PL398481A1 - Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych - Google Patents

Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Info

Publication number
PL398481A1
PL398481A1 PL398481A PL39848112A PL398481A1 PL 398481 A1 PL398481 A1 PL 398481A1 PL 398481 A PL398481 A PL 398481A PL 39848112 A PL39848112 A PL 39848112A PL 398481 A1 PL398481 A1 PL 398481A1
Authority
PL
Poland
Prior art keywords
eutectic
temperature
thin film
preparing thin
composites
Prior art date
Application number
PL398481A
Other languages
English (en)
Other versions
PL224060B1 (pl
Inventor
Andrzej Klos
Wojciech Łobodziński
Dorota Pawlak
Andrzej Stefański
Paweł Osewski
Original Assignee
Instytut Technologii Materialów Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Technologii Materialów Elektronicznych filed Critical Instytut Technologii Materialów Elektronicznych
Priority to PL398481A priority Critical patent/PL224060B1/pl
Priority to PL13158849T priority patent/PL2639343T3/pl
Priority to EP13158849.3A priority patent/EP2639343B1/en
Publication of PL398481A1 publication Critical patent/PL398481A1/pl
Publication of PL224060B1 publication Critical patent/PL224060B1/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Przedmiotem wynalazku jest sposób wytwarzania cienkowarstwowych kompozytów eutektycznych mających zastosowanie zwłaszcza w fotonice, fotoelektrochemii i fotowoltaice. Sposób wytwarzania polega na tym, że materiał (7) o składzie eutektycznym umieszcza się na płytce podłożowej (8) w urządzeniu do kierunkowej krystalizacji i topi się w temperaturze co najmniej równej temperaturze eutektycznej, a następnie w objętości stopionego materiału (7) obniża się temperaturę poniżej temperatury eutektycznej, przy czym gradient temperatury pomiędzy dolną i górną powierzchnią warstwy materiału (7) podczas procesu krystalizacji jest prostopadły do powierzchni płytki podłożowej (8).
PL398481A 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych PL224060B1 (pl)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych
PL13158849T PL2639343T3 (pl) 2012-03-16 2013-03-12 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych
EP13158849.3A EP2639343B1 (en) 2012-03-16 2013-03-12 A method of manufacturing thin layers of eutectic composites

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Publications (2)

Publication Number Publication Date
PL398481A1 true PL398481A1 (pl) 2013-09-30
PL224060B1 PL224060B1 (pl) 2016-11-30

Family

ID=47877885

Family Applications (2)

Application Number Title Priority Date Filing Date
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych
PL13158849T PL2639343T3 (pl) 2012-03-16 2013-03-12 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL13158849T PL2639343T3 (pl) 2012-03-16 2013-03-12 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Country Status (2)

Country Link
EP (1) EP2639343B1 (pl)
PL (2) PL224060B1 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL227901B1 (pl) * 2013-06-27 2018-01-31 Instytut Technologii Materialów Elektronicznych Materiał eutektyczny, zwłaszcza metalodielektryczny
PL443229A1 (pl) * 2022-12-21 2024-06-24 Uniwersytet Warszawski Plazmoniczny materiał eutektyczny domieszkowany jonami ziem rzadkich o wzmocnionej konwersji w górę oraz sposób jego otrzymywania
EP4556143A1 (en) * 2023-09-15 2025-05-21 Ensemble3 spolka z ograniczona odpowiedzialnoscia Method of obtaining eutectic material in the form of microspheres and the material obtained by this method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498926A (en) * 1981-03-20 1985-02-12 General Electric Company Method for producing eutectics as thin films using a laser device as a heat source

Also Published As

Publication number Publication date
PL2639343T3 (pl) 2015-08-31
EP2639343A1 (en) 2013-09-18
EP2639343B1 (en) 2015-01-14
PL224060B1 (pl) 2016-11-30

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