PL3640991T3 - Sposób wytwarzania wyświetlacza OLED - Google Patents

Sposób wytwarzania wyświetlacza OLED

Info

Publication number
PL3640991T3
PL3640991T3 PL17910922.8T PL17910922T PL3640991T3 PL 3640991 T3 PL3640991 T3 PL 3640991T3 PL 17910922 T PL17910922 T PL 17910922T PL 3640991 T3 PL3640991 T3 PL 3640991T3
Authority
PL
Poland
Prior art keywords
manufacturing
oled display
oled
display
Prior art date
Application number
PL17910922.8T
Other languages
English (en)
Inventor
Fangmei LIU
Xingyu Zhou
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
Publication of PL3640991T3 publication Critical patent/PL3640991T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)
  • Thin Film Transistor (AREA)
PL17910922.8T 2017-05-25 2017-07-13 Sposób wytwarzania wyświetlacza OLED PL3640991T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710389002.8A CN107221552A (zh) 2017-05-25 2017-05-25 Toc型oled显示器的制作方法及toc型oled显示器
PCT/CN2017/092874 WO2018214256A1 (zh) 2017-05-25 2017-07-13 Toc型oled显示器的制作方法及toc型oled显示器

Publications (1)

Publication Number Publication Date
PL3640991T3 true PL3640991T3 (pl) 2022-10-10

Family

ID=59947018

Family Applications (1)

Application Number Title Priority Date Filing Date
PL17910922.8T PL3640991T3 (pl) 2017-05-25 2017-07-13 Sposób wytwarzania wyświetlacza OLED

Country Status (7)

Country Link
US (1) US10153335B1 (pl)
EP (1) EP3640991B1 (pl)
JP (1) JP7015321B2 (pl)
KR (1) KR20200012914A (pl)
CN (1) CN107221552A (pl)
PL (1) PL3640991T3 (pl)
WO (1) WO2018214256A1 (pl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107785405B (zh) * 2017-10-31 2020-04-17 京东方科技集团股份有限公司 阵列基板及其制备方法
CN108258086B (zh) * 2017-12-25 2020-05-12 五邑大学 一种ZnO微米/纳米柱LED的制备方法
CN109116605A (zh) * 2018-09-14 2019-01-01 惠科股份有限公司 一种显示面板及其制造方法
CN109616497A (zh) * 2018-11-30 2019-04-12 武汉华星光电技术有限公司 Oled显示面板
CN112909055B (zh) * 2021-01-26 2024-07-02 京东方科技集团股份有限公司 显示面板、显示装置和制造方法
CN114188388A (zh) * 2021-12-09 2022-03-15 深圳市华星光电半导体显示技术有限公司 显示面板、显示装置以及显示面板的制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725425B1 (ko) * 2000-07-19 2007-06-07 엘지.필립스 엘시디 주식회사 액정표시장치
KR100855884B1 (ko) * 2001-12-24 2008-09-03 엘지디스플레이 주식회사 액정표시장치용 얼라인 키
KR100659759B1 (ko) 2004-10-06 2006-12-19 삼성에스디아이 주식회사 바텀 게이트형 박막트랜지스터, 그를 구비하는평판표시장치 및 박막트랜지스터의 제조방법
TW200706060A (en) 2005-07-28 2007-02-01 Univision Technology Inc Color filter conversion apparatus and OLED apparatus thereof
KR101212626B1 (ko) 2010-03-05 2012-12-14 연세대학교 산학협력단 금속산화물 박막 및 그 제조 방법, 금속산화물 박막용 용액
JP2012013206A (ja) 2010-07-05 2012-01-19 Toyota Motor Corp ロックアップクラッチ付トルクコンバータ
KR101108176B1 (ko) 2010-07-07 2012-01-31 삼성모바일디스플레이주식회사 더블 게이트형 박막 트랜지스터 및 이를 구비한 유기 발광 표시 장치
JP2013012477A (ja) 2011-06-28 2013-01-17 Cbrite Inc ハイブリッドのフルカラー・アクティブ・マトリクス有機発光ディスプレイ
CN103107288B (zh) * 2011-11-10 2016-02-03 乐金显示有限公司 白光有机发光器件和使用白光有机发光器件的显示装置
JP2014038166A (ja) 2012-08-13 2014-02-27 Fujifilm Corp 着色硬化性組成物、カラーフィルタ、カラーフィルタの製造方法、及び表示装置
WO2014148830A1 (ko) * 2013-03-20 2014-09-25 Kim Hongdoo 산화아연 전구체의 제조방법, 이로부터 수득되는 산화아연 전구체 및 산화아연 박막
KR102342073B1 (ko) * 2014-11-28 2021-12-22 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판
CN205900543U (zh) * 2016-05-18 2017-01-18 武汉华星光电技术有限公司 一种oled显示面板
CN106409871A (zh) * 2016-08-31 2017-02-15 深圳市华星光电技术有限公司 一种显示面板

Also Published As

Publication number Publication date
EP3640991B1 (en) 2022-06-22
JP7015321B2 (ja) 2022-02-02
US10153335B1 (en) 2018-12-11
WO2018214256A1 (zh) 2018-11-29
KR20200012914A (ko) 2020-02-05
JP2020520538A (ja) 2020-07-09
EP3640991A1 (en) 2020-04-22
EP3640991A4 (en) 2020-06-03
CN107221552A (zh) 2017-09-29
US20180342567A1 (en) 2018-11-29

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