PL424542A1 - Polypropylene composition for laser marking - Google Patents

Polypropylene composition for laser marking

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Publication number
PL424542A1
PL424542A1 PL424542A PL42454218A PL424542A1 PL 424542 A1 PL424542 A1 PL 424542A1 PL 424542 A PL424542 A PL 424542A PL 42454218 A PL42454218 A PL 42454218A PL 424542 A1 PL424542 A1 PL 424542A1
Authority
PL
Poland
Prior art keywords
mass
oxide
laser marking
polypropylene composition
microsilica
Prior art date
Application number
PL424542A
Other languages
Polish (pl)
Inventor
Artur Kościuszko
Łukasz Wajer
Piotr CZYŻEWSKI
Dariusz SYKUTERA
Original Assignee
Ml Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ml Spółka Z Ograniczoną Odpowiedzialnością filed Critical Ml Spółka Z Ograniczoną Odpowiedzialnością
Priority to PL424542A priority Critical patent/PL424542A1/en
Publication of PL424542A1 publication Critical patent/PL424542A1/en

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Abstract

Przedmiotem zgłoszenia jest kompozycja polipropylenowa do znakowania laserowego charakteryzująca się tym, że zawiera od 70 do 95% mas. izotaktycznego polipropylenu jako osnowy oraz od 5 do 35% mas. mikrokrzemionki jako napełniacza, przy czym mikrokrzemionka ma postać pyłu o średniej wielkości ziaren poniżej 50 mikrometrów i zawiera od 92,5% do 94,5% mas. tlenku krzemu (IV) (SiO2), od 1% do 3% mas. węgla (C), od 0,5% do 2% mas. tlenku żelaza (III) (Fe2O3), od 0,8% do 1,2% mas. tlenku magnezu (MgO), od 0,65% do 0,75% mas. tlenku sodu (Na2O), od 0,55% do 0,65% mas. tlenku potasu (K2O).The subject of the application is a polypropylene laser marking composition characterized in that it contains from 70 to 95% by mass. isotactic polypropylene as matrix and from 5 to 35% by mass microsilica as a filler, the microsilica being in the form of dust with an average grain size less than 50 micrometers and containing from 92.5% to 94.5% by weight. silicon (IV) oxide (SiO2), from 1% to 3% by mass carbon (C), from 0.5% to 2% by mass iron (III) oxide (Fe2O3), from 0.8% to 1.2% by mass magnesium oxide (MgO), from 0.65% to 0.75% by mass sodium oxide (Na2O), from 0.55% to 0.65% by mass potassium oxide (K2O).

PL424542A 2018-02-08 2018-02-08 Polypropylene composition for laser marking PL424542A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL424542A PL424542A1 (en) 2018-02-08 2018-02-08 Polypropylene composition for laser marking

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL424542A PL424542A1 (en) 2018-02-08 2018-02-08 Polypropylene composition for laser marking

Publications (1)

Publication Number Publication Date
PL424542A1 true PL424542A1 (en) 2019-08-12

Family

ID=67549909

Family Applications (1)

Application Number Title Priority Date Filing Date
PL424542A PL424542A1 (en) 2018-02-08 2018-02-08 Polypropylene composition for laser marking

Country Status (1)

Country Link
PL (1) PL424542A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0607597A2 (en) * 1993-01-19 1994-07-27 Nippon Kayaku Kabushiki Kaisha Marking composition, molding thereof and marking method
KR20020048887A (en) * 2000-12-18 2002-06-24 플레믹 크리스티안 Laser-markable plastics and their preparation and use
US20150344712A1 (en) * 2014-05-27 2015-12-03 Paul W. Harrison High contrast surface marking using nanoparticle materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0607597A2 (en) * 1993-01-19 1994-07-27 Nippon Kayaku Kabushiki Kaisha Marking composition, molding thereof and marking method
KR20020048887A (en) * 2000-12-18 2002-06-24 플레믹 크리스티안 Laser-markable plastics and their preparation and use
US20150344712A1 (en) * 2014-05-27 2015-12-03 Paul W. Harrison High contrast surface marking using nanoparticle materials

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