PL3590190T4 - Izolowane ogniwo przełączające moc - Google Patents

Izolowane ogniwo przełączające moc

Info

Publication number
PL3590190T4
PL3590190T4 PL18706757.4T PL18706757T PL3590190T4 PL 3590190 T4 PL3590190 T4 PL 3590190T4 PL 18706757 T PL18706757 T PL 18706757T PL 3590190 T4 PL3590190 T4 PL 3590190T4
Authority
PL
Poland
Prior art keywords
switching cell
power isolating
isolating switching
power
cell
Prior art date
Application number
PL18706757.4T
Other languages
English (en)
Other versions
PL3590190T3 (pl
Inventor
Olivier JARDEL
Raymond Quere
Stéphane PIOTROWICZ
Philippe Bouysse
Sylvain Delage
Audrey MARTIN
Original Assignee
Thales
Commissariat à l'énergie atomique et aux énergies alternatives
Université De Limoges
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales, Commissariat à l'énergie atomique et aux énergies alternatives, Université De Limoges filed Critical Thales
Publication of PL3590190T4 publication Critical patent/PL3590190T4/pl
Publication of PL3590190T3 publication Critical patent/PL3590190T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09407—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of the same canal type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Stand-By Power Supply Arrangements (AREA)
PL18706757.4T 2017-03-02 2018-02-27 Izolowane ogniwo przełączające moc PL3590190T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1700205A FR3063588B1 (fr) 2017-03-02 2017-03-02 Cellule de commutation de puissance isolee
PCT/EP2018/054826 WO2018158259A1 (fr) 2017-03-02 2018-02-27 Cellule de commutation de puissance isolee

Publications (2)

Publication Number Publication Date
PL3590190T4 true PL3590190T4 (pl) 2023-07-17
PL3590190T3 PL3590190T3 (pl) 2023-07-17

Family

ID=59923467

Family Applications (1)

Application Number Title Priority Date Filing Date
PL18706757.4T PL3590190T3 (pl) 2017-03-02 2018-02-27 Izolowane ogniwo przełączające moc

Country Status (7)

Country Link
US (1) US10965282B2 (pl)
EP (1) EP3590190B1 (pl)
ES (1) ES2935608T3 (pl)
FI (1) FI3590190T3 (pl)
FR (1) FR3063588B1 (pl)
PL (1) PL3590190T3 (pl)
WO (1) WO2018158259A1 (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021120537A1 (de) 2021-08-06 2023-02-09 Infineon Technologies Ag Systeme, vorrichtungen und verfahren zur versorgungsleistung-generierung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177418A (ja) * 1992-12-04 1994-06-24 Toshiba Corp ホトカプラ装置
US5360979A (en) * 1993-08-05 1994-11-01 At&T Bell Laboratories Fast turn-off circuit for solid-state relays or the like
GB9424666D0 (en) * 1994-12-07 1995-02-01 Philips Electronics Uk Ltd A protected switch
JP2007116049A (ja) * 2005-10-24 2007-05-10 Toshiba Corp 半導体装置
FR2968131A1 (fr) * 2010-11-29 2012-06-01 Centre Nat Rech Scient Cellule de commutation de puissance et equipement electronique correspondant
FR3020222A1 (fr) * 2014-04-22 2015-10-23 Thales Sa Cellule de communication de puissance a transistors a effet de champ de type normalement conducteur

Also Published As

Publication number Publication date
EP3590190A1 (fr) 2020-01-08
US20190386656A1 (en) 2019-12-19
EP3590190B1 (fr) 2022-09-21
US10965282B2 (en) 2021-03-30
WO2018158259A1 (fr) 2018-09-07
FR3063588B1 (fr) 2022-07-08
FR3063588A1 (fr) 2018-09-07
FI3590190T3 (en) 2023-01-13
ES2935608T3 (es) 2023-03-08
PL3590190T3 (pl) 2023-07-17

Similar Documents

Publication Publication Date Title
IL267616A (en) Immunologically engineered pluripotent cells
EP3437182A4 (en) POWER ARCHITECTURE FOR MICRONETS
IL273915A (en) cell
GB201813178D0 (en) Cell
GB201707783D0 (en) Cell
GB201707779D0 (en) Cell
GB201803079D0 (en) Cell
EP3398374A4 (en) QUICK CELL RESOLUTION
EP3345293A4 (en) PROTECTION AGAINST SHORT CIRCUITS FOR CUTTING CONVERTERS
GB201720949D0 (en) Cell
GB201718697D0 (en) Cell
EP3321223A4 (en) FORCE MEASURING CELL
PL3252846T3 (pl) Zespół ogniwa akumulatora
PL3246965T3 (pl) Zespół ogniw baterii
GB201807693D0 (en) Cell
PL3590190T3 (pl) Izolowane ogniwo przełączające moc
HK1258265A1 (zh) 配置為限制開關過電壓的電力轉換器
EP3723257A4 (en) SWITCHING POWER SUPPLY
GB201816399D0 (en) Cell
GB201805918D0 (en) Cell
GB201714718D0 (en) Cell
PL3444868T3 (pl) Ogniwo baterii
EP3272152A4 (en) Radio power mode switching
GB2551307B (en) Electrical switching assembly
GB2515912B (en) Switching power transformers