232741B1 (en) |
-
2015
- 2015-02-27 PL PL426745A patent/PL232741B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
PL232741B1 (en) | 2019-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2012527780A5 (en) | ||
EP2615613A3 (en) | A solar cell back side electrode | |
CN103594533A (en) | Back-contact back-junction solar battery three-dimension electrode and manufacturing method thereof | |
TW200641960A (en) | Black conductive thick film compositions, black electrodes, and methods of forming thereof | |
EP2677523A3 (en) | Method of manufacturing thick-film electrode | |
WO2009157727A3 (en) | Conductive paste composition and method of preparing electrode using the same | |
TW200729528A (en) | Aluminum paste composition and solar cell element employing the same | |
WO2011046365A3 (en) | Silver paste composition and solar cell using same | |
JP2012502434A5 (en) | ||
KR20110069593A (en) | Paste for forming electrode of solar cell and solar cell with the same | |
CN101973710A (en) | Low-melting point lead-free glass powder for electrode slurry of silicon solar battery and preparation method thereof | |
JP2012527781A5 (en) | ||
PL426745A1 (en) | Method for application of the active layers of encapsulant on the base of the III generation photovoltaic cell electrodes | |
MY189426A (en) | Paste composition used for forming solar cell electrode, solar cell electrode, and solar cell | |
RU2013134467A (en) | METHOD FOR PRODUCING SUN ELEMENT AND SUN ELEMENT | |
CN106448974A (en) | Pressure-sensitive resistor capable of preventing aluminum electrode layer from hydrothermal ageing and invalidation and preparation method of pressure-sensitive resistor | |
PL411268A1 (en) | Encapsulant of active layers in the 3rd generation photovoltaic cells and method for applying it on those cells electrode bases and tight sealing of connections between the electrodes | |
CN104058595B (en) | A kind of lead-free glass powder of silver paste of solar cells | |
TW200713334A (en) | Aluminum paste composition and solar cell employing the same | |
CN103121797B (en) | Glass powder with low melting point and preparation method thereof | |
JP5910509B2 (en) | Conductive paste and solar cell element using the conductive paste | |
CN103258867A (en) | Front electrode of silicon solar cell and preparation method thereof | |
JP2017139351A (en) | Manufacturing method of solar cell element, and solar cell element | |
CN102709394B (en) | Process for preparing cathode grid line of solar cell | |
CN101354969A (en) | Encapsulation technology for large area dye sensitization solar battery |