PL2639343T3 - Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych - Google Patents

Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Info

Publication number
PL2639343T3
PL2639343T3 PL13158849T PL13158849T PL2639343T3 PL 2639343 T3 PL2639343 T3 PL 2639343T3 PL 13158849 T PL13158849 T PL 13158849T PL 13158849 T PL13158849 T PL 13158849T PL 2639343 T3 PL2639343 T3 PL 2639343T3
Authority
PL
Poland
Prior art keywords
thin layers
manufacturing thin
eutectic composites
eutectic
composites
Prior art date
Application number
PL13158849T
Other languages
English (en)
Inventor
Andrzej Kłos
Wojciech Łobodziński
Dorota Anna Pawlak
Andrzej Stefański
Paweł Osewski
Original Assignee
Instytut Tech Materialow Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Tech Materialow Elektronicznych filed Critical Instytut Tech Materialow Elektronicznych
Publication of PL2639343T3 publication Critical patent/PL2639343T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/005—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
PL13158849T 2012-03-16 2013-03-12 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych PL2639343T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych
EP13158849.3A EP2639343B1 (en) 2012-03-16 2013-03-12 A method of manufacturing thin layers of eutectic composites

Publications (1)

Publication Number Publication Date
PL2639343T3 true PL2639343T3 (pl) 2015-08-31

Family

ID=47877885

Family Applications (2)

Application Number Title Priority Date Filing Date
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych
PL13158849T PL2639343T3 (pl) 2012-03-16 2013-03-12 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PL398481A PL224060B1 (pl) 2012-03-16 2012-03-16 Sposób wytwarzania cienkowarstwowych kompozytów eutektycznych

Country Status (2)

Country Link
EP (1) EP2639343B1 (pl)
PL (2) PL224060B1 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL227901B1 (pl) * 2013-06-27 2018-01-31 Instytut Technologii Materialów Elektronicznych Materiał eutektyczny, zwłaszcza metalodielektryczny
PL443229A1 (pl) * 2022-12-21 2024-06-24 Uniwersytet Warszawski Plazmoniczny materiał eutektyczny domieszkowany jonami ziem rzadkich o wzmocnionej konwersji w górę oraz sposób jego otrzymywania

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498926A (en) * 1981-03-20 1985-02-12 General Electric Company Method for producing eutectics as thin films using a laser device as a heat source

Also Published As

Publication number Publication date
EP2639343A1 (en) 2013-09-18
PL398481A1 (pl) 2013-09-30
PL224060B1 (pl) 2016-11-30
EP2639343B1 (en) 2015-01-14

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