PL3971998T3 - Sposób przetwarzania pasywacyjnej warstewki krzemu z domieszkowaniem typu n dla ogniwa słonecznego - Google Patents
Sposób przetwarzania pasywacyjnej warstewki krzemu z domieszkowaniem typu n dla ogniwa słonecznegoInfo
- Publication number
- PL3971998T3 PL3971998T3 PL20907093.7T PL20907093T PL3971998T3 PL 3971998 T3 PL3971998 T3 PL 3971998T3 PL 20907093 T PL20907093 T PL 20907093T PL 3971998 T3 PL3971998 T3 PL 3971998T3
- Authority
- PL
- Poland
- Prior art keywords
- processing
- solar cell
- passivation film
- type doped
- doped silicon
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
- H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911380721.9A CN111354838B (zh) | 2019-12-27 | 2019-12-27 | 太阳能电池及其制备方法、n型掺杂硅膜的处理方法 |
| PCT/CN2020/104771 WO2021128831A1 (zh) | 2019-12-27 | 2020-07-27 | 太阳能电池及其制备方法、n型掺杂硅膜的处理方法以及半导体器件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL3971998T3 true PL3971998T3 (pl) | 2025-04-22 |
Family
ID=71197104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL20907093.7T PL3971998T3 (pl) | 2019-12-27 | 2020-07-27 | Sposób przetwarzania pasywacyjnej warstewki krzemu z domieszkowaniem typu n dla ogniwa słonecznego |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12610649B2 (pl) |
| EP (1) | EP3971998B1 (pl) |
| CN (1) | CN111354838B (pl) |
| ES (1) | ES3020335T3 (pl) |
| PL (1) | PL3971998T3 (pl) |
| TW (1) | TW202125845A (pl) |
| WO (1) | WO2021128831A1 (pl) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354838B (zh) * | 2019-12-27 | 2022-07-15 | 晶澳（扬州）太阳能科技有限公司 | 太阳能电池及其制备方法、n型掺杂硅膜的处理方法 |
| CN112599618A (zh) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
| CN115692544B (zh) * | 2021-07-28 | 2025-09-23 | 环晟光伏(江苏)有限公司 | 一种Topcon电池钝化结构的制备方法 |
| CN116190498B (zh) * | 2021-11-26 | 2024-04-16 | 通威太阳能(眉山)有限公司 | 制备隧穿氧化层和非晶硅薄膜的方法及TOPCon电池 |
| CN115064606B (zh) * | 2022-06-16 | 2024-09-03 | 湖南红太阳光电科技有限公司 | 一种用于提高多晶硅层钝化效果的水汽退火工艺 |
| CN115411150B (zh) * | 2022-09-29 | 2024-07-09 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法 |
| CN115642201B (zh) * | 2022-10-11 | 2026-03-03 | 三一硅能(株洲)有限公司 | 一种基于光伏电池的变温扩散工艺 |
| CN118431309B (zh) | 2024-07-05 | 2024-10-18 | 天合光能股份有限公司 | 硅基异质结太阳能电池及其制备方法 |
| WO2026056252A1 (zh) * | 2024-09-13 | 2026-03-19 | 西安隆基乐叶光伏科技有限公司 | 太阳能电池及光伏组件 |
| CN119907334A (zh) * | 2025-01-10 | 2025-04-29 | 晶科能源(上饶)有限公司 | TOPCon电池的制备方法和TOPCon电池 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3545470B2 (ja) * | 1994-12-01 | 2004-07-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP2953396B2 (ja) * | 1996-09-06 | 1999-09-27 | 日本電気株式会社 | シリコン薄膜電導素子の製造方法 |
| JP2002231627A (ja) | 2001-01-30 | 2002-08-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
| FR2929755B1 (fr) * | 2008-04-03 | 2011-04-22 | Commissariat Energie Atomique | Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers |
| US20130048070A1 (en) * | 2011-08-26 | 2013-02-28 | Arash Hazeghi | Tunnel photovoltaic |
| CN108701736A (zh) | 2016-02-22 | 2018-10-23 | 松下知识产权经营株式会社 | 太阳能单电池和太阳能单电池的制造方法 |
| JP6257847B1 (ja) | 2016-03-23 | 2018-01-10 | 三菱電機株式会社 | 太陽電池の製造方法 |
| US11257974B2 (en) | 2016-12-12 | 2022-02-22 | Ecole polytechnique fédérale de Lausanne (EPFL) | Silicon heterojunction solar cells and methods of manufacture |
| CN109216499A (zh) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | 基于单晶perc正面发射结隧穿氧化钝化电池制备方法 |
| CN109216498A (zh) | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | 一种双面隧穿氧化钝化高效n型双面电池的制备方法 |
| CN108336184A (zh) | 2018-02-09 | 2018-07-27 | 中国科学院宁波材料技术与工程研究所 | 一种隧穿氧钝化接触晶体硅太阳电池的制备方法 |
| CN109273557B (zh) * | 2018-08-10 | 2021-01-12 | 晶澳（扬州）太阳能科技有限公司 | 一种太阳能电池用硅片的处理方法 |
| CN109148647A (zh) * | 2018-09-07 | 2019-01-04 | 江苏顺风光电科技有限公司 | 一种TOPCon结构电池的制备方法 |
| CN109585578A (zh) * | 2019-01-15 | 2019-04-05 | 晶澳（扬州）太阳能科技有限公司 | 一种背结太阳能电池及其制备方法 |
| CN110571309B (zh) * | 2019-03-20 | 2021-03-16 | 常州大学 | 一种去除Poly绕镀清洗方法 |
| CN109962126B (zh) * | 2019-04-29 | 2023-12-05 | 浙江晶科能源有限公司 | N型钝化接触电池的制作系统及方法 |
| CN209515717U (zh) | 2019-04-29 | 2019-10-18 | 浙江晶科能源有限公司 | N型钝化接触电池的制作系统 |
| CN110197855B (zh) | 2019-05-29 | 2021-06-15 | 西安理工大学 | 用于Topcon电池制作的poly-Si绕镀的去除方法 |
| CN111354838B (zh) * | 2019-12-27 | 2022-07-15 | 晶澳（扬州）太阳能科技有限公司 | 太阳能电池及其制备方法、n型掺杂硅膜的处理方法 |
-
2019
- 2019-12-27 CN CN201911380721.9A patent/CN111354838B/zh active Active
-
2020
- 2020-07-27 WO PCT/CN2020/104771 patent/WO2021128831A1/zh not_active Ceased
- 2020-07-27 EP EP20907093.7A patent/EP3971998B1/en active Active
- 2020-07-27 PL PL20907093.7T patent/PL3971998T3/pl unknown
- 2020-07-27 ES ES20907093T patent/ES3020335T3/es active Active
- 2020-07-27 US US17/618,821 patent/US12610649B2/en active Active
- 2020-09-10 TW TW109131148A patent/TW202125845A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US12610649B2 (en) | 2026-04-21 |
| US20220238748A1 (en) | 2022-07-28 |
| EP3971998A4 (en) | 2022-08-10 |
| WO2021128831A1 (zh) | 2021-07-01 |
| CN111354838A (zh) | 2020-06-30 |
| TW202125845A (zh) | 2021-07-01 |
| EP3971998B1 (en) | 2025-02-26 |
| CN111354838B (zh) | 2022-07-15 |
| ES3020335T3 (en) | 2025-05-22 |
| EP3971998C0 (en) | 2025-02-26 |
| EP3971998A1 (en) | 2022-03-23 |
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